Autor: Andreev, I. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Electrical and Optical Characteristics of $n-GaSb//n-GaIn_{0.24}AsSb//p-GaAl_{0.34}AsSb$ Heterostructure Photodiode
Autorzy:: Ahmetoglu, M.
Kucur, B.
Andreev, I.
Kunitsyna, E.
Mikhailova, M.
Yakovlev, Y.
Powiązania:: https://bibliotekanauki.pl/articles/1401231.pdf
Data publikacji:: 2015-04
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 72.20.-i
73.40.Kp
72.40.+w
Opis:: In the present paper, electrical and optical properties of $n-GaSb//n-GaIn_{0.24}AsSb//p-GaAl_{0.34}AsSb$ double heterostructure (DH) with a diameter of 0.3 mm are reported. The current-voltage (I-V) characteristics of the structure were investigated at several temperatures in both, dark and under the illumination conditions. The effect of illumination was studied at different intensity values. Short circuit current and open circuit voltage as a function of intensity of incident light in photovoltaic mode are investigated.
Źródło:: Acta Physica Polonica A; 2015, 127, 4; 1007-1009
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Electrical Properties of GaInAsSb/GaSb/GaAlAsSb Double Heterostructure with Low Diameter
Autorzy:: Kucur, B.
Ahmetoglu, M.
Andreev, I.
Kunitsyna, E.
Mikhailova, M.
Yakovlev, Y.
Powiązania:: https://bibliotekanauki.pl/articles/1194577.pdf
Data publikacji:: 2014-02
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 73.40.-c
78.66.-w
85.60.Dw
Opis:: GaInAsSb/GaSb/GaAlAsSb double heterostructures are attractive for optoelectronic devices working in the 1.5-4.8 μm wavelength region. In this paper, the current mechanisms of liquid phase epitaxy grown GaInAsSb based double heterostructures with 100 μm diameter were investigated in the temperature range 77-350 K. It was found that diffusion current dominates at the high temperature (> 240 K) and small forward bias region, while generation-recombination current dominates at intermediate temperatures (242-171 K). At low temperature region (< 171 K), the tunneling mechanism of the current flow dominates in both forward and reverse biases.
Źródło:: Acta Physica Polonica A; 2014, 125, 2; 411-413
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Electrical Characteristics and Temperature Dependence of Photovoltaic Parameters of GaInAsSb Based TPV Diode
Autorzy:: Kucur, B.
Ahmetoglu, M.
Andreev, I.
Kunitsyna, E.
Mikhailova, M.
Yakovlev, Y.
Powiązania:: https://bibliotekanauki.pl/articles/1398767.pdf
Data publikacji:: 2016-04
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 73.40.Lq
72.40.+w
85.60.-q
Opis:: In this paper, electrical characterization of low bandgap GaInAsSb based thermophotovoltaic (TPV) diodes were investigated, as well as the temperature dependence of photovoltaic parameters such as short circuit current $(I_{sc})$ and open circuit voltage $(V_{oc})$. Investigation of the dark current mechanisms of the structure was carried out at several temperatures. The effect of light intensity on current-voltage characteristics was also investigated.
Źródło:: Acta Physica Polonica A; 2016, 129, 4; 767-769
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 4.

Tytuł:: Amorphous 5f Ferromagnetic Hydrides $UH_{3}Mo_{x}$
Autorzy:: Tkach, I.
Kim-Ngan, N.
Maškova, S.
Andreev, A.
Matěj, Z.
Havela, L.
Powiązania:: https://bibliotekanauki.pl/articles/1369135.pdf
Data publikacji:: 2014-07
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 75.50.Kj
75.50.Vv
72.15.Cz
Opis:: γ-U metal, stabilized down to room temperature in the bcc structure by Mo doping, can absorb hydrogen at high $H_{2}$ pressures only. The product is amorphous hydride $UH_{3}Mo_{x}$ analogous to $β-UH_{3}$. Such hydrides are ferromagnetic with high Curie temperatures (up to 200 K), enhanced with respect to $β-UH_{3}$. Magnetic moment of U also increases. Large disorder together with high anisotropy lead to a very high coercivity, reaching 4 T at low temperatures. As amorphization normally tends to suppress magnetic ordering of U compounds, such hydrides represent a new class of materials, amorphous U-based ferromagnets with relatively high Curie temperature.
Źródło:: Acta Physica Polonica A; 2014, 126, 1; 292-293
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 5.

Tytuł:: Light Absorption and Photoluminescence in Quantum Dots and Artificial Molecules
Autorzy:: Firsov, D.
Vorobjev, L.
Panevin, V.
Fedosov, N.
Shalygin, V.
Samsonenko, J.
Tonkikh, A.
Cirlin, G.
Andreev, A.
Kryzhanovskaya, N.
Tarasov, I.
Pikhtin, N.
Ustinov, V.
Hanna, S.
Seilmeier, A.
Julien, F.
Zakharov, N.
Werner, P.
Powiązania:: https://bibliotekanauki.pl/articles/2041673.pdf
Data publikacji:: 2005-01
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.30.Fs
Opis:: Intraband absorption in n- and p-doped structures with InAs/GaAs quantum dots covered by InGaAs layers is studied both experimentally and theoretically. The absorption cross-section for p-type quantum dots was found to be significantly smaller than that for n-type quantum dots. Interband absorption bleaching under strong interband excitation is found and investigated in undoped quantum dot structures. Structures with artificial molecules were grown. Photoluminescence spectra and transmission electron microscopy images proves the presence of coupled symmetrical quantum dots.
Źródło:: Acta Physica Polonica A; 2005, 107, 1; 158-162
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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