- Tytuł:
- Influence of TDMAAs Acceptor Precursor on Performance Improvement of HgCdTe Photodiodes
- Autorzy:
-
Madejczyk, P.
Gawron, W.
Piotrowski, A.
Kłos, K.
Rutkowski, J.
Rogalski, A. - Powiązania:
- https://bibliotekanauki.pl/articles/1506804.pdf
- Data publikacji:
- 2010-12
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
42.79.Pw
07.57.Kp
73.21.Cd
78.67.Pt
79.60.Jv - Opis:
- One of the key factor which determine HgCdTe photodiode quality is acceptor doping efficiency. This paper presents significant progress made over the past three years in development of acceptor doping technology in metalorganic chemical vapour deposition HgCdTe photovoltaic detectors. High acceptor doping is required for $P^{+}$-contact layers, whereas low doping is necessary for p-type absorbing base layer. Previously, $AsH_3$ precursor was used as an acceptor dopant. This precursor is partially incorporated as electrically neutral As-H pairs, which are likely to be recombination centres in HgCdTe and in consequence influence on the carriers lifetime lowering. Substituting of $AsH_3$ by TDMAAs resulted in higher carrier lifetimes and thereby about one order of magnitude higher $R_0A$ product of HgCdTe photodiodes in temperatures close to 230 K.
- Źródło:
-
Acta Physica Polonica A; 2010, 118, 6; 1199-1204
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł