- Tytuł:
- High Pressure Freeze-out of Electrons in Undoped GaN Crystal. Proof of Existence of Resonant Donor State (Nitrogen Vacancy)
- Autorzy:
-
Perlin, P.
Teisseyre, H.
Suski, T.
Leszczyński, M.
Grzegory, I.
Jun, J.
Porowski, S. - Powiązania:
- https://bibliotekanauki.pl/articles/1931916.pdf
- Data publikacji:
- 1995-01
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
71.55.-i
71.55.Eq - Opis:
- We investigated free carriers related optical absorption in GaN in hydrostatic pressures up to 30 GPa. The disappearance of this absorption at pressures close to 18 GPa was explained by trapping electrons resulting from the shift of nitrogen vacancy related donor level into the GaN energy gap at high pressure. We estimated the energetic position of this level at atmospheric pressure to be about 0.8 eV above the conduction band minimum.
- Źródło:
-
Acta Physica Polonica A; 1995, 87, 1; 141-143
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł