Autor: Jakieła, B. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Cathodoluminescence Measurements at Liquid Helium Temperature of Poly- and Monocrystalline ZnO Films
Autorzy:: Witkowski, B.
Wachnicki, Ł.
Jakieła, R.
Guziewicz, E.
Godlewski, M.
Powiązania:: https://bibliotekanauki.pl/articles/1492546.pdf
Data publikacji:: 2011-12
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.60.Hk
77.55.hf
68.37.Hk
61.72.Ff
Opis:: Scanning electron microscopy, cathodoluminescence and secondary ion mass spectroscopy investigations are used to study an inter-link between structural quality, elements distribution and light emission properties of ZnO poly- and monocrystalline films grown by the atomic layer deposition. Cathodoluminescence and scanning electron microscopy investigations were performed at liquid helium temperature for four different types of ZnO films deposited on different substrates.
Źródło:: Acta Physica Polonica A; 2011, 120, 6A; A-028-A-030
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: ZnCoO Films by Atomic Layer Deposition - Influence of a Growth Temperature οn Uniformity of Cobalt Distribution
Autorzy:: Łukasiewicz, M.
Witkowski, B.
Godlewski, M.
Guziewicz, E.
Sawicki, M.
Paszkowicz, W.
Łusakowska, E.
Jakieła, R.
Krajewski, T.
Kowalik, I.
Kowalski, B.
Powiązania:: https://bibliotekanauki.pl/articles/1791350.pdf
Data publikacji:: 2009-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 68.55.Ln
68.55.Nq
78.66.Hf
81.15.Kk
Opis:: We report on the structural, electrical and magnetic properties of ZnCoO thin films grown by atomic layer deposition method using reactive organic precursors of zinc and cobalt. As a zinc precursor we applied either dimethylzinc or diethylzinc and cobalt(II) acetyloacetonate as a cobalt precursor. The use of these precursors allowed us the significant reduction of a growth temperature to 300°C and below, which proved to be very important for the growth of uniform films of ZnCoO. Structural, electrical and magnetic properties of the obtained ZnCoO layers will be discussed based on the results of secondary ion mass spectroscopy, scanning electron microscopy, energy dispersive spectroscopy, X-ray diffraction, atomic force microscopy, Hall effect and SQUID investigations.
Źródło:: Acta Physica Polonica A; 2009, 116, 5; 921-923
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Schottky Junctions Based on the ALD-ZnO Thin Films for Electronic Applications
Autorzy:: Krajewski, T.
Luka, G.
Smertenko, P.
Zakrzewski, A.
Dybko, K.
Jakiela, R.
Wachnicki, L.
Gieraltowska, S.
Witkowski, B.
Godlewski, M.
Guziewicz, E.
Powiązania:: https://bibliotekanauki.pl/articles/1492501.pdf
Data publikacji:: 2011-12
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 68.55.ag
73.50.-h
73.50.Bk
73.61.Ga
81.15.-z
81.15.Gh
Opis:: The ZnO-based Schottky diodes revealing a high rectification ratio may be used in many electronic devices. This paper demonstrates several approaches to obtain a ZnO-based Schottky junction with a high rectification ratio. The authors tested several methods such as: post-growth annealing of the ZnO layer, acceptor (nitrogen) doping, as well as the ZnO surface coating with a properly chosen dielectric material. The influence of these approaches on the diode's rectification ratio together with modeling based on the differential approach and thermionic emission theory are presented.
Źródło:: Acta Physica Polonica A; 2011, 120, 6A; A-017-A-021
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 4.

Tytuł:: Ferromagnetic Transition in $Ge_{1-x}Mn_{x}Te$ Layers
Autorzy:: Knoff, W.
Domukhovski, V.
Dybko, K.
Dziawa, P.
Jakieła, R.
Łusakowska, E.
Reszka, A.
Świątek, K.
Taliashvili, B.
Story, T.
Szałowski, K.
Balcerzak, T.
Powiązania:: https://bibliotekanauki.pl/articles/1791343.pdf
Data publikacji:: 2009-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 75.50.Pp
75.30.Et
81.15.Hi
Opis:: Ferromagnetic transition temperature in thin layers of diluted magnetic (semimagnetic) semiconductor $Ge_{1-x}Mn_{x}Te$ was studied experimentally by SQUID magnetometry method and analyzed theoretically for a model Ising-type diluted magnetic system with Ruderman-Kittel-Kasuya-Yosida indirect exchange interaction. The key features of the experimentally observed dependence of the Curie temperature on Mn content (x ≤ 0.12) and conducting hole concentration p = (1-10) × $10^{21} cm^{-3}$ were reproduced theoretically for realistic valence band and crystal lattice parameters of p-$Ge_{1-x}Mn_{x}Te$ taking into account short carrier mean free path encountered in this material and Ruderman-Kittel-Kasuya-Yosida mechanism with both delta-like and diffused character of spatial dependence of the exchange coupling between magnetic ions and free carriers.
Źródło:: Acta Physica Polonica A; 2009, 116, 5; 904-906
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 5.

Tytuł:: Magnetic Properties of Epitaxial (Ge,Mn)Te Thin Films with Varying Crystal Stoichiometry
Autorzy:: Knoff, W.
Domukhovski, V.
Dybko, K.
Dziawa, P.
Górska, M.
Jakieła, R.
Łusakowska, E.
Taliashvili, B.
Story, T.
Reszka, A.
Anderson, J.
Rotundu, C.
Powiązania:: https://bibliotekanauki.pl/articles/1811940.pdf
Data publikacji:: 2008-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 75.50.Pp
Opis:: Magnetization of 1 μm thick ferromagnetic IV-VI (Ge, Mn)Te semiconductor layers with 10 at.% of Mn was studied by SQUID magnetometry method up to the magnetic fields of 70 kOe. The layers were grown on BaF₂ (111) substrates by molecular beam epitaxy with varying Te molecular flux, which permitted the control of layer stoichiometry and conducting hole concentration. X-ray diffraction and in situ electron diffraction characterization of layer growth and crystal structure revealed two-dimensional mode of growth and monocrystalline rhombohedral crystal structure of (Ge, Mn)Te layers. Controlling the layer stoichiometry influences the temperature dependence of magnetization with the ferromagnetic Curie temperature varying in $Ge_{0.9}Mn_{0.1}Te$ layers from $T_c$=30 K (low Te flux) to $T_c$=42 K (high Te flux).
Źródło:: Acta Physica Polonica A; 2008, 114, 5; 1159-1165
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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