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Wyszukujesz frazę "Łoś, M." wg kryterium: Autor


Wyświetlanie 1-4 z 4
Tytuł:
Study of Adsorption Properties on Lithium Doped Activated Carbon Materials
Autorzy:
Łoś, S.
Duclaux, L.
Letellier, M.
Azaïs, P.
Powiązania:
https://bibliotekanauki.pl/articles/2043641.pdf
Data publikacji:
2005-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
84.60.-h
33.15.-e
76.30.-v
79.60.-i
Opis:
A volumetric method was applied to study an adsorption coefficient of hydrogen molecules in a gas phase on super activated carbon surface. The investigations were focused on getting the best possible materials for the energy storage. Several treatments on raw samples were used to improve adsorption properties. The biggest capacities were obtained after high temperature treatment at reduced atmosphere. The adsorption coefficient at 77 K and 2 MPa amounts to 3.158 wt%. The charge transfer between lithium and carbon surface groups via the doping reaction enhanced the energy of adsorption. It was also found that there is a gradual decrease in the adsorbed amount of H$\text{}_{2}$ molecules due to occupation active sites by lithium ions.
Źródło:
Acta Physica Polonica A; 2005, 108, 2; 371-377
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
EPR and Impedance Measurements of Graphene Oxide and Reduced Graphene Oxide
Autorzy:
Kempiński, M.
Łoś, S.
Florczak, P.
Kempiński, W.
Jurga, S.
Powiązania:
https://bibliotekanauki.pl/articles/1033701.pdf
Data publikacji:
2017-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.80.Vp
76.30.-v
Opis:
We report the observations of electron paramagnetic resonance and impedance measurements of graphene oxide and reduced graphene oxide performed in the wide temperature range in order to get insight into the electronic properties of graphene-based materials and the role of oxygen functionalities in the charge carrier transport phenomena. In such systems the strong spin localization, hopping charge carrier transport as well as the formation of adsorption layers are observed, all the phenomena changing significantly after the heavily oxidized graphene is reduced.
Źródło:
Acta Physica Polonica A; 2017, 132, 1; 81-85
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Superconductivity of $MgB_2$ Layers Prepared on Silicon Substrate by Implantation of Magnesium Ions into Boron Substrate
Autorzy:
Trybuła, Z.
Kempiński, W.
Łoś, Sz.
Kaszyńska, K.
Trybuła, M.
Piekoszewski, J.
Werner, Z.
Barlak, M.
Powiązania:
https://bibliotekanauki.pl/articles/1536977.pdf
Data publikacji:
2010-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
74.70.-b
74.78.-w
Opis:
The results of investigation of the $MgB_2$ layers prepared on silicon substrate by implantation of Mg ions into boron substrate are presented. After implantation the annealing processes were carried out at temperatures 673 K, 773 K, and 873 K in a furnace in an atmosphere of flowing Ar-4%$H_2$ gas mixture. The samples were characterized by: four-probe electric conductivity measurements and magnetically modulated microwave absorption. Our results showed that due to silicon substrate the diffusion of implanted Mg ions into boron materials should be limited, and the superconducting phase forms a continuous $MgB_2$ layer and the resistivity for all samples fall down to zero below $T_{c}$. The transition temperature $T_{c}$ becomes higher with increasing annealing temperature: $T_{c}$=18 K (for annealing at $T_{A}$=673 K), $T_{c}$=20 K (for annealing at $T_{A}$=773 K), and $T_{c}$=27 K (for annealing at $T_{A}$=873 K).
Źródło:
Acta Physica Polonica A; 2010, 118, 2; 323-325
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The Evolution of Superconducting Phase $MgB_x$
Autorzy:
Łoś, Sz.
Kempiński, W.
Piekara-Sady, L.
Andrzejewski, B.
Jurga, W.
Kaszyńska, K.
Piekoszewski, J.
Werner, Z.
Barlak, M.
Powiązania:
https://bibliotekanauki.pl/articles/1812318.pdf
Data publikacji:
2008-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
74.70.-b
74.78.-w
Opis:
Thin layers of $MgB_x$ were studied in order to define evolution of superconducting phase after Mg ions implantation into boron substrate. Three fluencies of energies 140, 80, and 40 keV were used to establish proper stoichiometry to synthesize homogeneous $MgB_2$ film. Additionally, the annealing processes were carried out at temperatures 400, 500, and 600°C in a furnace in an atmosphere of flowing $Ar-4%H_2$ gas mixture. The quality of the superconducting material was examined by magnetically modulated microwave absorption, and magnetic and resistivity measurements. The results showed that $T_c$ becomes higher with increasing annealing temperature. However, the fraction of superconducting phase decreases, due to partial evaporation of Mg ions and their deeper migration into boron substrate.
Źródło:
Acta Physica Polonica A; 2008, 114, 1; 179-184
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-4 z 4

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