- Tytuł:
- Capability of Semiconducting NiO Films in Gamma Radiation Dosimetry
- Autorzy:
-
Guziewicz, M.
Jung, W.
Grochowski, J.
Borysiewicz, M.
Golaszewska, K.
Kruszka, R.
Baranska, A.
Piotrowska, A.
Witkowski, B.
Domagala, J.
Gryzinski, M.
Tyminska, K.
Stonert, A. - Powiązania:
- https://bibliotekanauki.pl/articles/1492706.pdf
- Data publikacji:
- 2011-12
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
73.61.Jc
29.40.-n
87.53.Bn - Opis:
- Electrical properties of RF magnetron sputtered p-NiO films were characterized after fabrication and after gamma irradiations using $\text{}^{137}Cs$ and $\text{}^{60}Co$ sources. Electrical parameters are obtained from the Hall measurements, impedance spectroscopy and C-V measurement of n-Si/p-NiO junction diodes. The results show that resistivity of the NiO film is gradually increased following after sequential irradiation processes because of the decrease in holes' concentration. Hole concentration of a NiO film decreases from the original value of $4.36 \times 10^{16} cm^{-3}$ to $2.86 \times 10^{16} cm^{-3}$ after $\text{}^{137}Cs γ$ irradiation with doses of 10 Gy. In the case of γ irradiation from $\text{}^{60}Co$ source, hole concentration of the film decreases from $6.3 \times 10^{16}//cm^3$ to $4.1 \times 10^{16}//cm^3$ and to $2.9 \times 10^{16}//cm^3$ after successive expositions with a dose of 20 Gy.
- Źródło:
-
Acta Physica Polonica A; 2011, 120, 6A; A-069-A-072
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł