Informacja

Drogi użytkowniku, aplikacja do prawidłowego działania wymaga obsługi JavaScript. Proszę włącz obsługę JavaScript w Twojej przeglądarce.

Wyszukujesz frazę "Pasternak, A." wg kryterium: Wszystkie pola


Wyświetlanie 1-10 z 10
Tytuł:
Carbon Black--polyethylene Composites Studied by Positron Annihilation
Autorzy:
Dębowska, M.
Rudzińska-Girulska, J.
Pasternak, A.
Poźniak, R.
Powiązania:
https://bibliotekanauki.pl/articles/2007961.pdf
Data publikacji:
1999-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.60.+z
78.70.Bj
82.30.Hk
Opis:
Preliminary results of positron annihilation lifetime measurements, performed for carbon black-LDPE composites with three kinds of carbon black (PRINTEX XE2, VULCAN XC-72, and SAKAP 6) are presented. Four components with lifetimes τ$\text{}_{1}$≈ 120 ps, τ$\text{}_{2}$≈340 ps, τ$\text{}_{3}$≈1.2 ns, τ$\text{}_{4}$≈2.8 ns occurred to be the best fitted to measured positron lifetime spectra. The presence of carbon black resulted only in reduction of intensities of the components with the lifetimes τ$\text{}_{1}$, τ$\text{}_{3}$, τ$\text{}_{4}$ (originating in our opinion from the annihilation of the positronium) and increase in the intensity of the component with the lifetime τ$\text{}_{2}$. The intensities depend both on the content of carbon black and its kind as well. The strongest influence of the carbon black of the highest specific surface area (PRINTEX XE2) has been observed at the intensities which correlate well with the results of studies of resistivity and tensile strength for the same samples.
Źródło:
Acta Physica Polonica A; 1999, 95, 4; 509-514
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
A New System for Acoustoelectronic Gas Sensors Analysis
Autorzy:
Jasek, K.
Miluski, W.
Pasternak, M.
Powiązania:
https://bibliotekanauki.pl/articles/1399357.pdf
Data publikacji:
2013-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
43.35.Pt
46.35.+z
68.35.Ja
Opis:
Typical approach to the surface acoustic waves sensors response analysis is based on the use of self-oscillating circuits with surface acoustic wave device working inside positive feedback loop of an amplifier. Such kind of parametric measurement allows to track the center frequency of the sensor changes in particular. The method is widely used mainly due to their relative simplicity. Unfortunately, it has many disadvantages like frequency (phase) instability, sensitivity to unwanted factors, surface acoustic wave substrate mass-load limit etc. A new system to the analysis of surface acoustic wave gas sensors response as well as an exemplary measurement results are described in the paper. The presented system make the first step to the more complex conception realization.
Źródło:
Acta Physica Polonica A; 2013, 124, 3; 445-447
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Ti-Al-N MAX Phase a Candidate for Ohmic Contacts to n-GaN
Autorzy:
Borysiewicz, M.
Kamińska, E.
Piotrowska, A.
Pasternak, I.
Jakieła, R.
Dynowska, E.
Powiązania:
https://bibliotekanauki.pl/articles/1811915.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.05.cp
68.49.Sf
68.55.ag
81.40.Ef
Opis:
Fabrication of a Ti₂AlN MAX phase for contact applications to GaN-based devices is reported. Sample characterisation was done by means of X-ray diffraction and secondary ion mass spectroscopy. Successful Ti₂AlN monocrystalline growth was observed on GaN and Al₂O₃ substrates by annealing sputter-deposited Ti, Al and TiN layers in Ar flow at 600°C. The phase was not seen to grow when the layers were deposited on Si (111) or when the first layer on the substrate was TiN. N-type GaN samples with Ti₂AlN layers showed ohmic behaviour with contact resistivities in the range 10¯⁴ Ωcm².
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 1061-1066
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optical and Electrical Studies of Graphene Deposited on GaN Nanowires
Autorzy:
Kierdaszuk, J.
Kaźmierczak, P.
Drabińska, A.
Wysmołek, A.
Korona, K.
Kamińska, M.
Pakuła, K.
Pasternak, I.
Krajewska, A.
Żytkiewicz, Z.
Powiązania:
https://bibliotekanauki.pl/articles/1195433.pdf
Data publikacji:
2014-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.05.ue
72.10.Fk
78.67.Wj
72.80.Vp
Opis:
In this paper using scanning electron microscope, contactless microwave electronic transport and the Raman spectroscopy we studied the properties of graphene deposited on GaN nanowires and compared it with the graphene deposited on GaN epilayer. The Raman micro-mapping showed that nanowires locally change the strain and the concentration of carriers in graphene. Additionally we observed that nanowires increase the intensity of the Raman spectra by more than one order of magnitude.
Źródło:
Acta Physica Polonica A; 2014, 126, 5; 1087-1089
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Planar Optical Waveguides Based on Thin ZnO Layers
Autorzy:
Struk, P.
Pustelny, T.
Gut, K.
Gołaszewska, K.
Kamińska, E.
Ekielski, M.
Pasternak, I.
Łusakowska, E.
Piotrowska, A.
Powiązania:
https://bibliotekanauki.pl/articles/1807757.pdf
Data publikacji:
2009-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
42.25.Hz
42.25.-p
42.70.-a
42.82.-m
42.82.Et
68.35.Ct
Opis:
The paper quotes the results of investigations concerning planar optical waveguides with a high value of the refractive index, achieved basing on a broad-band gap semiconductor ZnO, deposited on glass or quartz substrates. The investigations were focused on the properties of the waveguides, determining the modal characteristics, the attenuation coefficient and the structure of the surface.
Źródło:
Acta Physica Polonica A; 2009, 116, 3; 414-418
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
ZnO Thin Films Deposited on Sapphire by High Vacuum High Temperature Sputtering
Autorzy:
Borysiewicz, M. A.
Pasternak, I.
Dynowska, E.
Jakieła, R.
Kolkovski, V.
Dużyńska, A.
Kamińska, E.
Piotrowska, A.
Powiązania:
https://bibliotekanauki.pl/articles/2048109.pdf
Data publikacji:
2011-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.05.Dz
81.15.Cd
61.05.cp
68.37.Hk
68.37.Ps
68.49.Sf
78.55.Et
Opis:
ZnO (0001) layers on sapphire (0001) substrates were fabricated by means of high temperature high vacuum magnetron sputtering. The layers were deposited onto a thin MgO buffer and a low temperature ZnO nucleation layer, which is a technology commonly used in MBE ZnO growth. This paper reports on using this technology in the sputtering regime.
Źródło:
Acta Physica Polonica A; 2011, 119, 5; 686-688
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electronic Properties of Thin HfO$\text{}_{2}$ Films Fabricated by Atomic Layer Deposition on 4H-SiC
Autorzy:
Taube, A.
Gierałtowska, S.
Gutt, T.
Małachowski, T.
Pasternak, I.
Wojciechowski, T.
Rzodkiewicz, W.
Sawicki, M.
Piotrowska, A.
Powiązania:
https://bibliotekanauki.pl/articles/2048120.pdf
Data publikacji:
2011-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
77.55.dj
77.22.Jp
73.40.Qv
81.15.Gh
Opis:
Applicability of thin HfO$\text{}_{2}$ films as gate dielectric for SiC MOSFET transistor is reported. Layers characterisation was done by means of atomic force microscopy and scanning electron microscopy, spectroscopic ellipsometry and C-V and I-V measurements of MIS structures. High permittivity dielectric layers were deposited using atomic layer deposition. Investigation showed high value of κ = 15 and existence of high density surface states (5 × 10$\text{}^{12}$ eV$\text{}^{-1}$ cm$\text{}^{-2}$) on HfO$\text{}_{2}$/SiC interface. High leakage current is caused probably due to low conduction band offset between hafnium oxide and silicon carbide.
Źródło:
Acta Physica Polonica A; 2011, 119, 5; 696-698
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The Influence of Humidity on the Resistance Structures with Graphene Sensor Layer
Autorzy:
Pustelny, T.
Setkiewicz, M.
Drewniak, S.
Maciak, E.
Stolarczyk, A.
Procek, M.
Urbańczyk, M.
Gut, K.
Opilski, Z.
Pasternak, I.
Strupinski, W.
Powiązania:
https://bibliotekanauki.pl/articles/1418032.pdf
Data publikacji:
2012-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
07.07.Df
42.81.Pa
82.47.Rs
Opis:
In the paper the results of investigations are presented concerning the influence of humidity of air on the resistance of a gas sensor structure with a graphene layer. The affects of nitrogen dioxide and humidity action on graphene were studied. We indicated that humidity might play an important role in determining the gas sensing properties of the graphene layer. In the paper it has been shown that in the case of a nitrogen oxide sensor, the reaction of $NO_2$ with water vapour can generate permanent defects in graphene.
Źródło:
Acta Physica Polonica A; 2012, 122, 5; 870-873
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Planar Optical Waveguides for Application in Optoelectronic Gas Sensors
Autorzy:
Golaszewska, K.
Kamińska, E.
Pustelny, T.
Struk, P.
Piotrowski, T.
Piotrowska, A.
Ekielski, M.
Kruszka, R.
Wzorek, M.
Borysiewicz, M.
Pasternak, I.
Gut, K.
Powiązania:
https://bibliotekanauki.pl/articles/1811559.pdf
Data publikacji:
2008-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
42.82.Et
07.07.Df
42.79.Pw
81.15.-z
Opis:
In the paper, the results of technological investigations on planar optical waveguides based on high band gap oxide semiconductors were presented. Investigations concerned the technologies of depositing very thin layers of: zinc oxide ZnO, titanium dioxide $TiO_2$ and tin dioxide $SnO_2$ on substrates of quartz glass plates. There were investigated both morphological structures of the produced layers and their optical properties. The paper also presents investigations on the technology of input-output light systems in the Bragg grating structures.
Źródło:
Acta Physica Polonica A; 2008, 114, 6A; A-223-A-230
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Morphology and Selected Properties of Core/Shell ZnTe-Based Nanowire Structures Containing ZnO
Autorzy:
Gas, K.
Janik, E.
Zaleszczyk, W.
Pasternak, I.
Dynowska, E.
Fronc, K.
Kolkovsky, V.
Kret, S.
Morhange, J. F.
Reszka, A.
Wiater, M.
Caliebe, W.
Karczewski, G.
Kowalski, B. J.
Szuszkiewicz, W.
Wojtowicz, T.
Powiązania:
https://bibliotekanauki.pl/articles/2047950.pdf
Data publikacji:
2011-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.37.Hk
68.37.Lp
68.65.La
81.07.Vb
Opis:
We report on an approach to fabricate ZnTe-based core/shell radial heterostructures containing ZnO, as well as on some of their physical properties. The molecular beam epitaxy grown ZnTe nanowires constituted the core of the investigated structures and the ZnO shells were obtained by thermal oxidation of ZnTe NWs. The influence of the parameters characterizing the oxidation process on selected properties of core/shell NWs were examined. Scanning electron microscopy revealed changes of the NWs morphology for various conditions of the oxidation process. X-ray diffraction, high resolution transmission electron microscopy, and Raman scattering measurements were applied to reveal the presence of ZnTe single crystal core and polycrystalline ZnO-shell of investigated structure.
Źródło:
Acta Physica Polonica A; 2011, 119, 5; 612-614
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-10 z 10

    Ta witryna wykorzystuje pliki cookies do przechowywania informacji na Twoim komputerze. Pliki cookies stosujemy w celu świadczenia usług na najwyższym poziomie, w tym w sposób dostosowany do indywidualnych potrzeb. Korzystanie z witryny bez zmiany ustawień dotyczących cookies oznacza, że będą one zamieszczane w Twoim komputerze. W każdym momencie możesz dokonać zmiany ustawień dotyczących cookies