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    Wyświetlanie 1-7 z 7
    Tytuł:
    Crystallization Process of $Fe_{75}Co_5Zr_{10}B_{10}$ Amorphous Alloy
    Autorzy:
    Sun, Y.
    Zuo, B.
    Wang, D.
    Meng, X.
    Liu, J.
    Wang, L.
    Hua, Z.
    Powiązania:
    https://bibliotekanauki.pl/articles/1399278.pdf
    Data publikacji:
    2013-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.43.Dq
    64.60.My
    Opis:
    $Fe_{75}Co_5Zr_{10}B_{10}$ amorphous alloy prepared by melt-spinning was annealed at various temperatures. The thermal property and microstructures were investigated by differential thermal analysis, X-ray diffraction, and transmission electron microscopy. The crystallization process of $Fe_{75}Co_5Zr_{10}B_{10}$ amorphous alloy is complex. The α-Fe phase precipitates from the amorphous matrix in the initial stage of crystallization. The α-Mn type (χ) phase precipitates at 570°C, but transforms to α-Fe phase and the Laves C14(λ) phase at higher temperature. In the final stage of crystallization, $Fe_3Zr$, $Fe_2Zr$, and unknown phases are observed and the λ-phase disappears. The α-Fe phase preferentially nucleates after annealing at 530C for 10 min and the χ-phase preferentially nucleates after annealing at 600C for 10 min. The nucleation barrier of χ-phase is larger than that of α-Fe phase. The local structure of χ-phase is more similar to amorphous phase.
    Źródło:
    Acta Physica Polonica A; 2013, 124, 4; 685-687
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    The Effect of Nb Content on the Thermal, Structural, and Magnetic Properties of FeNbB Ribbons
    Autorzy:
    Hua, Z.
    Zuo, B.
    Li, M.
    Wang, X.
    Wang, L.
    Liu, J.
    Wang, D.
    Dong, L.
    Powiązania:
    https://bibliotekanauki.pl/articles/1365063.pdf
    Data publikacji:
    2014-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    65.60.+a
    61.43.Dq
    Opis:
    Amorphous $Fe_{80-x}Nb_{x}B_{20}$ (x = 5, 10, 15) ribbons were prepared by single-roller melt spinning method. The thermal, structural and magnetic properties of $Fe_{80-x}Nb_{x}B_{20}$ (x = 5, 10, 15) ribbons were investigated using differential thermal analysis, X-ray diffraction, and vibrating sample magnetometer. The thermal stability is the lowest for $Fe_{70}Nb_{10}B_{20}$ ribbon and the highest for $Fe_{65}Nb_{15}B_{20}$ ribbon. Along with the increase of Nb content, the supercooled liquid region Δ $T_{x}$ increases, indicating that the amorphous formation ability improves. The primary stages of crystallization of the three ribbons are different. The primary devitrification phases are $Fe_{23}B_6$ type for $Fe_{70}Nb_{10}B_{20}$ and $Fe_{75}Nb_5B_{20}$ ribbons, and α-Fe type for $Fe_{65}Nb_{15}B_{20}$ ribbon. $Fe_{80-x}Nb_{x}B_{20}$ (x = 5, 10) ribbons are ferromagnetic and the $Fe_{65}Nb_{15}B_{20}$ ribbon is paramagnetic. The saturation magnetization ($M_{s}$) decreases with increasing Nb content.
    Źródło:
    Acta Physica Polonica A; 2014, 125, 5; 1149-1151
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Intervalley Transfer of Electrons in ZnS-Type Thin Film Electroluminescent Devices
    Autorzy:
    Zhao, H.
    Wang, Y.
    Xu, Z.
    Xu, X.
    Powiązania:
    https://bibliotekanauki.pl/articles/2011094.pdf
    Data publikacji:
    1999-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    72.20.-i
    78.60.-b
    Opis:
    Based on the calculation about intervalley scattering rates in ZnS, the intervalley transfer process in ZnS-type thin film electroluminescent devices is investigated through the Monte Carlo simulation. The transient time of intervalley transfer is about 0.2-0.3 ps, it coincides with that of electron average energy. Intervalley distribution shifts to high valleys as the electric field increased. The electron kinetic energy distributions in different valleys are also gained. We propose that high valleys could store energies, which could prolong the decay of the electron average energy as the field was removed. These results could be used as the basic data on the study of electroluminescent process and the citation of valley parameters in analytic models should be carefully considered.
    Źródło:
    Acta Physica Polonica A; 1999, 96, 3-4; 475-482
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Effect of Annealing Temperature and Ambient on Formation, Composition and Bandgap of $Cu_2ZnSnS_4$ Thin Films
    Autorzy:
    Sun, Y.
    Yao, B.
    Meng, X.
    Wang, D.
    Long, D.
    Hua, Z.
    Powiązania:
    https://bibliotekanauki.pl/articles/1205220.pdf
    Data publikacji:
    2014-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.55.-a
    Opis:
    Amorphous Cu-Zn-Sn-S precursor films were prepared by sol-gel and spin-coating with copper chloride, zinc chloride, tin chloride and thiourea solutions as starting materials. A $Cu_2ZnSnS_4$ film with kesterite structure and a small amount of chlorine formed when the precursor was annealed under Ar ambient at temperature above 200°C, but its atomic ratios of Cu:Zn:Sn:S far deviated from stoichiometric ratios of the $Cu_2ZnSnS_4$. However, when the precursor films were annealed with sulfur powder together at temperatures between 360 and 480°C, the CZTS film containing a very small amount of Cl formed, and its atomic ratio change little for Cu, Zn, and Sn, increases for S and decreases for Cl with increasing temperature. When the temperature is 480°C, a CZTS only has Cu, Zn, Sn, and S element is fabricated, and the atomic ratio of Cu:Zn:Sn:S is near the stoichiometric ratio. The bandgap of the CZTS decreases with increasing annealing temperature. The mechanisms of the formation and the properties of the CZTS are suggested in the present work.
    Źródło:
    Acta Physica Polonica A; 2014, 126, 3; 751-756
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Experimental Studies on Charging Operation of a Compact Repetitive Tesla Transformer
    Autorzy:
    Zhang, Z.
    Zhang, J.
    Yang, H.
    Qian, B.
    Meng, Z.
    Li, D.
    Wang, S.
    Cao, Y.
    Zhou, W.
    Powiązania:
    https://bibliotekanauki.pl/articles/1807860.pdf
    Data publikacji:
    2009-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    84.30.Ng
    84.30.Jc
    84.30.Qi
    84.70.+p
    Opis:
    Charging operations of a compact Tesla transformer were experimentally investigated, in single-shot and rep-rate (50 pps for 1 s) modes, respectively. The charging limitations were also explored. The experimental results were compared and analyzed. The maximum secondary charging voltages of the Tesla transformer were measured to be 380 kV and 300 kV in single-shot and rep-rate modes, respectively. The RMS pulse-to-pulse instability of the secondary charging voltage is generally less than 10% but increases with the increasing initial voltage across the primary capacitor. Since the secondary capacitor of the Tesla transformer is a pulse forming line (PFL), continued operation is possible if there is breakdown in the PFL. Furthermore, operation can even be continued under occasional breakdown for some pulses, without the effects on the operations of subsequent pulses.
    Źródło:
    Acta Physica Polonica A; 2009, 115, 6; 973-975
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Specific Heat of RBa$\text{}_{2}$Cu$\text{}_{3}$O$\text{}_{7-x}$ and RBaSrCu$\text{}_{3}$O$\text{}_{7-x}$ Compounds (R = Sm, Dy, Er)
    Autorzy:
    Tarnawski, Z.
    Kim-Ngan, N.-T. H.
    Wang, X. Z.
    Duijn, V. H. M.
    Franse, J. J. M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1968860.pdf
    Data publikacji:
    1998-03
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    74.70.-b
    75.40.-s
    Opis:
    The low-temperature specific-heat C(T) data of high-T$\text{}_{c}$ superconductors RBa$\text{}_{2}$Cu$\text{}_{3}$O$\text{}_{7-x}$(R123O$\text{}_{7-x}$) were reviewed. A discussion of the C(T) data obtained on single-crystalline samples of Er123O$\text{}_{7-x}$ and Sm123O$\text{}_{7-x}$ compounds in applied magnetic fields for better evaluation of the crystal-electric-field parameters is given. The C(T) measurements of Sr-substituted compounds RBaSrCu$\text{}_{3}$O$\text{}_{7}$ revealed the λ-type of peak related to the antiferromagnetic order at 1.2 K and 0.6 K respectively for Dy- and Er-compounds. The magnetic singlet ground state in these compounds is produced by weak exchange interactions of -0.05 T/μ$\text{}_{B}$ and -0.035 T/μ$\text{}_{B}$, respectively. For Nd- and Sm-compounds, only a broad anomaly around 0.6 K was observed which is well fitted with a Schottky-type anomaly with an energy splitting of 1.4 K.
    Źródło:
    Acta Physica Polonica A; 1998, 93, 3; 513-522
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Normal Incidence Mid-Infrared Photocurrent in AlGaN/GaN Quantum Well Infrared Photodetectors
    Autorzy:
    Sherliker, B.
    Halsall, M. P.
    Harrison, P.
    Jovanović, V. D.
    Indjin, D.
    Ikonić, Z.
    Parbrook, P. J.
    Whitehead, M. A.
    Wang, T.
    Buckle, P. D.
    Phillips, J.
    Carder, D.
    Powiązania:
    https://bibliotekanauki.pl/articles/2041680.pdf
    Data publikacji:
    2005-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.30.Fs
    Opis:
    We report the growth and characterization of AlGaN/GaN multiple quantum well structures designed to have intersubband transitions in the mid-infrared region of the spectrum. The samples were nominally undoped but were found to contain a high electron population in the wells induced by the local polarization fields. The sample was characterized by the use of the Raman spectroscopy and photocurrent spectroscopy. The Raman spectroscopy shows electronic Raman scattering from intersubband transitions in the AlGaN/GaN quantum wells. The e$\text{}_{1}$-e$\text{}_{2}$ and e$\text{}_{1}$-e$\text{}_{3}$ transitions of the confined 2d electron population in the wells can clearly be observed. A sample designed to absorb at 4μm was fabricated into mesa structures and the vertical photocurrent measured under normal incidence illumination from the free-electron laser FELIX. A wavelength and bias dependent photocurrent was observed in the mid-IR region of spectrum. The peak responsivity was of the order of 50μA/W at 4 K, the photocurrent still being measurable at room temperature.
    Źródło:
    Acta Physica Polonica A; 2005, 107, 1; 174-178
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-7 z 7

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