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Wyświetlanie 1-15 z 103
Tytuł:
Optical Study of MBE Grown Undoped Si-Si$\text{}_{1-x}$Ge$\text{}_{x}$/Si Superlattices
Autorzy:
Gnezdilov, V. P.
Mironov, M.
Yshakov, V.
Mironov, O. A.
Phillips, P. J.
Parker, E. H. C.
Powiązania:
https://bibliotekanauki.pl/articles/1952678.pdf
Data publikacji:
1996-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.30.-j
78.66.-w
78.66.Db
Opis:
Raman spectroscopy and spectroscopic ellipsometry have been used to characterize Si/Si$\text{}_{0.78}$Ge$\text{}_{0.22}$ superlattices grown by molecular beam epitaxy on (001)Si at different substrate temperatures. The results are interpreted to give information on material and interface quality, layer thicknesses, and state of strain. The observed frequencies of zone-folded longitudinal acoustic phonons in a high quality sample agree well with those calculated using Rytov's theory of acoustic vibrations in layered media.
Źródło:
Acta Physica Polonica A; 1996, 90, 5; 1045-1049
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Piezoelectric Effect in Coherently Strained B-Doped (001)SiGe/Si Heterostructures
Autorzy:
Knizhny, V. I.
Mironov, O. A.
Makarovskii, O. A.
Braithwaite, G.
Mattey, N. L.
Parker, E. H. C.
Phillips, P. J.
Powiązania:
https://bibliotekanauki.pl/articles/1933806.pdf
Data publikacji:
1995-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.50.Rb
73.61.Cw
73.50.Μx
Opis:
We report on two methods which illustrate piezoelectric effects in the strained Si (100)Si $\text{}_{1-x}$/Ge$\text{}_{x}$ system. The non-contact sound excitation technique has been used to reveal the conversion of a high-frequency electric field E into acoustic waves at 77 K which can also be modulated by a dc applied bias voltage (±30 V). The sample was an MBE grown modulation doped Si $\text{}_{0.88}$Ge$\text{}_{0.12}$/(001)Si structure with a carrier sheet density 2.0 × 10 $\text{}^{11}$ cm$\text{}^{-2}$ and a 4.2 K mobility 10500 cm$\text{}^{2}$ V$\text{}^{-1}$ s$\text{}^{-1}$. We deduce that the observed high-frequency electric field acoustic wave conversion is associated with a piezoelectric-like effect possibly due to ordering in the strained SiGe alloy or symmetry breaking effect near Si/SiGe interface. Further evidence is provided by the existence of a piezoelectric phonon interaction in the hot hole energy relaxation mechanism determined from high electric field Shubnikov de Haas He$\text{}^{3}$ low temperature measurements.
Źródło:
Acta Physica Polonica A; 1995, 88, 4; 779-782
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Study of Two-Dimensional Hole Gas at Si/SiGe/Si Inverted Interface
Autorzy:
Sadeghzadeh, M. A.
Mironov, O. A.
Emeleus, C. J.
Parry, C. P.
Phillips, P. J.
Parker, E. H. C.
Whall, T. A.
Powiązania:
https://bibliotekanauki.pl/articles/1992074.pdf
Data publikacji:
1998-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.20.Fz
Opis:
We have studied the transport properties of a two-dimensional hole gas (2DHG) at the inverted interface of a strained Si$\text{}_{0.8}$Ge$\text{}_{0.2}$ quantum well. By application of a bias voltage to a Schottky gate on top of this inverted heterostructure the 2DHG density n$\text{}_{s}$ can be controlled, in the range of (1.5-5.2)×10$\text{}^{11}$ cm$\text{}^{-2}$. At a temperature T=0.33 K, the Hall mobility is 4650 cm$\text{}^{2}$ V$\text{}^{-1}$ s$\text{}^{-1}$ at the maximum carrier density. For lower sheet densities (n$\text{}_{s}$<2×10$\text{}^{11}$ cm$\text{}^{-2}$) the system undergoes a transition from a weak to strongly localised phase of significantly reduced mobility. From low temperature Shubnikov-de Haas oscillation measurements we have extracted the hole effective masses m*=(0.25 → 0.28)m$\text{}_{0}$ and the ratio of transport to quantum lifetimes α=(0.92 → 0.85) for the corresponding carrier density change of n$\text{}_{s}$=(5.2 → 2.5)×10$\text{}^{11}$ cm$\text{}^{-2}$. These results can be explained in terms of the abnormal movement of the hole wave function towards the interface with decreasing n$\text{}_{s}$, short range interface charge and interface roughness scattering.
Źródło:
Acta Physica Polonica A; 1998, 94, 3; 503-508
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Intermolecular Effects of Fluorocarbons on MC800 Asphaltene and their Characterization
Autorzy:
Kirimli, H.
Ovalioglu, H.
Akay, C.
Powiązania:
https://bibliotekanauki.pl/articles/1030284.pdf
Data publikacji:
2017-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
76.70.Fz
83.80.Hj
68.37.Hk
61.72.Ff
Opis:
Nuclear magnetic resonance and dynamic nuclear polarization experiments were performed to study suspensions of asphaltene in the fluorocarbons at a low magnetic field of 1.53 mT, at room temperature. The asphaltene was extracted from MC800 liquid asphalt, which was of Heavy Iran origin. The elemental composition and the surface morphology of the asphaltene were determined by scanning electron microscopy and energy dispersive X-ray analysis. Intermolecular spin-spin interactions occur between nuclear spins of hydrogen in the solvent medium and the free electron spins in the asphaltene micelles. The electron paramagnetic resonance spectrum of the asphaltene was obtained and the saturation experiments were applied to the samples prepared in vacuum. The main ¹H DNP parameters were listed. Chemical composition and molecular structure of the asphaltene were analyzed. Scanning electron microscope images have shown that asphaltenes are constituted of agglomerated particles and smooth surfaces. Energy dispersive X-ray analysis has shown that the most abundant element is carbon.
Źródło:
Acta Physica Polonica A; 2017, 131, 3; 336-338
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Intermolecular Magnetic Spin-Spin Interaction in Asphaltene Suspensions at 1.53 mT
Autorzy:
Ovalioglu, H.
Kirimli, H.
Akay, C.
Powiązania:
https://bibliotekanauki.pl/articles/1398790.pdf
Data publikacji:
2016-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
76.70.Fz
82.56.-b
83.80.Hj
68.37.Hk
Opis:
In this study, Overhauser effect (OE) type of dynamic nuclear polarization (DNP) experiments were performed to study suspensions of MC800 asphaltene in bromopentafluorobenzene, chloropentafluorobenzene and hexafluorobenzene aromatic solvents. The experiments were performed at a low field of 1.53 mT in a double-resonance nuclear magnetic resonance (NMR) spectrometer. In this technique the nuclei of diffusing solvent molecules and the unpaired electron existing on the asphaltene micelles interact magnetically. The DNP parameters were determined. Additionally, the interactions between ¹⁹F nuclei of the solvent and the electrons delocalized on the asphaltene are interpreted. The highest enhancement factor value (5.90) was obtained for the hexafluorobenzene solvent medium, because between these, hexafluorobenzene has the highest fluorine atom number. The solvent molecules attach to the colloidal asphaltene particles for a very short time forming complexes and making scalar interaction. Morphologies of asphaltene surfaces depending on the solvent effects were observed by using scanning electron microscopy (SEM).
Źródło:
Acta Physica Polonica A; 2016, 129, 4; 806-809
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Synthesis, Structure, Photoluminescence, and Raman Spectrum of Indium Oxide Nanowires
Autorzy:
Kim, H.
Na, H.
Yang, J.
Lee,, C.
Powiązania:
https://bibliotekanauki.pl/articles/1505485.pdf
Data publikacji:
2011-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.07.-b
78.55.-m
Opis:
Production of indium oxide $(In_2O_3)$ whiskers at a very low temperature of 650°C was reported. The synthetic route was comprised of a thermal heating process of a mixture of In and Mg powders. We have investigated the structural properties of the as-synthesized nanowires by using X-ray diffraction and scanning electron microscopy. The product consisted of one-dimensional nanowires, with a crystalline cubic structure of $In_2O_3$. The photoluminescence measurement with the Gaussian fitting exhibited visible light emission bands centered at 2.1 eV and 2.8 eV. The peaks of the Raman spectrum were indexed to the modes being associated with cubic $In_2O_3$.
Źródło:
Acta Physica Polonica A; 2011, 119, 2; 143-145
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Improved Nucleation and Transition by Plasma Treatments for Fast Response Optically-Compensated-Bend Displays
Autorzy:
Wu, G.
Huang, C.
Chien, H.
