- Tytuł:
- Role of Ionic Processes in Degradation of Wide-Gap II-VI Semiconductor Materials
- Autorzy:
-
Borkovskaya, L.V.
Dzhymaev, B.R.
Korsunskaya, N.E.
Markevich, I.V.
Singaevsky, A.F.
Sheinkman, M.K. - Powiązania:
- https://bibliotekanauki.pl/articles/1858211.pdf
- Data publikacji:
- 1998-08
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
71.55.Jv
78.55.Et - Opis:
- A role of mobile defects in processes responsible for II-VI compound semiconductor characteristic instability is under consideration. These defects have been shown to be responsible for electron-enhanced reactions in these materials, in particular, shallow donor creation in CdS crystals. Accumulation of mobile defects near dislocations results in some specific effects: anisotropy of conductivity induced by electric field and distortion of edge emission spectrum shape. These effects side by side with electron-enhanced defect reactions have been found to influence considerably semiconductor device characteristics.
- Źródło:
-
Acta Physica Polonica A; 1998, 94, 2; 255-259
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł