- Tytuł:
- Growth of GaN Metalorganic Chemical Vapour Deposition Layers on GaN Single Crystals
- Autorzy:
-
Pakula, K.
Baranowski, J. M.
Stępniewski, R.
Wysmołek, A.
Grzegory, I.
Jun, J.
Porowski, S.
Sawicki, M.
Starowieyski, K. - Powiązania:
- https://bibliotekanauki.pl/articles/1933937.pdf
- Data publikacji:
- 1995-11
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
78.66.Fd
78.55.Cr - Opis:
- The homoepitaxial growth of GaN layers has been achieved for the first time. Bulk GaN single crystals which have been used as a substrate have been grown from diluted solution of atomic nitrogen in the liquid gallium at 1600°C and at nitrogen pressure of about 15-20 kbar. It is shown that a terrace growth of GaN epitaxial layer has been realized. The high quality of the GaN film has been confirmed by luminescence measurements. The analysis of donor-acceptor and exciton luminescence is presented.
- Źródło:
-
Acta Physica Polonica A; 1995, 88, 5; 861-864
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł