Autor: Hoffman, J. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Far-Infrared Magneto-Optical Studies of HgTe-CdTe Superlattices in the Semimetallic Regime
Autorzy:: Wojtowicz, T.
Dobrowolska, M.
Furdyna, J.K.
Meyer, J. R.
Bartoli, F. J.
Hoffman, C. A.
Ram-Mohan, L. R.
Powiązania:: https://bibliotekanauki.pl/articles/1888086.pdf
Data publikacji:: 1991-08
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.65.Fa
78.30.Fs
Opis:: We review recent magneto-optical investigations performed on HgTe-CdTe semimetallic superlattices. Far infrared magnetotransmission data obtained as a function of temperature, photon energy, and sense of circular polarization are compared with the predictions of a comprehensive new theory which fully incorporates the complexities of type-III superlattice band structure. It is found that the theory accounts for nearly all of the many unusual features which have been observed experimentally. These include the occurrence of two cyclotron resonances due to holes; the coexistence of electron and hole cyclotron resonances in the low temperature limit; the observation of three distinct CRA minima; a step-like change in the temperature dependence of the electron cyclotron mass; and a dramatic increase of the CRI absorption peak intensity with increasing magnetic field.
Źródło:: Acta Physica Polonica A; 1991, 80, 2; 245-254
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Mobility of Holes in Nanometer Ge-on-Si p-Type Metal-Oxide-Semiconductor Field-Effect Transistors at Low Temperatures
Autorzy:: Grigelionis, I.
Fobelets, K.
Vincent, B.
Mitard, J.
De Jaeger, B.
Simoen, E.
Hoffman, T.
Yavorskiy, D.
Łusakowski, J.
Powiązania:: https://bibliotekanauki.pl/articles/1492960.pdf
Data publikacji:: 2011-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 72.20.My
85.30.Tv
Opis:: We investigated magnetoresistance of p-type Ge-on-Si metal-oxide-semiconductor field-effect transistors in order to determine the hole mobility μ as a function of the gate polarization $(V_{G})$. Measurements were carried out at 4.2 K and magnetic fields up to 10 T. The signal measured was proportional to the derivative of the transistor resistance with respect to $V_{G}$. To determine the hole mobility we developed a method to treat the measured signal which is based on a numerical solution of a differential equation resulting from the theoretical description of the experimental procedure. As a result, we obtained a non-monotonic $μ(V_{G})$ dependence which is a characteristic feature of the carrier transport in gated two-dimensional structures.
Źródło:: Acta Physica Polonica A; 2011, 120, 5; 933-935
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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