- Tytuł:
- Superconducting Layers by Gallium Implantation and Short-Term Annealing in Semiconductors
- Autorzy:
-
Fiedler, J.
Heera, V.
Voelskow, M.
Mücklich, A.
Reuther, H.
Skorupa, W.
Gobsch, G.
Helm, M. - Powiązania:
- https://bibliotekanauki.pl/articles/1400477.pdf
- Data publikacji:
- 2013-05
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
- 74.78.-w
- Opis:
- Superconducting layers in silicon and germanium are fabricated via gallium implantation through a thin $SiO_2$ cover layer and subsequent rapid thermal annealing. Gallium accumulation at the $SiO_2//Si$ and $SiO_2//Ge$ interfaces is observed but no pure gallium phases were found. In both cases superconducting transition occurs around 6-7 K which can be attributed to the metallic conducting, gallium rich interface layer. However, the superconducting as well as the normal-state transport properties in gallium overdoped silicon or germanium are different.
- Źródło:
-
Acta Physica Polonica A; 2013, 123, 5; 916-919
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł