Wszystkie pola: Sobkowicz, J. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Potential Fluctuations in HgSe:Fe,Ga - a Numerical Study
Autorzy:: Sobkowicz, P.
Wilamowski, Z.
Kossut, J.
Powiązania:: https://bibliotekanauki.pl/articles/1861521.pdf
Data publikacji:: 1993-10
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 71.55.-i
Opis:: We study spatial correlation of donor charges in HgSe:Fe,Ga using a few simple quantities (mean electrostatic energy of various donor sites, fluctuations of the electrostatic potential). The study uses Monte Carlo simulation techniques. We are able to indicate general trends in the behavior of the correlation when proportion of correlating (Fe^{3+}) and noncorrelating (Ga) charged centers in the sample is changed.
Źródło:: Acta Physica Polonica A; 1993, 84, 4; 645-648
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: InSb/CdTe Heterojuncton: Self-Consistent Calculations of the Energy Structure
Autorzy:: Sobkowicz, P.
Singleton, J.
Greene, S. K.
Powiązania:: https://bibliotekanauki.pl/articles/1891271.pdf
Data publikacji:: 1991-09
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 73.20.Dx
Opis:: Results of self-consistent calculations of the subband energy structure of two-dimensional electron gas in the InSb/CdTe heterojunction are reported. Subband occupations and spin splitting in the absence of magnetic field are presented and compared with results of magneto-transport measurements on high mobility, low carrier density heterojunctions.
Źródło:: Acta Physica Polonica A; 1991, 80, 3; 417-420
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Coulomb versus Madelung Gap: Ordering in a System of Point Charges
Autorzy:: Sobkowicz, P.
Wilamowski, Z.
Kossut, J.
Powiązania:: https://bibliotekanauki.pl/articles/1929618.pdf
Data publikacji:: 1993-09
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 71.55.-i
72.20.Fr
Opis:: Spatial correlations of impurity charges in a mixed valence regime are studied with the use of Monte Carlo simulations. The influence of various kinds of disorder on the one-particle density of states is determined. A continuous transitions from a "soft" Coulomb gap (density of states vanishing only at the chemical potential) to a "hard" gap (with a finite range of energies with vanishing density of states) is found, driven by decreasing amount of built-in disorder in the system. The "hard" Coulomb gap resembles the Madelung gap, found in crystalline arrangements of charges. The similarity reflects the fact that both the Coulomb and Madelung gaps are manifestations of the same phenomenon, resulting from ordering of the positions of point charges, the only difference being the range of correlations.
Źródło:: Acta Physica Polonica A; 1993, 84, 3; 515-518
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 4.

Tytuł:: Monte Carlo Simulations of Spatial Correlations of Charged Centers in δ-Doped Layers
Autorzy:: Sobkowicz, P.
Wilamowski, Z.
Kossut, J.
Powiązania:: https://bibliotekanauki.pl/articles/1921559.pdf
Data publikacji:: 1992-10
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 71.55.Eq
73.20.Dx
71.45.Gm
Opis:: Results of Monte Carlo simulations of a 2D system of charged donors are presented. They enable to study the effects related to a spatial correlation of donor charges located on a random donor matrix. A qualitative difference between DX$\text{}^{+}$ and DX¯ models is observed. In the first case, strong temperature dependence of the correlations and a "freezing-like" behaviour is found. The origin of the freezing is traced to the random distribution of donor sites by comparing the system with a liquid-like model where the charges may assume arbitrary positions within a plane. In the second case only nearest-neighbour correlations are observed. The simulations have direct application in analysis of the behaviour of the DX centers in the GaAs planarly doped with Si.
Źródło:: Acta Physica Polonica A; 1992, 82, 4; 645-648
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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