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    Wyświetlanie 1-6 z 6
    Tytuł:
    Microstructure Evolution of Tungsten-Based ODS Alloys Reinforced with the γ(Ni, Fe) Phase by a Secondary Ball Milling Method
    Autorzy:
    Chen, C.
    Zeng, Y.
    Lee, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1375180.pdf
    Data publikacji:
    2014-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.20.Ev
    81.20.Wk
    81.07.Bc
    81.05.Ni
    Opis:
    In the current study, $W-5Ni-2Fe-Y_2O_3$ model alloys were produced using a high-energy planetary ball mill. The presence of the γ(Ni, Fe) phase is favored with respect to material properties in this alloy. Therefore, a secondary ball milling method was introduced to obtain a fine and uniformly distributed γ(Ni, Fe) phase. Phase development of mechanical alloyed powders was investigated by X-ray diffraction. The results show that the formation of the γ(Ni, Fe) phase was found after 18 h of a pre-milling procedure. A further secondary milling method produced a uniform microstructure with grain refinement. TEM results also show changes in the lattice parameters of the tungsten and γ(Ni, Fe) phase associated with the solid solubility limits in the alloy produced by secondary ball milling.
    Źródło:
    Acta Physica Polonica A; 2014, 126, 4; 907-911
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Structure, morphology, and band gap of Ti-V-O mixed oxides processed by coprecipitation and calcination
    Autorzy:
    Park, M.
    Lim, Y.
    Sung, Y.
    Kwak, D.
    Lee, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1061893.pdf
    Data publikacji:
    2016-04
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.05.Hd
    Opis:
    Mixed oxides of Ti-V-O were co-precipitated by wet process using TiCl₄ and VOCl₃ as starting materials. As-precipitated gels were calcinated at 800°C for 4 hours in oxygen atmosphere. Effects of vanadium content on the structural evolution, morphology, and band gap of Ti-V-O oxides were investigated. Calcination has produced mixtures of TiO₂/VO₂/V₂O₅ oxides and has allowed formation of Ti_{1-x}V_{x}O₂. Lattice parameters of rutile TiO₂ were precisely measured to investigate vanadium substitution into single rutile phase of Ti_{1-x}V_{x}O₂ with varying vanadium content. As vanadium addition was increased, particles were coarsening rapidly during calcination. Band gap of the Ti-V-O oxides was measured using ultraviolet visible light spectrometer. A decrease of band gap down to 1.7 eV with the addition of maximum of 10 at.% of vanadium was measured, which is due to the formation of single phase of Ti_{1-x}V_{x}O₂ as well as the formation of metallic VO₂ or V₂O₅ particles.
    Źródło:
    Acta Physica Polonica A; 2016, 129, 4; 875-877
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Electric and Magnetic Signatures of Structural and Chemical Ordering of Heusler Alloy Films
    Autorzy:
    Dubowik, J.
    Gościańska, I.
    Załęski, K.
    Kudryavtsev, Y.
    Lee, Y.
    Powiązania:
    https://bibliotekanauki.pl/articles/1810587.pdf
    Data publikacji:
    2009-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    72.80.Ng
    73.61.-r
    75.70.-i
    76.50.+g
    Opis:
    We present results of in situ temperature measurements of resistivity for some amorphous or partially crystalline Heusler alloy films: $Co_{2}CrAl$, $Co_{2}MnGa$ and off-stoichiometric $Ni_{2}Mn_{1+x}Sn_{x}$, $Ni_{2}Mn_{1-x}Ga_{x}$ that are known to exhibit half-metallic properties and martensitic transformations, respectively. From ρ vs. T characteristics we distinguish various stages of chemical and structural ordering in the films. They appear to be quite distinct in both systems investigated. The resistivity results are compared with magnetic characteristics for $Co_{2}MnGa$ with a high Curie temperature.
    Źródło:
    Acta Physica Polonica A; 2009, 115, 1; 360-362
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Positron Annilation Lifetime and Glass Transition Temperatures in $CO_2$ Sorption Polystyrene
    Autorzy:
    Jean, Y.
    Chen, H.
    Lee, L.
    Yang, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1812530.pdf
    Data publikacji:
    2008-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.70.Bj
    78.66.Qn
    71.60.+z
    Opis:
    Positron annihilation lifetime spectroscopy was used to measure the free-volume size and distributions as a function of temperature in polystyrene with and without 400 psi $CO_2$ sorption. The transition temperatures in the polystyrene with $CO_2$ sorption obtained from ortho-positronium lifetimes were found to depend on the thermal cycles and a meta-stable state showing a negative thermal expansion coefficient was observed between 53°C and 82°C during the first heating up experiment. The observed $T_g$ in polystyrene with, and without $CO_2$ sorption after annealing from ortho-positronium lifetimes were found to be 86°C and 91°C, which are 5°C higher, and 10°C lower than from the differential scanning calorimetry data, respectively. The observed free-volume variations are discussed in terms of hole expansion, creation, free-volume relaxation, plasticization, and hole filling in amorphous polymers.
    Źródło:
    Acta Physica Polonica A; 2008, 113, 5; 1385-1395
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Investigation of Localized Electric Field in the Type-II InAs/GaAsSb/GaAs Structure
    Autorzy:
    Lee, S.
    Kim, J.
    Yoon, S.
    Kim, Y.
    Honsberg, C.
    Powiązania:
    https://bibliotekanauki.pl/articles/1398577.pdf
    Data publikacji:
    2016-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.66.Fd
    78.40.-q
    73.40.Lq
    73.50.Pz
    Opis:
    The effect of localized electric field (F) was investigated in the type-II InAs/GaAsSb/GaAs structures. To compare type-I to type-II, two types of samples with different Sb contents was grown by molecular beam epitaxy, whose Sb contents are 3% (type-I) and 16% (type-II), respectively. In the both samples, we performed excitation power dependent-photoreflectance at 10 K and the result showed that the period of the Franz-Keldysh oscillation, revealed above the band gap $(E_{g})$ of GaAs, was broadened in the only type-II system, which means that F was also increased because it is proportional to the period of the Franz-Keldysh oscillation while the period of the Franz-Keldysh oscillations stayed unchanged in type-I system. This phenomenon is explained by that the F was affected by the band bending effect caused by the spatially separated photo-excited carriers in the interface between GaAsSb and GaAs. The F changed linearly as a function of square root of excitation power as expected for the F. Moreover, F was calculated using fast Fourier transform method for a qualitative analysis, which is in a good agreement with the theory of triangular well approximation.
    Źródło:
    Acta Physica Polonica A; 2016, 130, 5; 1213-1216
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Fabrication and Characterization of GaN/Polymer Composite p-n Junction with PEDOT Nanoparticle Interface Layer
    Autorzy:
    Kim, M.
    Jin, S.
    Choi, H.
    Kim, G.
    Yim, K.
    Kim, S.
    Nam, G.
    Yoon, H.
    Kim, Y.
    Lee, D.
    Kim, Jin
    Kim, Jong
    Leem, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1505152.pdf
    Data publikacji:
    2011-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.61.Ey
    81.15.Gh
    Opis:
    A heavily Si-doped GaN/polymer hybrid structure with p-type poly(3,4-ethylene-dioxythiophene):beta-1,3-glucan (PEDOT nanoparticle) interface layer has been fabricated. The Si-doped GaN thin film with carrier concentration of 1 × $10^{19} cm^{-3}$ was grown by metal-organic chemical vapor deposition. The PEDOT nanoparticle with various sizes ranging from 60 to 120 nm was synthesized via a miniemulsion polymerization process. The electrical conductivity of the PEDOT nanoparticle is less than 1.2 S/cm. The current-voltage (I-V) characteristic of the hybrid structure shows diode-like behavior. The I-V characteristic was examined in the framework of the thermionic emission model. The ideality factor of the structure without PEDOT nanoparticle interface layer is 12.9. However, the ideality factor of the hybrid structure with PEDOT nanoparticle interface layer is obtained as 1.9. The value of ideality factor is dramatically decreased by inserting the PEDOT nanoparticle interface layer.
    Źródło:
    Acta Physica Polonica A; 2011, 119, 6; 875-879
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-6 z 6

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