- Tytuł:
- On Trap Generation in SiO$\text{}_{2}$ Films of Si MOSFETS by Hot Electrons
- Autorzy:
-
Strzałkowski, I.
Marczewski, M.
Kowalski, M.
Jastrzębski, C.
Bąkowski, A. - Powiązania:
- https://bibliotekanauki.pl/articles/1921597.pdf
- Data publikacji:
- 1992-10
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
72.20.Jv
73.40.Qv
73.60.Hy - Opis:
- Trap generation in amorphous SiO$\text{}_{2}$ films with thickness about 500 Å was studied by nonavalanche injection of hot electrons. The trap density, the electron capture cross-section of native and generated traps and the effective trap generation constant for the oxide fields of 1-4 MV/cm, injected charge density up to 3 × 10$\text{}^{19}$ e/cm$\text{}^{-2}$ and injected current density in the range 2-300 μA/cm$\text{}^{2}$ were determined and discussed.
- Źródło:
-
Acta Physica Polonica A; 1992, 82, 4; 685-688
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł