- Tytuł:
- Interface Engineering in Heteroepitaxy
- Autorzy:
-
Hong, S. K.
Chen, Y.
Ko, H. J.
Yao, T. - Powiązania:
- https://bibliotekanauki.pl/articles/2035571.pdf
- Data publikacji:
- 2002
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
68.35.-p
68.35.Dv
81.15.-z
81.15.Hi
81.10.Aj - Opis:
- We report the importance of interface engineering in heteroepitaxy with examples of plasma-assisted molecular beam epitaxial ZnO growths on (0001) sapphire substrates and on (0001) GaN/sapphire templates, whose interfaces are engineered to improve and to control properties of ZnO films. The growth of rocksalt structure MgO buffer on Al$\text{}_{2}$O$\text{}_{3}$ (0001) is developed for ZnO epitaxy. By employing the MgO buffer layer, the formation of 30$\text{}^{o}$ rotated mixed domains is prohibited and two-dimensional layer-by-layer growth of ZnO on sapphire substrate is achieved. High-resolution X-ray diffraction reveals the superior improvement in a crystal quality of ZnO films with an MgO buffer. Polarity of wurtzite structure ZnO films on Ga-polar GaN/sapphire templates is controlled by changing interface structures. By forming a single crystalline, monoclinic Ga$\text{}_{2}$O$\text{}_{3}$ interfacial layer between GaN and ZnO through O-plasma pre-exposure on the Ga-polar GaN surface, O-polar ZnO films are grown. By forming the ZnO/GaN heterointerface without an interfacial layer through the Zn pre-exposure on the Ga-polar GaN surface, Zn-polar ZnO films are grown.
- Źródło:
-
Acta Physica Polonica A; 2002, 102, 4-5; 541-554
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł