Informacja

Drogi użytkowniku, aplikacja do prawidłowego działania wymaga obsługi JavaScript. Proszę włącz obsługę JavaScript w Twojej przeglądarce.

Wyszukujesz frazę "HV" wg kryterium: Wszystkie pola


Tytuł:
RKKY-Reminiscent Interaction in Net Fractals
Autorzy:
Jaroszewicz, R.
Powiązania:
https://bibliotekanauki.pl/articles/1810564.pdf
Data publikacji:
2009-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.43.Hv
75.30.Hx
Opis:
We define a specific class of fractals as "net fractals" and prove that in the logarithmic scale they are isomorphic with some bulk crystals. Furthermore, with the use of logarithmic coordinates, we prove that in the "net fractal" magnetic system the indirect exchange, by itinerant electrons can be presented in the form that is reminiscent of the Ruderman-Kittel-Kasuya-Yosida interaction characteristic of a system of fractional spectral dimension.
Źródło:
Acta Physica Polonica A; 2009, 115, 1; 329-331
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
A New Methodology to Disambiguate Privacy
Autorzy:
Alhalafi, D.
Powiązania:
https://bibliotekanauki.pl/articles/1402373.pdf
Data publikacji:
2015-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
01.50.hv
89.20.Ff
Opis:
This paper addresses the pragmatic and semantic meaning of the term privacy by establishing a new method methodology of proceeding pragmatic, semantic and conceptual or combinations instances of privacy in relation to technology. The analysis of construct definition based on information published in the literature, for example Dictionaries are investigated under various conditions, for example semiotics. The new hybrid-privacy method is lexica-technical that investigates chronological definition of terms in relation to technology in distributed systems (DS); the method also looks at the impact of technological advancement on a particular innovation, polythematic or progress in pragmatic, semantic and conceptual characteristics of perception of privacy. The method's use is verified in an analysis of the unique meanings that underlie the term's usage both as a single word and in combination such as privacy law, privacy attack, privacy breach, and so forth. Literal (denotative) definitions and metaphoric (connotative) associations are examined to explain the use of privacy to refer to a physical entity and/or a mental representation, conceptual and perception. The method is also tentatively grounded in the disciplines of philology, cognition, information technology, and the philosophy of science. The lexica-technical analysis method is applied to the meanings of privacy starting with its original usage in the twenty first century and culminating with the definitions used by authors, IT developers and peoples in this paper. Finally, the paper aims at proposing a pragmatic, semantic and conceptual framework for measuring privacy. In this, technically introducing an extra button on the keyboard to indicate; whatever typed next is private to establish new link between cognition and neuron-computation systems.
Źródło:
Acta Physica Polonica A; 2015, 128, 2B; B-319-B-323
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Fracton Excitations in the Magnetic "Net Fractal" Systems
Autorzy:
Bąk, Z.
Powiązania:
https://bibliotekanauki.pl/articles/1813878.pdf
Data publikacji:
2008-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.43.Hv
75.30.Ds
Opis:
A localized spin system of fractal symmetry and Heisenberg exchange between nearest neighbors is considered. We define a specific class of fractals: "net fractals" and prove that in the logarithmic scale they are isomorphic with some bulk crystals. Further, with the use of logarithmic coordinates we show that the "net fractal" magnetic fractons can be presented as the conventional magnons.
Źródło:
Acta Physica Polonica A; 2008, 113, 1; 541-544
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Studies on Vuv Lasing with Neon-Like Aluminum Ions
Autorzy:
Rahmani, B.
Powiązania:
https://bibliotekanauki.pl/articles/1968879.pdf
Data publikacji:
1998-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
42.55.Lt
52.20.Hv
Opis:
The collisional-radiative equilibrium model has been developed in order to investigate the population inversion on aluminum plasma. The population inversion has been established between lower 3s ($\text{}^{3}$P$\text{}_{1}^{0}$,$\text{}^{1}$P$\text{}_{1}^{0}$) and upper 3p ($\text{}^{3}$P$\text{}_{0}$,$\text{}^{1}$S$\text{}_{0}$) levels. The vacuum ultra-violet lasing on neon-like aluminum ions provides wavelengths of 111.9 nm, 143.2 nm, 157.3 nm. The rate of relative density population, between lower 3s $\text{}^{1}$P$\text{}_{1}^{0}$ and upper 3p $\text{}^{3}$P$\text{}_{0}$ levels, reaches its highest value of 7.16 at the electron density of 10$\text{}^{19}$ cm$\text{}^{-3}$. The modified expression of optical escape factor, in the case of Doppler profile, was introduced in the calculation of opacity effect on the gain magnitudes. The resonance radiation trapping by 3d configuration alters drastically the gain values. A gain greater than 1 cm$\text{}^{-1}$ was found between lasing levels 3s $\text{}^{3}$P$\text{}_{1}^{0}$ and 3p $\text{}^{3}$P$\text{}_{0}$. The enhancement of gain was due to the pumping of the upper level by dielectronic recombination process from the ground state of fluorine-like and by the inner-shell ionization process from excited levels of sodium-like ions.
Źródło:
Acta Physica Polonica A; 1998, 93, 4; 631-641
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Roughness Method to Estimate Fractal Dimension
Autorzy:
Błachowski, A.
Ruebenbauer, K.
Powiązania:
https://bibliotekanauki.pl/articles/1808085.pdf
Data publikacji:
2009-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
05.45.Df
61.43.Hv
Opis:
A method based on the pattern roughness was introduced for determination of the fractal dimension and tested for fractals like the Sierpiński carpet, the Sierpiński triangle, standard Cantor set, the Menger sponge and the Sierpiński tetrahedron. It was tested for non-fractal pattern like two- and four-dimensional gray scale random dust as well. It was found that for all these patterns the Hausdorff dimension is reproduced with relatively high accuracy. Roughness method is based on simple, fast and easy to implement algorithm applicable in any topological dimension. It is particularly suited for patterns being composed of the hierarchy of structures having the same topological dimension as the space embedding them. It is applicable to "fuzzy" patterns with overlapping structures, where other methods are useless. It is designed for pixelized structures, the latter structures resulting as typical experimental data sets.
Źródło:
Acta Physica Polonica A; 2009, 115, 3; 636-640
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Study of Misfit Dislocations Profiles in ZnSe/GaAs Structures by Raman Scattering
Autorzy:
Bała, W.
Drozdowski, M.
Kozielski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1929718.pdf
Data publikacji:
1993-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.30.Hv
Opis:
In this paper we present the Raman scattering measurements of the ZnSe epilayers grown on (001) GaAs substrate by molecular beam epitaxy method. We have studied dependence of the frequency shift of LO(ZnSe) mode in the Raman spectra vs. thickness of the ZnSe layer. The intensity of LO(ZnSe)/LO(GaAs) ratio vs. orientation angle α of the E vector of the exciting light on the ZnSe/GaAs interface relatively to the sample orientation is presented too.
Źródło:
Acta Physica Polonica A; 1993, 84, 4; 689-692
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
H⁺ Scattering in n-Butanol
Autorzy:
Nikitović, Ž.
Raspopović, Z.
Stojanović, V.
Powiązania:
https://bibliotekanauki.pl/articles/1032572.pdf
Data publikacji:
2017-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
51.10.+y
52.20.Hv
52.65.Pp
Opis:
In this paper we show predictions for the low energy cross-sections and transport properties for the H⁺ in n-butanol gas. These data are needed for modelling in numerous technologically important applications. Appropriate gas phase enthalpies of formation for the products were used to calculate scattering cross-section as a function of kinetic energy. Calculated cross-sections can be used to obtain transport parameters as a function of E/N (E - electric field, N - gas density) for H⁺ in n-butanol gas.
Źródło:
Acta Physica Polonica A; 2017, 132, 4; 1420-1423
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Harmonic generation analyses of memristor with different barriers and neuron
Autorzy:
Babacan, Y.
Kacar, F.
Powiązania:
https://bibliotekanauki.pl/articles/1068338.pdf
Data publikacji:
2016-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
85.40.Bh
85.25.Hv
Opis:
We investigated the Fourier transform of memristor with various barriers and neuristor. To provide the different barriers we present a simple adaptive model dependent on input signal. We saw that there was no significant change of the harmonics with increasing barriers. Neurons provide an energy and area efficient and could be used in neuromorphic circuits. We used a neuron circuit that can be efficient to provide second and higher harmonics. Neuron circuit generates various spike shapes like regular spike, fast spike, initial bursting, chattering, etc. In this paper we analysed the Fourier transform of the most common spike shapes. The neuron or neuristor can be more efficient to generate second and higher harmonics compared to the other standard circuits.
Źródło:
Acta Physica Polonica A; 2016, 130, 1; 226-227
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Some Aspects of Solid State Radioluminescence
Autorzy:
Wojtowicz, A. J.
Powiązania:
https://bibliotekanauki.pl/articles/1994522.pdf
Data publikacji:
1999-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.60.Ya
78.30.Hv
78.60.Kn
29.40.Mc
Opis:
In this paper we review results of radioluminescence studies on two scintillator materials, LuAlO$\text{}_{3}$ and YAlO$\text{}_{3}$, activated with Ce. The experiments include measurements of ther moluminescence, isothermal phosphorescence decays, scintillation light yield as function of temperature, and scintillation time profiles under gamma excitation. Experimental results are interpreted in the frame of a simple kinetic model that includes a number of electron traps. We have identified and characterized a number of deep and shallow traps and demonstrated that traps in LuAlO$\text{}_{3}$:Ce are deeper than corresponding traps in YAlO$\text{}_{3}$:Ce. Unlike deep traps which are responsible for some scintillation light loss but otherwise do not have any impact on generation of scintillation light, shallow traps are shown to actively interfere with the process of radiative recombination via Ce ions. We demonstrate that shallow traps are responsible for some as yet unexplained observations including a higher room temperature light yield of YAlO$\text{}_{3}$:Ce and its longer scintillation decay time, as well as a longer scintillation rise time in LuAlO$\text{}_{3}$:Ce.
Źródło:
Acta Physica Polonica A; 1999, 95, 1; 165-178
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electrical Resistivity of CrN Thin Films
Autorzy:
Batko, I.
Batkova, M.
Lofaj, F.
Powiązania:
https://bibliotekanauki.pl/articles/1372678.pdf
Data publikacji:
2014-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.80.Ga
72.20.Ee
78.30.Hv
Opis:
The work is focused on the measurements of electrical resistivity of CrN thin films deposited on glass substrates by DC-magnetron sputtering in Ar+$N_{2}$ atmosphere. The studied samples reveal semiconducting behaviour of electrical resistivity in the whole range of tested preparation parameters (such as pressure and composition of Ar-$N_{2}$ mixture), whereas the electrical transport regime is strongly influenced by parameters of preparation. Numerical analysis of the experimental data showed that electrical transport can be adequately described in terms of variable-range hopping conduction in selected temperature intervals. Moreover, S-shaped anomaly in ρ(T) dependence, being expected to be a consequence of phase transition to a low-temperature antiferromagnetic orthorhombic phase, has been observed for sample with the highest concentration of $N_{2}$ in the temperature interval of 220-250 K. The obtained results indicate that technology processes typically used for preparation of CrN coatings represent a promising potential to develop also high sensitivity cryogenic sensors for high magnetic fields applications.
Źródło:
Acta Physica Polonica A; 2014, 126, 1; 415-416
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Exciton Electroluminescence of ZnSe/ZnO Structures under Biaxial Stress
Autorzy:
Bała, W.
Firszt, F.
Łęgowski, S.
Męczyńska, H.
Powiązania:
https://bibliotekanauki.pl/articles/1924234.pdf
Data publikacji:
1992-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.30.Hv
61.70.Wp
Opis:
The strained ZnSe/ZnO structures grown on (111) ZnSe crystals by plasma oxidation was investigated by electro- and photoluminescence methods. The lines of heavy and light hole excitons under biaxial compressive stress are measured as a function of the temperature.
Źródło:
Acta Physica Polonica A; 1992, 82, 5; 896-899
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Cross-section and transport parameters of Ne⁺ in CF₄
Autorzy:
Nikitović, Ž.
Stojanović, V.
Raspopović, Z.
Powiązania:
https://bibliotekanauki.pl/articles/1058180.pdf
Data publikacji:
2016-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
51.10.+y
52.20.Hv
52.65.Pp
Opis:
A cross-section set for scattering Ne⁺ ions in CF₄ is assessed by using available experimental data for charge transfer cross-sections. In this paper we present new results for the mean energy, reduced mobility and diffusion coefficients for low and moderate reduced electric fields E/N (N - gas density) and account for the non-conservative collisions. The Monte Carlo method is used to calculate transport properties of Ne⁺ ions in CF₄ at temperature of T=300 K.
Źródło:
Acta Physica Polonica A; 2016, 130, 6; 1343-1345
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Characterization of the Band Bending in ZnSe-GaAs Heterojunctions by Raman Scattering
Autorzy:
Bała, W.
Drozdowski, M.
Kozielski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1879935.pdf
Data publikacji:
1991-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.30.Hv
61.70.Wp
Opis:
The band bending effect at the ZnSe-GaAs interface Was studied by means of Raman scattering induced by electric-field related to longitudinal-optical (LO) phonons. It has been shown that the variation of the band bending in GaAs can be modifled by changes in the electron concentration of ZnSe epilayer and the variation of the sample temperature.
Źródło:
Acta Physica Polonica A; 1991, 79, 2-3; 225-228
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Transport Coefficients in Mixtures $Ar//H_2$
Autorzy:
Nikitović, Ž.
Stojanović, V.
Powiązania:
https://bibliotekanauki.pl/articles/1400294.pdf
Data publikacji:
2013-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
51.10.+y
52.20.Hv
52.65.Pp
52.77.-j
Opis:
In this work we present electron transport coefficients for electrons in $Ar//H_2$ mixtures for the conditions used in plasma assisted technologies for semiconductor production i.e. in moderate to very high reduced electric field E/N (E - electric field, N - gas density). We used a two term numerical solution of the Boltzmann equation at the lowest E/N and mean energies and also Monte Carlo simulation technique at moderate and high E/N. We show that a good agreement with experimental data exists for low and moderate E/N and that based on the tests for pure $H_2$ and Ar we can model properly the high E/N development. Results were obtained for abundances of $H_2$ from 1% to 50%. Such data are required to test the sets of cross-section data which are necessary in kinetic models for this mixture and also to produce transport coefficients for fluid models. Hydrogen is used for etching of organic compounds, most importantly low k dielectrics, at the same time argon as a buffer gas is added to control the mean energy and distribution function. Besides, operation at high E/N allows the generation of fast neutrals for charging free etching on nanometer scales.
Źródło:
Acta Physica Polonica A; 2013, 123, 1; 73-75
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Investigation of the Strains at ZnSe/GaAs Interfaces by Raman Scattering
Autorzy:
Bała, W.
Drozdowski, M.
Kozielski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1891888.pdf
Data publikacji:
1991-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.30.Hv
61.70.Wp
Opis:
Investigations of the strains at the n-ZnSe epilayers grown on GaAs substrate using polarized Raman spectra are presented. It has been shown that Raman scattering experiment can be used as a method for investigation of the splitting between the heavy- and light-hole bands in n-ZnSe thin films.
Źródło:
Acta Physica Polonica A; 1991, 80, 5; 723-730
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł

Ta witryna wykorzystuje pliki cookies do przechowywania informacji na Twoim komputerze. Pliki cookies stosujemy w celu świadczenia usług na najwyższym poziomie, w tym w sposób dostosowany do indywidualnych potrzeb. Korzystanie z witryny bez zmiany ustawień dotyczących cookies oznacza, że będą one zamieszczane w Twoim komputerze. W każdym momencie możesz dokonać zmiany ustawień dotyczących cookies