Informacja

Drogi użytkowniku, aplikacja do prawidłowego działania wymaga obsługi JavaScript. Proszę włącz obsługę JavaScript w Twojej przeglądarce.

English (EN)·Polski (PL)·Yкраїнський (UK)
Przejdź do strony domowej biblioteki Centralna Biblioteka Wojskowa Link otwiera się w nowym oknie Logo biblioteki Prolib Integro - strona głównaCentralna Biblioteka Wojskowa

Wyszukujesz frazę "(j)" wg kryterium: Wszystkie pola

  Lista filtrów
Wyrównaj
Wyświetlanie 1-15 z 3618
Tytuł:
Infrared Detectors - New Trends
Autorzy:
Piotrowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/1872382.pdf
Data publikacji:
1995-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.30.-j
Opis:
Recent trends in infrared detectors are towards large, electronically addressed two-dimensional arrays and higher operating temperature. This will lead both to higher performance and to smaller, lighter and more affordable IR systems. Cooling requirements are the main obstacle to the more widespread use of infrared systems based on semiconductor photodetectors, particularly in the civil field. Fundamental limitations to performance of IR photodetectors are due to the statistical nature of generation-recombination processes and resulting noise. Ways to overcome the limitations are discussed including use of the optical immersion and optical resonant cavity. Finally, the progress in a mode of operation is presented, in which the thermal generation of carriers is suppressed by the use of stationary depletion of narrow gap semiconductors. The practical near room temperature narrow gap semiconductor photodetectors are reported. Competitive technologies based on Schottky barrier devices and low dimensional solids are considered briefly.
Źródło:
Acta Physica Polonica A; 1995, 87, 2; 303-316
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Study of Si(111) Implanted with As Ions by X-Ray Diffraction and Grazing Incidence Methods
Autorzy:
Pełka, J. B.
Górecka, J.
Auleytner, J.
Domagała, J.
Bąk-Misiuk, J.
Powiązania:
https://bibliotekanauki.pl/articles/1964119.pdf
Data publikacji:
1997-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.Ln
68.55.Jk
Opis:
The Si(111) wafer cut from a bulk single crystal obtained by the Czochralski method was implanted with 5×10$\text{}^{16}$ I cm$\text{}^{-2}$ of As ions of energy 80 keV. The dose applied was chosen above the amorphization limit of the silicon substrate. Two samples, implanted and a reference, were studied by grazing incidence X-ray reflectometry and X-ray diffraction methods using a high resolution Philips MRD system equipped with a Cu source and a channel-cut monochromator. The obtained spectra were compared with distributions of ion range and defect production calculated with TRIM program [1], as well as with theoretical models of reflectivity [2, 3]. The results of grazing incidence X-ray reflectometry reflectivity of the implanted sample show well-pronounced oscillations, which can be associated with a layer about 50 nm thick, approximately comparable to the thickness of the defected layer estimated from the TRIM method. Theoretical calculations of reflectivity clearly indicate an occurrence of a Si layer of electron density lower about 10-15% comparing to the unimplanted Si sample. This can be due to the vacancy production during ion implantation. A comparison of the spectra with a density distribution profile concluded from the TRIM calculations shows large discrepancies. The results indicate the applicability of grazing incidence X-ray reflectometry method in a study of amorphization processes in implanted layers.
Źródło:
Acta Physica Polonica A; 1997, 91, 5; 905-910
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Photoemission Study of the Initial Growth of Co on Ru(0001)
Autorzy:
Godowski, P. J.
Onsgaard, J. J.
Trzebiatowska-Gusowska, M. J.
Pater, K. J.
Li, Zhe
Powiązania:
https://bibliotekanauki.pl/articles/2047268.pdf
Data publikacji:
2007-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
79.60.Dp
79.60.Jv
68.55.Jk
Opis:
The growth process of cobalt on Ru(0001) was characterized by photoelectron spectroscopy excited by X-ray and synchrotron radiation. The binding energy position and intensity of the Co 2p$\text{}_{3}\text{}_{/}\text{}_{2}$ and Ru 3d$\text{}_{5}\text{}_{/}\text{}_{2}$ core levels as well as the shape and structure of the valence band spectra corresponding to the different stages of the deposition were investigated. An observed small positive binding energy shift is a consequence of an increase in the cobalt adatoms coordination number. The core-level shift between bulk and surface Ru atoms is determined as -360 meV. Upon adsorption of cobalt, the interface peak appears with a shift of -(70÷80) meV relative to the bulk one. On the basis of unchanged energy positions and widths of the Ru-derived features of the valence band spectra, a weak interaction between cobalt and substrate is suggested. The measured valence band could be reproduced by superimposing the spectra of the pure elements.
Źródło:
Acta Physica Polonica A; 2007, 111, 2; 263-271
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electronic States and Structure of Dibenzo[j,lm]-phenanthro[5,4,3-abcd]perylene
Autorzy:
Marczyk, J.
Waluk, J.
Fetzer, J.
Powiązania:
https://bibliotekanauki.pl/articles/1933561.pdf
Data publikacji:
1995-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
07.65.-b
33.20.-t
33.10.-n
Opis:
Electronic absorption and emission, fluorescence anisotropy and linear dichroism techniques were applied to dibenzo[j, lm]phenanthro[5,4,3-abcd]perylene in order to determine its electronic structure and check the possibility of existence of conformational isomers. The results indicate the presence of only one conformer. Its structure is proposed on the basis of the experimental data as well as molecular mechanics and quantum chemical calculations.
Źródło:
Acta Physica Polonica A; 1995, 88, 2; 295-304
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Magnetic Order in TbPdIn
Autorzy:
Javorský, P.
Fikáček, J.
Prokleška, J.
Nishigori, S.
McIntyre, G.
Powiązania:
https://bibliotekanauki.pl/articles/1534255.pdf
Data publikacji:
2010-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.05.fm
75.25.-j
Opis:
The magnetic structure in TbPdIn was investigated by neutron diffraction experiments. The results reveal a long-range magnetic structure with propagation vector (0,0,0) and the Tb moments forming a non-collinear structure within the basal plane that is unchanged over the whole temperature region below the ordering temperature of 66 K.
Źródło:
Acta Physica Polonica A; 2010, 118, 5; 879-880
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Magnetism in TmCo₂
Autorzy:
Šebesta, J.
Prchal, J.
Valenta, J.
Kratochvílová, M.
Sechovský, V.
Powiązania:
https://bibliotekanauki.pl/articles/1385702.pdf
Data publikacji:
2015-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.20.En
75.50.Gg
71.70.Gm
Opis:
Recently a new wave of interest in physics of RCo₂ compounds has been boosted by reports on unusual magnetic short range order configurations in the heavy rare-earth RCo₂ ferrimagnets in paramagnetic state. The newly observed phenomenon called parimagnetism consists in a short-range antiferromagnetic coupling between small ferromagnetic Co clusters and the nearest rare-earth moments. This paper is devoted to results of our experimental investigation of carefully prepared and characterized samples of TmCo₂, a compound on which controversial results can be found in literature. Detailed magnetization, AC susceptibility, specific heat and electrical resistivity measurements revealed two magnetic phase transitions at 4.6 and 3.6 K, respectively. The anomalies connected with the transitions are strongly dependent on magnetic field and hydrostatic pressure. The AC susceptibility anomaly connected with the onset of parimagnetism has been found at $T_{f}$=35 K. Contrary to other heavy rare-earth RCo₂ counterparts $T_{f}$ of TmCo₂ is entirely pressure independent.
Źródło:
Acta Physica Polonica A; 2015, 127, 2; 379-381
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
MBE Growth and Properties of GaMnAs(100) Films
Autorzy:
Sadowski, J.
Domagała, J.
Bąk- Misiuk, J.
Świątek, K.
Kanski, J.
Ilver, L.
Oscarsson, H.
Powiązania:
https://bibliotekanauki.pl/articles/1992165.pdf
Data publikacji:
1998-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Hi
79.60.Bm
71.55.Eq
Opis:
We present here the results of measurements of structural and electronic properties of GaMnAs - a new diluted magnetic semiconductor system. This ternary III-V-Mn compound with the Mn content as high as 7% was obtained for the first time (by means of molecular beam epitaxial growth) by Ohno, Munekata et al. and the studies of its properties are not completed until now. We did the high resolution X-ray diffraction investigations and photoemission measurements of the samples with Mn content varied from about 0.1% up to 5%. The crystalline perfection of the ternary GaMnAs compound is very high - full width at half maximum of GaMnAs (400) Bragg reflections are of order of 50 arcseconds and the layers are fully strained to the GaAs(100) substrate. In photoemission experiments we traced the contribution of Mn 3d states to the band structure of GaMnAs ternary compound.
Źródło:
Acta Physica Polonica A; 1998, 94, 3; 509-513
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Raman Characterization of MBE-Grown Layered MnTe/CdTe Structures
Autorzy:
Szuszkiewicz, W.
Jouanne, M.
Morhange, J.
Kanehisa, M. A.
Mariette, H.
Hartmann, J. M.
Dynowska, E.
Karczewski, G.
Wojtowicz, T.
Kossut, J.
Barnaś, J.
Powiązania:
https://bibliotekanauki.pl/articles/1968435.pdf
Data publikacji:
1997-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.30.Ds
78.30.-j
75.70.Ak
Opis:
Raman scattering measurements on (MnTe)$\text{}_{8}$/(Cd$\text{}_{0.64}$Zn$\text{}_{0.36}$Te)$\text{}_{8}$ multilayer grown by MBE method and on various (MnTe)$\text{}_{n}$/(CdTe)$\text{}_{12}$ multilayers (where n=8,12,16,24) were performed at low temperatures. In the z̅(x,x)z polarization, structures corresponding to folded acoustic phonons were found. In z̅(x,y)z polarization new complex structures were observed in the low-frequency part of Raman scattering spectra. A possible magnetic origin of these structures is discussed.
Źródło:
Acta Physica Polonica A; 1997, 92, 5; 1021-1024
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
J$\text{}_{1}$-J$\text{}_{2}$-J$\text{}_{3}$ Model with Long-Range Lieb-Mattis Interaction
Autorzy:
Krüger, S. E.
Richter, J.
Powiązania:
https://bibliotekanauki.pl/articles/1955533.pdf
Data publikacji:
1997-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.10.Jm
Opis:
Stimulated by the two-dimensional frustrated Heisenberg antiferromagnet with first-, second-, and third-neighbor couplings (J$\text{}_{1}$-J$\text{}_{2}$-J$\text{}_{3}$ model) we consider a corresponding three-parameter model with a long-range antiferromagnetic Lieb-Mattis interaction. This model can be solved exactly and leads to a better understanding of the role of frustration in the J$\text{}_{1}$-J$\text{}_{2}$-J$\text{}_{3}$ model. We calculate the correlations in the groundstate and consider their finite size behavior. Furthermore we present the full thermodynamic phase diagram. We find the possibility of a disordered phase at T=0.
Źródło:
Acta Physica Polonica A; 1997, 91, 2; 377-380
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electronic Structure of $PrCo_2Ge_2$
Autorzy:
Diviš, M.
Vejpravová, J.
Rusz, J.
Prokleška, J.
Sechovský, V.
Powiązania:
https://bibliotekanauki.pl/articles/1813659.pdf
Data publikacji:
2008-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.15.Mb
71.70.Ch
Opis:
The intermetallic compound $PrCo_2Ge_2$ exhibits very interesting physical properties: antiferromagnetism below $T_N$ = 28 K, an order to order transition at $T_R$ = 8 K, a rich magnetic phase diagram, and huge magnetocrystalline anisotropy as observed by recent experiments on a single crystal in a magnetic field up to 14 T. We performed first principles calculations based on the density functional theory. The localized $4f^2$ configuration of $Pr^{3+}$ was treated using the open core approximation. The electronic densities of states were obtained and the position of the Fermi level was found. The hybridization between the Co-3d, Pr-5d and Ge-4p states is discussed. The calculated magnetic moment of Co is found to be quite small $(m_{Co} < 0.1 μ_B)$. The first principles calculations of the crystal field interaction were performed as well: the obtained crystal field parameters were used as the starting parameters for further refinement in comparison with experimental data of the magnetic susceptibility and specific heat. The crystal field splitting of the 4f states was determined.
Źródło:
Acta Physica Polonica A; 2008, 113, 1; 295-298
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Oxygen Precipitation in Si:O Annealed under High Hydrostatic Pressure
Autorzy:
Misiuk, A.
Bąk-Misiuk, J.
Bryja, L.
Kątcki, J.
Ratajczak, J.
Jun, J.
Surma, B.
Powiązania:
https://bibliotekanauki.pl/articles/2030659.pdf
Data publikacji:
2002-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.10.-i
61.72.Yx
81.40.Vw
Opis:
Effect of hydrostatic pressure up to 1.2 GPa on oxygen-implanted silicon, Si:O (O$\text{}^{+}$ dose, D, within the 6×10$\text{}^{17}$-2×10$\text{}^{18}$ cm$\text{}^{-2}$ range), treated at 1230-1570 K, was investigated by X-ray, transmission electron microscopy and photoluminescence methods. The pressure treatment affects oxygen precipitation and defect creation, especially in low oxygen dose implanted Si:O (D=6×10$\text{}^{17}$ cm$\text{}^{-2}$). Such investigation helps in understanding the stress related phenomena in Si wafers with buried insulating layer.
Źródło:
Acta Physica Polonica A; 2002, 101, 5; 719-727
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Pulsed Laser Evaporation and Epitaxy
Autorzy:
Dubowski, J.J.
Powiązania:
https://bibliotekanauki.pl/articles/1888083.pdf
Data publikacji:
1991-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.-a
78.65.Fa
Opis:
The application of pulsed lasers for vaporization (ablation) of solid targets appears to be the most natural way to produce high purity fluxes of atoms/ions suitable for epitaxial growth of thin films. Since the early 1960's this unique approach has been the subject of steadily growing interest in the deposition of metals, dielectrics, semiconductors and since 1987, high-T$\text{}_{c}$ superconductors. Laser induced target surface morphology changes, properties of laser induced vapours and pulsed deposition rate associated with the use of a pulsed laser for vacuum epitaxy are discussed. A pulsed laser evaporation and epitaxy (PLEE) system is described and the results of PLEE application for the growth of Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te and CdTe-Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te quantum well and superlattice structures are reviewed. Feasibility of PLEE in bandgap engineering is also discussed.
Źródło:
Acta Physica Polonica A; 1991, 80, 2; 221-244
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Changes of GaP: N Defect Structure under Hydrostatic Pressure
Autorzy:
Bąk-Misiuk, J.
Domagała, J.
Kozankiewicz, B.
Misiuk, A.
Adamczewska, J.
Skibska, M.
Powiązania:
https://bibliotekanauki.pl/articles/1924323.pdf
Data publikacji:
1993-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
65.70.+y
Opis:
The changes of defect structure of GaP:N epitaxial layers subjected to hydrostatic pressures up to 1.8 GPa are investigated by X-ray diffraction and photoluminescence. The observed changes are more pronounced at higher pressures and depend on the nitrogen concentration, c$\text{}_{N}$, and on initial defect structure. Especially complex hydrostatic pressure induced properties are observed for the sample with c$\text{}_{N}$ > 10$\text{}^{20}$ at. cm$\text{}^{-3}$. The model explaining the hydrostatic pressure induced defect structure changes is proposed.
Źródło:
Acta Physica Polonica A; 1993, 83, 1; 87-93
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Characterization of the Liquid Crystal Display Modulation. Optimization for Some Applications
Autorzy:
Campos, J.
Márquez, A.
Nicolás, J.
Moreno, I.
Iemmi, C.
Davis, J. A.
Yzuel, M. J.
Powiązania:
https://bibliotekanauki.pl/articles/2030321.pdf
Data publikacji:
2002-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
42.79.Kr
42.79.Hp
42.25.Ja
Opis:
In this paper we revise recent results of our team in the optimization of twisted nematic liquid crystal displays to be used as spatial light modulators for image processing and diffractive optics. In general two kind of responses are desired for the mentioned applications: amplitude-only and phase-only modulations. However, it is not a trivial task to find the polarization configurations for which these responses are obtained. We show that a reverse-engineering approach is needed to optimize the liquid crystal display response. According to this reverse-engineering approach the modulation characteristics can be calibrated by evaluating the modulation response in a few polarization configurations. These results are used to fit the liquid crystal display behavior to a simplified physical model, which uses two modulation parameters. We demonstrate that the degree of accuracy of this model is very high, thus enabling the prediction of the modulation behavior of the display at other polarization configurations. Therefore, we can perform computer searches for the optimum orientation of the polarizing elements to obtain the required optical transmission. We demonstrate the need to use short wavelengths and the need to insert wave plates in front and behind the liquid crystal displays to obtain either amplitude-only or phase-only regime.
Źródło:
Acta Physica Polonica A; 2002, 101, 1; 189-200
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Orientation of Single Dibenzanthanthrene Molecules in Solid Xenon
Autorzy:
Sepioł, J.
Kołos, R.
Jasny, J.
Powiązania:
https://bibliotekanauki.pl/articles/1814017.pdf
Data publikacji:
2007-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
33.50.-j
61.66.Bi
61.66.Hq
61.72.Ww
Opis:
The spatial distributions of individual dibenzanthanthrene electronic transition dipole moments in solid Xe was investigated at the single molecule level, with the high-resolution fluorescence spectroscopy. Samples were prepared by the co-deposition of dibenzanthanthrene/Xe vapours onto the 50 K surface. The results indicate that the orientation of planar aromatic molecules is preferentially parallel to the trapping surface.
Źródło:
Acta Physica Polonica A; 2007, 112, S; S-121-S-126
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 3618

Ta witryna wykorzystuje pliki cookies do przechowywania informacji na Twoim komputerze. Pliki cookies stosujemy w celu świadczenia usług na najwyższym poziomie, w tym w sposób dostosowany do indywidualnych potrzeb. Korzystanie z witryny bez zmiany ustawień dotyczących cookies oznacza, że będą one zamieszczane w Twoim komputerze. W każdym momencie możesz dokonać zmiany ustawień dotyczących cookies