Powiązania:
https://bibliotekanauki.pl/articles/1400462.pdf
Data publikacji:
2013-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
52.77.-j
81.65.-b
42.79.Kr
64.60.Q-
Opis:
The optically-compensated-bend mode pi-cell displays exhibit fast-response time and wide-viewing angle characteristics. However, it requires a transition of the liquid crystal molecule from an initial splay state to the bend state configuration before providing the quick operation. A high voltage and a long warm-up time are needed to transform to the bend state. In this paper, the polyimide alignment films have been modified to reduce the splay-to-bend transition time by plasma beam treatments. The proposed method was demonstrated to be highly effective in improving the overall transition time. The number of splay-to-bend nucleation sites in the assembled liquid crystal cells could be increased dramatically by up to 20 times at the initial stage, and the improvement in the cell warm-up time was achieved at 45-71% reduction at 5.5 V. The plasma processing parameters were optimized at the plasma power of 700 W, the plasma distance of 25 mm, and the plasma scan speed of 600 mm/s. In addition, we maintained the excellent optical properties and response time characteristics for the optically-compensated-bend mode liquid crystal displays.
Źródło:
Acta Physica Polonica A; 2013, 123, 5; 892-895
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Development of Carbon Nanotube Based Reflection Type X-ray Source
Autorzy:
Choi, H.
Kim, J.
Lee, C.
Powiązania:
https://bibliotekanauki.pl/articles/1807922.pdf
Data publikacji:
2009-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.47.Lx
75.47.Gk
73.50.Fq
Opis:
X-ray imaging technology is a useful and leading medical diagnostic tool for health care professionals to diagnose disease in human body. Carbon nanotube based X-ray source, which we have developed in this study, could be also useful and supply integrated diagnostic X-ray imaging tool in diagnosis. Conventionally, thermionic type of tungsten filament X-ray tube is widely employed in the field of biomedical and industrial application fields. However, intrinsic problems, such as poor emission efficiency, low imaging resolution, and high electrical energy consumption etc., may cause the limitation of using the X-ray tube. To fulfill the current market requirement, specifically for medical diagnostic field, we have developed rather a portable and compact carbon nanotube based X-ray device in which microfocus high imaging resolution can be feasible.
Źródło:
Acta Physica Polonica A; 2009, 115, 6; 1078-1080
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Classical Control of Quantized Fields: Cavity Qed and the Photon Pistol
Autorzy:
Eberly, J. H.
Law, C. K.
Powiązania:
https://bibliotekanauki.pl/articles/1968508.pdf
Data publikacji:
1998-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
42.50.Dv
42.50.Ct
32.80.Qk
Opis:
By using the double-lambda configuration of energy levels and three classical fields, an atom or ion in a high-Q resonant cavity can be manipulated to create a single-mode quantum state in the cavity that is an arbitrary combination of Fock states for that mode. The same principles of operation can be applied to a cavity with much lower Q in order to produce a "photon pistol", a device that "shoots" one and only one photon when a trigger is pulled, and emits no photons at other times.
Źródło:
Acta Physica Polonica A; 1998, 93, 1; 55-62
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Calcul des contraintes dans une couche mince deposee sur un substrat
Autorzy:
Bertholon, G.
Dupuy, C.
Surry, C.
Redon, R.
Zahouani, H.
Powiązania:
https://bibliotekanauki.pl/articles/1929268.pdf
Data publikacji:
1993-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.-a
Opis:
CALCULATIONS OF THE CONSTRAINTS IN A THIN FILM DEPOSITED ON THE SUBSTRATE: The aim of the present paper is to give simple calculations of the constraints in a thin film deposited on the substrate. The thin film can be obtained by the recrystallization of the surface. It is considered in relation to its substrate, where the force is linearly proportional to the surface area of the film. On the other hand, it is considered to be under the action of a force related to the thermic and compressional constraints. The initial and final boundary conditions in the linearized model play an essential role in the model adopted.
Źródło:
Acta Physica Polonica A; 1993, 83, 5; 581-585
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Vickers and Knoop Indentation Microhardness Study of β-SiAlON Ceramic
Autorzy:
Güder, H.
Şahin, E.
Şahin, O.
Göçmez, H.
Duran, C.
Ali Çetinkara, H.
Powiązania:
https://bibliotekanauki.pl/articles/1492772.pdf
Data publikacji:
2011-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
62.20.-x
62.20.Qp
62.20.de
Opis:
In this paper, analysis and interpretation of mechanical property measurements of β-SiAlON ceramic were reported. Indentation microhardness of β-SiAlON ceramic was measured using the Knoop and Vickers indenters. The analysis of the Vickers indentation microhardness data reveals the reverse indentation size effect that is the apparent microhardness increases with increasing applied indentation test load. However, the Knoop indentation microhardness data exhibit indentation size effect that is the apparent microhardness increases with decreasing applied test load. The experimental Knoop microhardness data was analyzed using Meyer's law, elastic-plastic deformation model, proportional specimen resistance model, and Hays-Kendall's model. As a result, modified proportional specimen resistance model is found to be the most effective one for the load-independent $(H_{LI})$ microhardness determination of the SiAlON ceramic. It was seen that different models used to analyze the data obtained from the Vickers indentation do not give the same intrinsic hardness value. We also present the calculation of the Young modulus, E, of the β-SiAlON ceramic.
Źródło:
Acta Physica Polonica A; 2011, 120, 6; 1026-1033
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electronic Energy Loss of the Partially Stripped Boron-Like and Carbon-Like Fast Ions
Autorzy:
Gümüş, H.
Özalp, C.
Köroğlu, A.
Powiązania:
https://bibliotekanauki.pl/articles/2035735.pdf
Data publikacji:
2003-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
34.50.Bw
61.85.+p
Opis:
An analytical formula of the electronic stopping power expression in this study was derived for swift boron-like and carbon-like ions by using first-order perturbation theory and frozen-charge-state model. The Hartree- Fock-Slater determinant was used for the description of the bound electrons attached to ions in the ground state and orbital-screening parameter was determined by variational method. The calculated ground state energies in this study were compared with the results of Clementi-Roetti and they are in good agreement with 5%. It has been observed that the difference of energy loss for boron-like and carbon-like projectiles in a frozen-charge state increases as an atomic number increases. Furthermore, the analytical expression of the effective charge of boron-like and carbon-like projectiles was derived.zapisz i p
Źródło:
Acta Physica Polonica A; 2003, 103, 4; 349-363
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Experimental characterization of antimony dopant in silicon substrate
Autorzy:
Serrar, H.
Labbani, R.
Benazzouz, C.
Powiązania:
https://bibliotekanauki.pl/articles/1065353.pdf
Data publikacji:
2016-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.U-
68.55.Ln
85.40.Ry
Opis:
Ion implantation is a method largely used to fabricate shallow junctions in the surface target. However, the ions are randomly redistributed and a huge damage is generated in the sample. Annealing treatments are thus necessary to restore defects and to activate the dopant. Among several elements, antimony is particularly attractive since it has low diffusivity in silicon which means that is suitable to obtain ultra shallow junctions. Moreover, antimony is attractive in many applications such as the fabrication of transistors and infrared detectors. In this work, the electrical activation of antimony is studied in case of silicon target.
Źródło:
Acta Physica Polonica A; 2016, 130, 1; 51-54
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Stopping Power Calculations for Partially Stripped Projectiles in High Energy Region
Autorzy:
Tufan, M. Ç.
Köroğlu, A.
Gümüş, H.
Powiązania:
https://bibliotekanauki.pl/articles/2041828.pdf
Data publikacji:
2005-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
34.50.Bw
34.10.+x
Opis:
The electronic stopping cross-section is calculated in the spirit of the Bethe theory. Interaction potential between projectile and target is regarded to have a Coulombic character and we have modified it to take into account velocity dependences on a number of bound electrons of projectile and an effective charge of projectile and target. These velocity dependences are obtained from the Bohr adiabatic criterion using the Thomas-Fermi atomic model. We have get the electronic stopping cross-section expression using the Bethe approximation; we obtained the stopping cross-section of C and Al for C, O, and Si ions from this expression and compared our results with experiment and other theoretical calculations.
Źródło:
Acta Physica Polonica A; 2005, 107, 3; 459-472
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Application of Generalized Pair Approximation to Diluted Magnetic Semiconductor Quantum Structures
Autorzy:
Bednarski, H.
Cisowski, J.
Portal, J. C.
Powiązania:
https://bibliotekanauki.pl/articles/1947680.pdf
Data publikacji:
1996-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.70.Ej
75.30.Et
Opis:
Analysing the d-d interaction in diluted magnetic semiconductor quantum structures, we used our generalized pair approximation which permits to take into account the real spatial distribution of the magnetic ions in diluted magnetic semiconductor layers close to the nonmagnetic quantum well. We subsequently applied our approach to calculate the Zeeman splittings in the CdTe/Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te quantum structures with x=5 and 7.5% and we obtained a good agreement with the experimental results.
Źródło:
Acta Physica Polonica A; 1996, 90, 4; 723-726
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 103

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