Wszystkie pola: Bauer, I. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: High Resolution X-ray Reciprocal Space Mapping
Autorzy:: Bauer, G.
Li, J. H.
Holy, V.
Powiązania:: https://bibliotekanauki.pl/articles/1943985.pdf
Data publikacji:: 1996-02
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.10.-i
68.55.-a
61.72.Lk
Opis:: A survey will be given on recent advances in the investigation of semiconductor epilayers, heterostructures and superlattices using reciprocal space mapping techniques based on triple-axis diffractometry. It is shown that X-ray reciprocal space mapping yields quantitative information on strain, strain relaxation, as well as composition in such structures. These data are obtained from analyses of the isointensity contours of scattered X-ray intensity around reciprocal lattice points. Further analysis of the diffuse scattering yields also information on defect distribution in the epilayers.
Źródło:: Acta Physica Polonica A; 1996, 89, 2; 115-127
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Investigation of Morphology and Chemical Composition of Self-Organized Semiconductor Quantum Dots and Wires by X-Ray Scattering
Autorzy:: Holý, V.
Meduňa, M.
Stangl, J.
Roch, T.
Bauer, G.
Powiązania:: https://bibliotekanauki.pl/articles/2030767.pdf
Data publikacji:: 2002-07
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.10.-i
61.10.Dp
Opis:: X-ray scattering methods suitable for the investigation of the morphology and chemical composition of self-organized quantum dots and quantum wires are reviewed. Their application is demonstrated in experimental examples showing that a combination of small angle X-ray scattering with high-resolution X-ray diffraction can reveal both the shape and the chemical composition of the self-organized objects.
Źródło:: Acta Physica Polonica A; 2002, 102, 1; 7-19
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Quest for Band Renormalization and Self-Energy in Correlated f-Electron Systems
Autorzy:: Durakiewicz, T.
Riseborough, P.
Batista, C.
Yang, Y.
Oppeneer, P.
Joyce, J.
Bauer, E.
Graham, K.
Powiązania:: https://bibliotekanauki.pl/articles/1538778.pdf
Data publikacji:: 2010-02
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 79.60.-i
71.28.+d
74.25.Jb
Opis:: Coexisting low-energy scales are observed in f-electron materials. The information about some of low-energy scales is imprinted in the electron self-energy, which can be measured by angle-resolved photoemission (ARPES). Such measurements in d-electron materials over the last decade were based on high energy- and momentum- resolution ARPES techniques used to extract the self-energy information from measured spectra. Simultaneously, many-body theoretical approaches have been developed to find a link between the self-energy and many-body interactions. Here we show the transcription of such methods from d-electrons to f-electrons by presenting the first example of low energy scales in the f-electron material $USb_2$, measured with synchrotron-based ARPES. The proposed approach will help in answering the fundamental questions about the complex nature of the heavy fermion state.
Źródło:: Acta Physica Polonica A; 2010, 117, 2; 264-267
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 4.

Tytuł:: High Resolution X-Ray Diffraction Investigations of Si/SiGe Quantum Well Structures and Si/Ge Short-Period Superlattices
Autorzy:: Bauer, G.
Koppensteiner, E.
Hamberger, P.
Nützel, J.
Abstreiter, G.
Kibbel, H.
Presting, H.
Kasper, E.
Powiązania:: https://bibliotekanauki.pl/articles/1929613.pdf
Data publikacji:: 1993-09
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 68.65.+g
61.10.-i
68.55.Jk
Opis:: Double crystal and triple axis X-ray diffractometry was used to characterize the structural properties of Si/Si$\text{}_{1-x}$Ge$\text{}_{x}$ multiquantum well samples grown pseudomorphically on Si(001) substrates, as well as of short-period Si$\text{}_{9}$Ge$\text{}_{6}$ superlattices grown by molecular beam epitaxy on rather thick step-graded Si$\text{}_{1-x}$Ge$\text{}_{x}$ (0 < x < 0.4, 650 nm thick) buffers followed by 550 nm Si$\text{}_{0.6}$ Ge$\text{}_{0.4}$ layers. Reciprocal space maps around the (004) and (224) reciprocal lattice points yield direct information on the strain status of the layers in the heterostructure systems and in particular on the amount of strain relaxation.
Źródło:: Acta Physica Polonica A; 1993, 84, 3; 475-489
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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