Autor: Lee, Y.-C. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Microstructure Evolution of Tungsten-Based ODS Alloys Reinforced with the γ(Ni, Fe) Phase by a Secondary Ball Milling Method
Autorzy:: Chen, C.
Zeng, Y.
Lee, J.
Powiązania:: https://bibliotekanauki.pl/articles/1375180.pdf
Data publikacji:: 2014-10
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 81.20.Ev
81.20.Wk
81.07.Bc
81.05.Ni
Opis:: In the current study, $W-5Ni-2Fe-Y_2O_3$ model alloys were produced using a high-energy planetary ball mill. The presence of the γ(Ni, Fe) phase is favored with respect to material properties in this alloy. Therefore, a secondary ball milling method was introduced to obtain a fine and uniformly distributed γ(Ni, Fe) phase. Phase development of mechanical alloyed powders was investigated by X-ray diffraction. The results show that the formation of the γ(Ni, Fe) phase was found after 18 h of a pre-milling procedure. A further secondary milling method produced a uniform microstructure with grain refinement. TEM results also show changes in the lattice parameters of the tungsten and γ(Ni, Fe) phase associated with the solid solubility limits in the alloy produced by secondary ball milling.
Źródło:: Acta Physica Polonica A; 2014, 126, 4; 907-911
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 2.

Tytuł:: Investigation of Localized Electric Field in the Type-II InAs/GaAsSb/GaAs Structure
Autorzy:: Lee, S.
Kim, J.
Yoon, S.
Kim, Y.
Honsberg, C.
Powiązania:: https://bibliotekanauki.pl/articles/1398577.pdf
Data publikacji:: 2016-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.66.Fd
78.40.-q
73.40.Lq
73.50.Pz
Opis:: The effect of localized electric field (F) was investigated in the type-II InAs/GaAsSb/GaAs structures. To compare type-I to type-II, two types of samples with different Sb contents was grown by molecular beam epitaxy, whose Sb contents are 3% (type-I) and 16% (type-II), respectively. In the both samples, we performed excitation power dependent-photoreflectance at 10 K and the result showed that the period of the Franz-Keldysh oscillation, revealed above the band gap $(E_{g})$ of GaAs, was broadened in the only type-II system, which means that F was also increased because it is proportional to the period of the Franz-Keldysh oscillation while the period of the Franz-Keldysh oscillations stayed unchanged in type-I system. This phenomenon is explained by that the F was affected by the band bending effect caused by the spatially separated photo-excited carriers in the interface between GaAsSb and GaAs. The F changed linearly as a function of square root of excitation power as expected for the F. Moreover, F was calculated using fast Fourier transform method for a qualitative analysis, which is in a good agreement with the theory of triangular well approximation.
Źródło:: Acta Physica Polonica A; 2016, 130, 5; 1213-1216
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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