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    Wyświetlanie 1-3 z 3
    Tytuł:
    Effect of Granule Shape on the Giant Magnetoresistance for Ferromagnetic Metal-Metal Granular Films
    Autorzy:
    Wang, C.
    Zhang, P.
    Zhang, Y.
    Rong, Y.
    Powiązania:
    https://bibliotekanauki.pl/articles/1814027.pdf
    Data publikacji:
    2007-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    72.15.Gd
    75.47.-m
    75.50.-y
    Opis:
    In order to investigate the effect of granule shape on the giant magnetoresistance, assuming that granular films consist of ellipsoidal ferromagnetic granules embedded in a nonmagnetic metal matrix and the ellipsoidal granules have different demagnetizing factors in three directions, we combined two-current model with the effective medium theory to investigate the effect of granule shape on the giant magnetoresistance. The results revealed that the giant magnetoresistance in granular films depended strongly on the granule shape and was between those for current perpendicular to the plane of the layers and current in the plane of the layers in magnetic multilayers.
    Źródło:
    Acta Physica Polonica A; 2007, 112, 6; 1231-1238
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Compositions of Al-Based Quasicrystals Interpreted by Cluster Formulae
    Autorzy:
    Chen, H.
    Qiang, J.
    Wang, Y.
    Dong, C.
    Powiązania:
    https://bibliotekanauki.pl/articles/1372748.pdf
    Data publikacji:
    2014-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.44.Br
    36.40.-c
    71.20.Lp
    Opis:
    It is known previously that bulk metallic glass compositions satisfy cluster formulae $[cluster](glue atom)_{1, 3}$ of 24 valence electrons as deduced from our cluster-resonance model. In the present work, it is further shown that compositions of Al-based binary and ternary quasicrystals are also explained by 24-electron cluster formulae of the types $[icosahedron](glue atom)_{0, 1}$, where the icosahedral cluster is identified from a corresponding crystalline approximant according to dense atomic packing and cluster isolation criteria, and the glue atom site is either vacant for an icosahedral quasicrystal or equal to one for a decagonal quasicrystal. Ternary quasicrystals are formulated with the same formulae as their basic binary ones but the icosahedron shell sites are substituted by third elements. The 24-electron cluster formulae are then the chemical and electronic structural units of quasicrystals, mimicking the molecular formulae of chemical substances.
    Źródło:
    Acta Physica Polonica A; 2014, 126, 2; 446-448
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Annealing Study of Al/GaSb Contact with the Use of Doppler Broadening Technique
    Autorzy:
    Wang, H. Y.
    Weng, H. M.
    Ling, C. C.
    Ye, B. J.
    Zhou, X. Y.
    Han, R. D.
    Powiązania:
    https://bibliotekanauki.pl/articles/2043365.pdf
    Data publikacji:
    2005-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.70.Bj
    68.35.Ct
    73.40.Sx
    Opis:
    Using a monoenergetic positron beam, annealing study of the Al/n-GaSb system was performed by monitoring the Doppler broadening of the annihilation radiation as a function of the positron implanting energy. The S-parameter against positron energy data was successfully fitted by a three-layer model (Al/interface/GaSb). The annealing out of the open volume defects in the polycrystalline Al layer was revealed by the decrease in the S-parameter and the increase in the effective diffusion length of the Al layer. For the as-deposited samples, a 5 nm interfacial region with S-parameter larger than those of the Al overlayer and the bulk was identified. After the 400ºC annealing, this interfacial region extends to over 40 nm and its S-parameter dramatically drops. This is possibly due to the new phase formation at the interface. Annealing behaviors of S$\text{}_{B}$ and L$\text{}_{+,B}$ of the GaSb bulk showed the annealing out of positron traps (possibly the V$\text{}_{Ga}$-related defect) at 250ºC. However, a further annealing at 400ºC induces the formation of positron traps, which are possibly of another kind of V$\text{}_{Ga}$-related defect and the positron shallow trap GaSb antisite.
    Źródło:
    Acta Physica Polonica A; 2005, 107, 5; 874-879
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-3 z 3

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