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Wyszukujesz frazę "high aspect ratio" wg kryterium: Wszystkie pola


Wyświetlanie 1-2 z 2
Tytuł:
High aspect ratio graphene nanosheets cause a very low percolation threshold for polymer nanocomposites
Autorzy:
Jan, R.
Habib, A.
Abbasi, H.
Powiązania:
https://bibliotekanauki.pl/articles/1061875.pdf
Data publikacji:
2016-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.80.Tm
Opis:
Liquid exfoliated, high aspect ratio (1272) graphene nanosheets (GNS) are dispersed in thermoplastic polyurethane (TPU) to prepare range of nanocomposites. A three fold increase in direct current conductivity is recorded at 0.0055 volume fraction (V_{f}) of GNS-TPU composites as compared to pristine TPU. It is suggested that the percolation threshold for conducting network achieved at low filler loadings is due to the high aspect ratio and homogeneous dispersion of GNS within the polymer. The experimental results are interpreted using interparticle distance model and modified power law. The two models predict threshold filler loading in 0.015-0.001 range volume fraction GNS based on the average values of mean length and no. of layers per nanosheet. The experimental results favor modified power law as it relies on aspect ratio of fillers. A slight deviation in our study from modified power law may be due to aggregation in as prepared GNS.
Źródło:
Acta Physica Polonica A; 2016, 129, 4; 478-481
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Temperature Dependence of Photoluminescence from Epitaxial InGaAs/GaAs Quantum Dots with High Lateral Aspect Ratio
Autorzy:
Musiał, A.
Sęk, G.
Maryński, A.
Podemski, P.
Misiewicz, J.
Löffler, A.
Höfling, S.
Reitzenstein, S.
Reithmaier, J.
Forchel, A.
Powiązania:
https://bibliotekanauki.pl/articles/1492876.pdf
Data publikacji:
2011-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.67.Hc
65.80.-g
Opis:
Hereby, we present a study of a thermal quenching of emission from self-assembled epitaxial highly asymmetric quantum dots in InGaAs/GaAs material system for both ensemble and single dot regime. Pronounced interplay between the intensity of wetting layer and quantum dots originated emission was observed as the temperature was increased, evidencing a thermally activated energy transfer between the two parts of the system and an important role of the wetting layer in determining the optical properties of these anisotropic nanostructures. The carrier activation energies have been derived and possible carrier loss mechanisms have been analyzed. Single dot study revealed activation energies slightly varying from dot to dot due to size and shape distribution. The problem of the shape uniformity of individual quantum dot has also been addressed and possibility of additional carrier localization within the investigated structures has been found to be insignificant based on the recorded spectroscopic data.
Źródło:
Acta Physica Polonica A; 2011, 120, 5; 883-887
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-2 z 2

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