- Tytuł:
- Growth of β-$Ga_2O_3$ Nanorods and Photoluminescence Properties
- Autorzy:
-
Zhang,, S.
Zhuang, H.
Xue, C.
Li, B.
Shen, J.
Wang, D. - Powiązania:
- https://bibliotekanauki.pl/articles/1814023.pdf
- Data publikacji:
- 2007-12
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
68.65.-k
79.60.Jv
81.15.Cd - Opis:
- β-$Ga_2O_3$ nanorods were successfully fabricated through annealing $Ga_2O_3$/Mo films deposited on the Si (111) substrate by radio frequency magnetron sputtering technique. The morphology and structure of the as-synthesized nanorods were characterized by X-ray diffraction, scanning electron microscopy, high-resolution transmission electron microscopy, and energy dispersive X-rays spectroscopy. The results show that the formed nanorods are single-crystalline $Ga_2O_3$ with monoclinic structure. The diameters of nanorods are 200 nm and lengths typically up to several micrometers. A photoluminescence spectrum at room temperature under excitation at 325 nm exhibits two strong blue-light peaks located at about 413.0 nm and 437.5 nm, attributed to the recombination of bound electron-hole exciton in β-$Ga_2O_3$ single crystal. The growth process of the β-$Ga_2O_3$ nanorods is probably dominated by conventional vapor-solid mechanism.
- Źródło:
-
Acta Physica Polonica A; 2007, 112, 6; 1195-1201
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł