Wszystkie pola: high-power laser - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Pulsed Power System for the Orion High Power Laser
Autorzy:: Mead, M.
Moncho-Banuls, S.
Pottier, S.
Brasile, J.
Powiązania:: https://bibliotekanauki.pl/articles/1807863.pdf
Data publikacji:: 2009-06
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 42.60.By
84.60.Ve
Opis:: This paper describes the design and testing of the pulsed power system for the Orion Laser, which will be used for high temperature and density plasma physics research. The system supplies 8 MJ of energy to laser amplifiers and Faraday rotators. It consists of 17 capacitor bank modules, each with up to sixteen 150 μF charge storage capacitors, 25 kV power supply and controls. The energy is delivered by spark-gap switches to give a pre-pulse to ionise the flashlamps and a main pulse of 490 μs. The system delivers 5 shots a day with less than 0.2% variation in charge voltage.
Źródło:: Acta Physica Polonica A; 2009, 115, 6; 978-979
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Influence of High Power Laser Beam on Physical Properties of Epitaxial Films of Hg$\text{}_{1-x}$Cd$\text{}_{x}$Te (x≈0.2)
Autorzy:: Kuźma, M.
Abeynayake, C.
Sheregii, E.
Virt, I.
Powiązania:: https://bibliotekanauki.pl/articles/1891472.pdf
Data publikacji:: 1991-09
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 73.60.Cs
81.40.Rs
Opis:: Models have been proposed explaining differences in electrophysical and photoelectrical properties of epitaxial films of Hg$\text{}_{1-x}$Cd$\text{}_{x}$Te (x≈0.2) before and after treating by single pulses of Nd:YAG laser. These models were obtained on the basis of the calculated distributions of temperature, temperature gradient and concentration of interstitial mercury during and after exposing to the laser pulse. These calculations were done using the net method.
Źródło:: Acta Physica Polonica A; 1991, 80, 3; 475-479
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: High Power Continuous Wave Blue InAlGaN Laser Diodes Made by Plasma Assisted MBE
Autorzy:: Skierbiszewski, C.
Siekacz, M.
Wiśniewski, P.
Perlin, P.
Feduniewicz-Żmuda, A.
Cywiński, G.
Smalc, J.
Grzanka, S.
Grzegory, I.
Leszczyński, M.
Porowski, S.
Powiązania:: https://bibliotekanauki.pl/articles/2047002.pdf
Data publikacji:: 2006-09
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 42.55.Px
85.35.Be
42.60.By
73.21.Cd
Opis:: Room temperature, continuous wave operation of InGaN multi-quantum wells laser diodes made by rf plasma assisted molecular beam epitaxy at 411 nm wavelength is demonstrated. The threshold current density and voltage were 4.2 kA/cm$\text{}^{2}$ and 5.3 V, respectively. High optical power output of 60 mW was achieved. The lifetime of these laser diodes exceeds 5 h with 2 mW of optical output power. The laser diodes are fabricated on low dislocation density bulk GaN substrates, at growth conditions which resembles liquid phase epitaxy. We demonstrate that relatively low growth temperatures (600-700°C) pose no intrinsic limitations for fabrication of nitride optoelectronic components by plasma assisted molecular beam epitaxy.
Źródło:: Acta Physica Polonica A; 2006, 110, 3; 345-351
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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