Informacja

Drogi użytkowniku, aplikacja do prawidłowego działania wymaga obsługi JavaScript. Proszę włącz obsługę JavaScript w Twojej przeglądarce.

English (EN)·Polski (PL)·Yкраїнський (UK)
Przejdź do strony domowej biblioteki Centralna Biblioteka Wojskowa Link otwiera się w nowym oknie Logo biblioteki Prolib Integro - strona głównaCentralna Biblioteka Wojskowa

Wyszukujesz frazę "J. W." wg kryterium: Autor

  Lista filtrów
Wyrównaj
Wyświetlanie 1-15 z 451
Tytuł:
Adsorption of Oxygen on HF-Etched Si(111) Surfaces: XPS Study
Autorzy:
Iwanowski, R. J.
Sobczak, J. W.
Powiązania:
https://bibliotekanauki.pl/articles/1963382.pdf
Data publikacji:
1997-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
79.60.Dp
Opis:
X-ray photoelectron spectroscopy studies of the Si(111) surfaces, after dilute HF etching and methanol rinse, are reported. These included a detailed analysis of the main core-levels (Si 2p, O 1s) and the valence band spectra. The observed asymmetry of the O 1s lines was attributed to two contributing subpeaks: the main (1) and the minor one (2), shifted ≈ 1.5 eV to higher binding energies. Their relative intensity was found to depend on the air exposure time and on the take-off angle. The peaks were assigned to two different positions of surface oxygen: (1) O chemisorbed with methoxy group, (2) bridging O atom. The valence band X-ray photoelectron spectroscopy spectra reveal the influence of surface states induced by the "chemisorbed O"-Si bond.
Źródło:
Acta Physica Polonica A; 1997, 91, 4; 793-796
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Photoemission and Inverse Photoemission Studies of SiO$\text{}_{2}$
Autorzy:
Sobczak, A.
Nietubyć, R.
Sobczak, J. W.
Powiązania:
https://bibliotekanauki.pl/articles/1931764.pdf
Data publikacji:
1994-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
79.20.Kz
71.25.Tn
79.60.Ht
Opis:
Occupied and unoccupied electron states of amorphous silicon dioxide film supported on Si crystal are studied by using X-ray photoemission and, for the first time, X-ray inverse photoemission (X-ray bremsstrahlung isochromat method). A special care was undertaken to minimize decomposition of silicon oxide during X-ray bremsstrahlung measurements. The experimental spectra are compared with theoretical band structure calculations for amorphous SiO$\text{}_{2}$ from the literature and good overall agreement is found.
Źródło:
Acta Physica Polonica A; 1994, 86, 5; 837-843
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Čerenkov Waveguide SHG: a Less Critical Way to Reach the Efficiency Peak
Autorzy:
Kotačka, L.
Čtyroký, J.
Hoekstra, H. J. W. M.
Powiązania:
https://bibliotekanauki.pl/articles/2015113.pdf
Data publikacji:
2001-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
42.65.Ky
42.82.Et
Opis:
It is well known that the conversion efficiency of the SHG in the Čerenkov regime in a waveguide with a nonlinear substrate exhibits a very sharp peak. Its position in a "pump wavelength-guide thickness" diagram follows a modified dispersion relation. A particular material combination exactly determines both the pump wavelength and the guide thickness. The existence of the peak was also experimentally proved with relatively high normalised conversion efficiency of 210%/(cm W). However, in order to achieve such a high conversion efficiency, the required tolerance in the guide thickness should be smaller than 0.5 nm (the FWHM of the peak is approximately 0.8 nm). The allowed variations in refractive indices are also very low (<10$\text{}^{-3}$). The recent theoretical study of the authors showed that an additional layer (idler) inserted into the waveguide facilitates more degrees of freedom which could relax the conditions for reaching the efficiency peak. This paper presents a detailed study of the behaviour of four-layer waveguide devices with a nonlinear substrate which promise a less constrained way to reach the efficiency peak.
Źródło:
Acta Physica Polonica A; 2001, 99, 1; 135-146
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
X-Ray Photoelectron Study of Yb-Doped InP
Autorzy:
Iwanowski, R. J.
Sobczak, J. W.
Kaliński, Z.
Powiązania:
https://bibliotekanauki.pl/articles/1963388.pdf
Data publikacji:
1997-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
79.60.Bm
71.55.Eq
Opis:
X-ray photoelectron spectra of core levels are reported for InP:Yb. Crystalline InP, doped with Yb to a level of 0.5 at.%, was grown by the synthesized solute diffusion method. An analysis of the core-level spectra of the constituent components, i.e. In 3d$\text{}_{5}\text{}_{/}\text{}_{2}$ and P 2p, revealed a minor influence of the surface oxide species, mainly in the phosphate-like form. The spectrum of the Yb 4d core level was also recorded. The energy of the Yb 4d$\text{}_{3}\text{}_{/}\text{}_{2}$ peak was found identical to that in Yb metal, whereas the 4d$\text{}_{5}\text{}_{/}\text{}_{2}$ peak was found to be shifted to higher binding energies. This effect was found comparable to the case of advanced oxidation of Yb thus confirming its high reactivity, even as a bulk dopant. The data give also a rare experimental example of detection of bulk dopant atoms in a semiconductor matrix by X-ray photoelectron spectroscopy at the limit of detectability.
Źródło:
Acta Physica Polonica A; 1997, 91, 4; 809-813
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
X-Ray Photoelectron Spectroscopy and Optical Reflectivity Studies of Si Surfaces Prepared by Chemical Etching
Autorzy:
Iwanowski, R. J.
Sobczak, J. W.
Kowalski, B. J.
Powiązania:
https://bibliotekanauki.pl/articles/1931749.pdf
Data publikacji:
1994-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
79.60.Bm
78.40.Fy
Opis:
Complementary X-ray photoelectron spectroscopy and optical reflectivity studies of crystalline Si(111) surfaces prepared by two different wet chemical etching processes were performed. These included aqueous HF solution etch or diluted CP-4 bath. Optical reflectivity spectra of Si surfaces, measured in the range 3.7-11 eV, were found strongly dependent on the applied etching process. Analysis of the core level X-ray photoelectron spectroscopy data has shown similarity of the surface structure, irrespectively of the etching procedure. Finally, comparison of optical reflectivity and valence band X-ray photoelectron spectra revealed a qualitative correlation between them indicating dominant influence of the bulk (here, the subsurface region containing polishing-induced defects) in the case studied. This paper is the first one which presents correlations between optical reflectivity and X-ray photoelectron spectroscopy data for Si and thus illustrates a bulk sensitivity of both techniques considered.
Źródło:
Acta Physica Polonica A; 1994, 86, 5; 825-830
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Photoemission Electronic States of Thallium- and Bismuth-Based Superconductors
Autorzy:
Zalecki, R.
Kołodziejczyk, A.
König, J. W.
Gritzner, G.
Powiązania:
https://bibliotekanauki.pl/articles/2014372.pdf
Data publikacji:
2000-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
74.72.-h
79.60.-i
Opis:
X-ray photoemission spectra the core-levels as well as the X-ray photoemission spectra and ultraviolet photoemission spectra from the valence bands of the (Tl$\text{}_{0.6}$Pb$\text{}_{0.5}$)(Sr$\text{}_{0.9}$Ba$\text{}_{0.1}$) Ca$\text{}_{2}$Cu$\text{}_{3}$O$\text{}_{y}$ and (Bi$\text{}_{1.75}$Pb$\text{}_{0.35}$)Sr$\text{}_{1.9}$Ca$\text{}_{2.05}$Cu$\text{}_{3.05}$O$\text{}_{y}$ superconductors were measured and analyzed. Special attention was paid to the valence band X-ray photoemission spectra and ultraviolet photoemission spectra, the Cu 2p core-level X-ray photoemission spectra and the Cu L$\text{}_{2,3}$-M$\text{}_{4,5}$M$\text{}_{4,5}$ and O K-L$\text{}_{2,3}$L$\text{}_{2,3}$ Auger spectra. Both Cu 2p$\text{}_{3}\text{}_{/}\text{}_{2}$ and Cu 2p$\text{}_{1}\text{}_{/}\text{}_{2}$ core-level lines consisted of two spin-orbit split main lines accompanied with the two satellite lines. The charge transfer energy Δ from the oxygen ligand to the copper 3d$\text{}^{9}$ states and the hopping integral t were estimated from the energy separation between the main line and the satellite line taking advantage of the local cluster model calculations and their extension to high-temperature superconductors. The Coulomb correlation on-site energy U$\text{}_{dd}$ of two electrons in the same copper orbital and U$\text{}_{pp}$ of two electrons in the oxygen orbital as well as the correlation energy U$\text{}_{cd}$ of the 2p core hole - 3d electron interaction have been estimated from the Auger electron spectra and the valence band spectra. They are: U$\text{}_{dd}$=6.0±0.5eV, of U$\text{}_{pp}$≅ 10±1eV and of U$\text{}_{cd}$≅ 8.0±0.5eV nearly the same for both the Tl- and Bi-compounds. We conclude that these compounds are the charge transfer strongly-correlated metals.
Źródło:
Acta Physica Polonica A; 2000, 98, 5; 513-524
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
High-Pressure Diffraction Study of Ga$\text{}_{1-x}$Al$\text{}_{x}$As
Autorzy:
Paszkowicz, W.
Dynowska, E.
Żytkiewicz, Z. R.
Dobosz, D.
Otto, J. W.
Powiązania:
https://bibliotekanauki.pl/articles/1964159.pdf
Data publikacji:
1997-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
64.30.+t
62.50.+p
64.70.Kw
Opis:
The Ga$\text{}_{1-x}$Al$\text{}_{x}$As sample of x=0.5 was prepared from a high quality single crystal grown by electroepitaxy on GaAs. The high-pressure diffraction experiments were performed using a diamond anvil cell and a germanium solid state detector. The zinc-blende phase is stable up to about 17.5 GPa on uploading. A high-pressure phase manifests itself at about 17 GPa, a complete phase change occurs at 18.7 GPa. On downloading, the zinc-blende phase reappears at about 10 GPa. The powder pattern of the high-pressure phase shows some similarities with the GaAs high pressure phases.
Źródło:
Acta Physica Polonica A; 1997, 91, 5; 993-996
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Luminescence of Highly Excited Nonpolar a-Plane GaN and AlGaN/GaN Multiple Quantum Wells
Autorzy:
Juršėnas, S.
Kuokštis, E.
Miasojedovas, S.
Kurilčik, G.
Žukauskas, A.
Chen, C. Q.
Yang, J. W.
Adivarahan, V.
Asif Khan, M.
Powiązania:
https://bibliotekanauki.pl/articles/2038100.pdf
Data publikacji:
2004-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Cr
73.21.Fg
72.20.Jv
78.47.+p
Opis:
Carrier recombination dynamics in polar and nonpolar GaN epilayers and GaN/AlGaN multiple quantum wells grown over sapphire substrates with various crystallographic orientation were studied under high photoexcitation by 20 ps laser pulses. The transient of luminescence featured a significant enhancement in nonradiative recombination of free carriers for nonpolar a-plane GaN epilayers compared to conventional c-plane samples. The epitaxial lateral overgrowth technique was demonstrated to significantly improve the quality of nonpolar a-plane films. This was proved by more than 40-fold increase in luminescence decay time (430 ps compared to ≤10 ps in the ordinary a-plane epilayer). Under high-excitation regime, a complete screening of built-in electric field by free carriers in multiple quantum wells grown on c-plane and r-plane sapphire substrates was achieved. Under such high excitation, luminescence efficiency and carrier lifetime of multiple quantum wells was shown to be determined by the substrate quality.
Źródło:
Acta Physica Polonica A; 2004, 105, 6; 567-573
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Luminescence of Highly Photoexcited GaN Epilayers and Heterostructures Grown on Different Sapphire Crystal Planes
Autorzy:
Juršėnas, S.
Miasojedovas, S.
Kurilčik, G.
Liuolia, V.
Žukauskas, A.
Chen, C. Q.
Yang, J. W.
Kuokštis, E.
Adivarahan, V.
Asif Khan, M.
Powiązania:
https://bibliotekanauki.pl/articles/2041736.pdf
Data publikacji:
2005-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Cr
73.21.Fg
72.20.Jv
78.47.+p
Opis:
GaN epilayers and AlGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition on different crystal planes (c, a, and r) of the sapphire substrate were studied by excitation intensity dependent and time-resolved photoluminescence. In polar multiple quantum wells grown on a- and c-planes, a blueshift of the luminescence band with increasing the excitation energy was observed, indicating that screening of built-in field by free carriers takes place, whereas in nonpolar r-plane grown multiple quantum wells, the luminescence band maintained an almost constant peak position. Full screening of built-in field was achieved at the excitation densities higher than 0.3 mJ/cm$\text{}^{2}$. Under conditions of screened built-in electric field the structures were characterized by carrier lifetime. It was shown that nonpolar multiple quantum wells suffer from high density of nonradiative traps that can be due to substrate related threading dislocations.
Źródło:
Acta Physica Polonica A; 2005, 107, 2; 235-239
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Applications of Scanning Tunneling Microscopy To Solid State Physics
Autorzy:
van Kempen, H.
Boon, E. J. G.
van der Wielen, M. C. M. M.
Wildöer, J. W. G.
Prins, M.
Jansen, R.
Schad, R.
Powiązania:
https://bibliotekanauki.pl/articles/1968742.pdf
Data publikacji:
1998-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.16.Ch
68.35.Dv
71.55.Eq
Opis:
Due to the dependence of the tunnel current to material properties like work function, density of states, and spin polarization the scanning tunneling microscope can be used to study a number of solid state physics problems. This will be illustrated with some examples. The presented examples have in common that also the role of the tip properties have to be taken explicitly into account.
Źródło:
Acta Physica Polonica A; 1998, 93, 2; 323-331
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Geological Studies by Means of Proton Microbeam System
Autorzy:
Przybyłowicz, W. J.
Powiązania:
https://bibliotekanauki.pl/articles/2028934.pdf
Data publikacji:
2001-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
41.75.-i
07.78.+s
Opis:
Features necessary to make a scanning nuclear microprobe a useful tool in geological studies are summarized and its present position among other microanalytical techniques is reviewed.
Źródło:
Acta Physica Polonica A; 2001, 100, 5; 679-686
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Correlated Electron Systems of Different Dimensionalities
Autorzy:
Kurzyk, J.
Wójcik, W.
Spałek, J.
Powiązania:
https://bibliotekanauki.pl/articles/1812297.pdf
Data publikacji:
2008-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.27.+a
71.30.+h
71.10.Fd
Opis:
The optimized single-particle wave functions contained in the parameters of the Hubbard model (hopping integral t and intraatomic interaction U) are determined explicitly in the correlated state for electronic systems of various symmetries and dimensions: Hubbard chain, square and triangular lattices, and the three cubic lattices: SC, BCC, and FCC. In effect, the electronic properties of these structures as a function of the interatomic distance R are obtained. In most cases, the model parameters do not scale linearly with the lattice constant. Also, the atomic part of the total ground state energy changes with the U/t ratio and therefore should be (and is) included in the analysis. The solutions of dimensions D>1 are analyzed by utilizing the approximate Gutzwiller treatment.
Źródło:
Acta Physica Polonica A; 2008, 114, 1; 175-178
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optimized Wannier Functions for Hubbard Chain
Autorzy:
Kurzyk, J.
Wójcik, W.
Spałek, J.
Powiązania:
https://bibliotekanauki.pl/articles/1810395.pdf
Data publikacji:
2009-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.27.+a
71.30.+h
71.10.Fd
Opis:
One-dimensional atomic chain with a variable-range hopping is described within the extended Hubbard model. The Gutzwiller-ansatz approximation is used to determine the optimized single-particle (Wannier) wave functions in the correlated state. Hopping integral up to the third neighbors is taken into account and the results are compared with those for the infinite hopping range. Ground state energy of the system is compared with that making use of the rigorous Lieb-Wu solution with the optimized wave functions. The evolution of the properties as a function of interatomic distance is discussed.
Źródło:
Acta Physica Polonica A; 2009, 115, 1; 114-116
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Modulation of the Shubnikov-de Haas Oscillations by the Exchange Interaction in Cd$\text{}_{3-x-y}$Zn$\text{}_{x}$Mn$\text{}_{y}$As$\text{}_{2}$
Autorzy:
Lubczyński, W.
Cisowski, J.
Portal, J.
Powiązania:
https://bibliotekanauki.pl/articles/1887020.pdf
Data publikacji:
1991-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.My
Opis:
New measurements of the Shubnikov-de Haas (SdH) effect in semimagnetic semiconductor (SMSC) Cd$\text{}_{3-x-y}$Zn$\text{}_{x}$Mn$\text{}_{y}$As$\text{}_{2}$ with x = 0.09 and y = 0.018, using continuous magnetic fields up to 25 T, are presented. The observed modulation of the amplitudes of the first and second SdH harmonics as a function of magnetic field is interpreted in terms of the three band Kane model with the exchange interaction included and taking into account the spin-dependent scattering which appears to be particularly important at high magnetic fields.
Źródło:
Acta Physica Polonica A; 1991, 79, 2-3; 377-379
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Lieb-Wu Solution, Gutzwiller-Wave-Function, and Gutzwiller-Ansatz Approximations with Adjustable Single-Particle Wave Function for the Hubbard Chain
Autorzy:
Kurzyk, J.
Spałek, J.
Wójcik, W.
Powiązania:
https://bibliotekanauki.pl/articles/2047324.pdf
Data publikacji:
2007-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.27.+a
71.30.+h
71.10.Fd
Opis:
The optimized single-particle wave functions contained in the parameters of the Hubbard model (t and U) were determined for an infinite atomic chain. In effect, the electronic properties of the chain as a function of interatomic distance R were obtained and compared for the Lieb-Wu exact solution, the Gutzwiller-wave-function approximation, and the Gutzwiller-ansatz case. The ground state energy and other characteristics for the infinite chain were also compared with those obtained earlier for a nanoscopic chain within the exact diagonalization combined with an ab initio adjustment of the single-particle wave functions in the correlated state (exact diagonalization combined with an ab initio method). For the sake of completeness, we briefly characterize also each of the solutions. Our approach completes the Lieb-Wu solution, as it provides the system electronic properties evolution as a function of physically controlable parameter - the interatomic distance.
Źródło:
Acta Physica Polonica A; 2007, 111, 4; 603-618
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 451

Ta witryna wykorzystuje pliki cookies do przechowywania informacji na Twoim komputerze. Pliki cookies stosujemy w celu świadczenia usług na najwyższym poziomie, w tym w sposób dostosowany do indywidualnych potrzeb. Korzystanie z witryny bez zmiany ustawień dotyczących cookies oznacza, że będą one zamieszczane w Twoim komputerze. W każdym momencie możesz dokonać zmiany ustawień dotyczących cookies