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    Wyświetlanie 1-6 z 6
    Tytuł:
    Localization of Excitons in the Wetting Layer Accompanying Self-Assembled InAs/GaAs Quantum Dots
    Autorzy:
    Babinski, A.
    Raymond, S.
    Wasilewski, Z.
    Lapointe, J.
    Potemski, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/2038091.pdf
    Data publikacji:
    2004-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.35.Pq
    71.35.Ji
    71.70.Ej
    Opis:
    A wetting layer is a narrow, highly strained quantum well, which accompanies quantum dots grown in Stranski-Krastanow mode. Its importance for a full description of the quantum dots properties has recently been pointed out. It has been shown for example that excitons can be localized by potential fluctuations in the wetting layer. This is equivalent to the formation of "natural" quantum dots in the WL. Excitonic emission from the single dots formed in the wetting layer accompanying the InAs/GaAs self-assembled quantum dots has been investigated in a high magnetic field (up to 23 T). Quadruplet splitting of the investigated emission line has been observed. The attribution of the emission line to the recombination of negatively charged exciton is discussed.
    Źródło:
    Acta Physica Polonica A; 2004, 105, 6; 547-552
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Quantum Confinement in InAs/GaAs Systems with Self-Assembled Quantum Dots Grown Using In-Flush Technique
    Autorzy:
    Molas, M.
    Kuldová, K.
    Borysiuk, J.
    Wasilewski, Z.
    Babiński, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/2048050.pdf
    Data publikacji:
    2011-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.Cr
    78.67.Hc
    Opis:
    The effect of In-flush technique application to the MBE-grown structure with self-assembled quantum dots is investigated in this work. The microphotoluminescence from structures with the InAs/GaAs dots grown with and without the In-flush has been investigated. We focus our attention on "not fully developed" dots, which can be clearly distinguished in the spectrum. The dots have also been identified in the transmission electron microscopy analysis of the structures. The In-flush does not influence a broad energy range of those features. Instead we have found that the anisotropic exchange energy splitting of neutral excitons confined in those in the structure grown with In-flush is substantially lower that the splitting in the structure with no In-flush. This observation confirms that the In-flush leads not only to better uniformity of self-assembled quantum dots but also to reduction of lateral potential, anisotropy, which is believed to result in the neutral exciton splitting.
    Źródło:
    Acta Physica Polonica A; 2011, 119, 5; 624-626
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    The Fine Structure of a Triexciton in Single InAs/GaAs Quantum Dots
    Autorzy:
    Molas, M.
    Gołasa, K.
    Furman, M.
    Lapointe, J.
    Wasilewski, Z.
    Potemski, M.
    Babiński, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1403615.pdf
    Data publikacji:
    2012-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.Cr
    78.67.Hc
    Opis:
    Results of experimental study of multiexcitonic emission related to the p-shell of single self-assembled InAs/GaAs quantum dots are presented. Optical properties of a first emission line to appear from the p-shell of a strongly excited quantum dots are investigated using low-temperature polarization-sensitive micro-photoluminescence measurements. The emission line is attributed to the recombination of a complex of three electrons and holes confined in a dot (neutral triexciton), 3X. It is found that the emission consists of two linearly polarized components and the fine structure splitting is larger than the respective splitting of a neutral exciton. The optical anisotropy of the 3X emission is related to the anisotropy of the quantum dot localizing potential. The axis of the 3X optical anisotropy changes from dot to dot covering broad range within ± 50 degrees with respect to the axis defined by the optical anisotropy of a neutral exciton (X). Possible origin of the deviation is discussed.
    Źródło:
    Acta Physica Polonica A; 2012, 122, 6; 991-993
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Properties of Excitons in Quantum Dots with a Weak Confinement
    Autorzy:
    Gołasa, K.
    Molas, M.
    Goryca, M.
    Kazimierczuk, T.
    Smoleński, T.
    Koperski, M.
    Golnik, A.
    Kossacki, P.
    Potemski, M.
    Wasilewski, Z.
    Babiński, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1399080.pdf
    Data publikacji:
    2013-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.Cr
    78.67.Hc
    Opis:
    Statistical properties of neutral excitons, biexcitons and trions confined to natural quantum dots formed in the InAs/GaAs wetting layer are reported. The correlation of the trion binding energy and the biexciton binding energy was found. Magnetospectroscopic measurements of the excitons revealed also the correlation of excitonic effective $g^\ast $ factor of an exciton with the biexciton binding energy. The qualitative picture of the effect of quantum confinement on the observed correlations is presented.
    Źródło:
    Acta Physica Polonica A; 2013, 124, 5; 781-784
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Neutral and Charged Excitons Localized in the InAs/GaAs Wetting Layer
    Autorzy:
    Babiński, A.
    Czyż, M.
    Golnik, A.
    Borysiuk, J.
    Kret, S.
    Raymond, S.
    Lapointe, J.
    Wasilewski, Z.
    Powiązania:
    https://bibliotekanauki.pl/articles/1811914.pdf
    Data publikacji:
    2008-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.21.La
    78.55.Cr
    78.67.Hc
    Opis:
    It has recently been shown that potential fluctuations in a wetting layer, which accompanies InAs/GaAs quantum dots can localize excitons. Neutral excitons and biexcitons and charged excitons were identified. In this communication we report on studies of properties of the excitons over wide temperature range (T < 70 K). The micro-photoluminescence measurements enable investigation of excitons localized in a single potential fluctuation. Temperature-induced broadening of the neutral exciton as well as a quenching of the charged exciton at temperatures higher than 50 K are observed and discussed.
    Źródło:
    Acta Physica Polonica A; 2008, 114, 5; 1055-1060
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    GaSb Dots Grown on GaAs Surface by Metalorganic Chemical Vapour Deposition
    Autorzy:
    Bożek, R.
    Babiński, A.
    Baranowski, J. M.
    Stępniewski, R.
    Klusek, Z.
    Olejniczak, W.
    Starowieyski, K.
    Wróbel, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1934054.pdf
    Data publikacji:
    1995-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.15.Gh
    68.55.-a
    Opis:
    We report metaloorganic chemical vapour deposition growth of an anisotropic GaSb islands on GaAs (001) surface with a typical dimensions around 200 nm. Results of investigations employing scanning electron microscope, scanning tunnelling microscope and ph9tocapacitance are presented.
    Źródło:
    Acta Physica Polonica A; 1995, 88, 5; 974-976
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-6 z 6

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