Informacja

Drogi użytkowniku, aplikacja do prawidłowego działania wymaga obsługi JavaScript. Proszę włącz obsługę JavaScript w Twojej przeglądarce.

English (EN)·Polski (PL)·Yкраїнський (UK)
Przejdź do strony domowej biblioteki Centralna Biblioteka Wojskowa Link otwiera się w nowym oknie Logo biblioteki Prolib Integro - strona głównaCentralna Biblioteka Wojskowa

Wyszukujesz frazę "Silicon substrate" wg kryterium: Temat

  Lista filtrów
Wyrównaj
    Wyświetlanie 1-4 z 4
    Tytuł:
    SOI Technology: An Opportunity for RF Designers?
    Autorzy:
    Raskin, J.-P.
    Powiązania:
    https://bibliotekanauki.pl/articles/308241.pdf
    Data publikacji:
    2009
    Wydawca:
    Instytut Łączności - Państwowy Instytut Badawczy
    Tematy:
    crosstalk
    high resistivity silicon substrate
    MOSFET
    nonlinearities
    silicon-on-insulator
    wideband characterization
    Opis:
    This last decade silicon-on-insulator (SOI) MOS-FET technology has demonstrated its potentialities for high frequency (reaching cutoff frequencies close to 500 GHz for n-MOSFETs) and for harsh environments (high temperature, radiation) commercial applications. For RF and system-onchip applications, SOI also presents the major advantage of providing high resistivity substrate capabilities, leading to substantially reduced substrate losses. Substrate resistivity values higher than 1 k? cm can easily be achieved and high resistivity silicon (HRS) is commonly foreseen as a promising substrate for radio frequency integrated circuits (RFIC) and mixed signal applications. In this paper, based on several experimental and simulation results the interest, limitations but also possible future improvements of the SOI MOS technology are presented.
    Źródło:
    Journal of Telecommunications and Information Technology; 2009, 4; 3-17
    1509-4553
    1899-8852
    Pojawia się w:
    Journal of Telecommunications and Information Technology
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    The Effect of Silicon Orientation on Thickness and Chemical Bonding Configuration of SiOxNy Thin Films
    Autorzy:
    Ismael, M. M.
    Powiązania:
    https://bibliotekanauki.pl/articles/412157.pdf
    Data publikacji:
    2013
    Wydawca:
    Przedsiębiorstwo Wydawnictw Naukowych Darwin / Scientific Publishing House DARWIN
    Tematy:
    Glass assisted CO2 laser
    Silicon substrate
    SiOxNy Thin Film
    Opis:
    Fourier Transform Infrared (FTIR) Spectroscopy and Capacitance-Voltage measurements are used to characterize the chemical bonding configuration and crystallographic orientations for SiOxNy thin films grown by glass assisted CO2 laser. FTIR spectra detected the Si-O and Si-N strongest absorption bands are close to each other at wave number in the range (700-1000 cm-1) depending on silicon substrates, and Si-O stretching bond at wave number around (~1088.285 cm-1) with a FWHM of 73.863 cm-1 for the two samples, the presences of hydrogen impurities like Si-H and N-H in the films were also identified and calculated. From C-V measurement film thickness were calculated and found to be 19.2 and 17.2 nm for SiOxNy/Si(111) and SiOxNy/Si(100) respectively. From the flat band voltage of -5.4 and -1.3 measured the two samples, their interface trap densities were found to be 1.4 × 1013 and 1.57 × 1013 ev-1•cm-2 respectively.
    Źródło:
    International Letters of Chemistry, Physics and Astronomy; 2013, 14; 1-9
    2299-3843
    Pojawia się w:
    International Letters of Chemistry, Physics and Astronomy
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Wpływ stosowania krzemianu potasu na wzrost, plonowanie i zdrowotność roślin pomidora ‘Growdena F1’ uprawianego na uprzednio użytkowanym substracie
    The influence of application of potassium silicate on growth, fruit yield, and healthiness of ‘Growdena F1’ tomato plants grown in reused peat substrate
    Autorzy:
    Borkowski, J.
    Murgrabia, A.
    Dyki, B.
    Kowalczyk, W.
    Felczyńska, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/2119571.pdf
    Data publikacji:
    2019
    Wydawca:
    Instytut Ogrodnictwa
    Tematy:
    tomato
    reused peat substrate
    silicon response
    Opis:
    The aim of the study was to examine reproductive and vegetative responses of ‘Growdena F1’ tomatoes (Solanum lycopersicum L.) to use of potassium silicate fertilizer (as Silvit 15.0% SiO3) into reused peat substrate. Investigations were carried out at a greenhouse in 2013 and 2014. Tomatoes were treated with potassium silicate 2 times: immediately after tomato planting and a month later, at a rate of 0.11 g silicon (Si) per plant per year. Potassium silicate was applied as 1% water solution during plant irrigation. In each term, 200 ml Silvit of Si-containing solution per plant was applied. Plants unsupplied with potassium silicate serves as the control. The results showed that application of potassium silicate was able to improve tomato root healthiness, but only in the second year of the study, when the presence of pathogens in the tested substrate was high. The increases in marketable and total fruit yields as a result of use of potassium silicate was found only in 2014. It is concluded that at high multiplication of root pathogens in the substrate, the application of Sicontaining fertilizers do not protect sufficiently roots against infection.
    Źródło:
    Zeszyty Naukowe Instytutu Ogrodnictwa; 2019, 27; 73-78
    2300-5882
    2391-8969
    Pojawia się w:
    Zeszyty Naukowe Instytutu Ogrodnictwa
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Special size effects in advanced single-gate and multiple-gate SOI transistors
    Autorzy:
    Ohata, A.
    Ritzenthaler, R.
    Faynot, O.
    Cristoloveanu, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/308994.pdf
    Data publikacji:
    2007
    Wydawca:
    Instytut Łączności - Państwowy Instytut Badawczy
    Tematy:
    MOSFET
    SOI
    ultra-thin silicon
    multiple-gate
    mobility
    coupling effect
    thin gate oxide
    gate-induced floating body effect
    drain-induced virtual substrate biasing
    Opis:
    State-of-the-art SOI transistors require a very small body. This paper examines the effects of body thinning and thin-gate oxide in SOI MOSFETs on their electrical characteristics. In particular, the influence of film thickness on the interface coupling and carrier mobility is discussed. Due to coupling, the separation between the front and back channels is difficult in ultra-thin SOI MOSFETs. The implementation of the front-gate split C-V method and its limitations for determining the front- and back-channel mobility are described. The mobility in the front channel is smaller than that in the back channel due to additional Coulomb scattering. We also discuss the 3D coupling effects that occur in FinFETs with triple-gate and omega-gate configurations. In low-doped or tall fins the corner effect is suppressed. Narrow devices are virtually immune to substrate effects due to a strong lateral coupling between the two lateral sides of the gate. Short-channel effects are drastically reduced when the lateral coupling screens the drain influence.
    Źródło:
    Journal of Telecommunications and Information Technology; 2007, 2; 14-24
    1509-4553
    1899-8852
    Pojawia się w:
    Journal of Telecommunications and Information Technology
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-4 z 4

      Ta witryna wykorzystuje pliki cookies do przechowywania informacji na Twoim komputerze. Pliki cookies stosujemy w celu świadczenia usług na najwyższym poziomie, w tym w sposób dostosowany do indywidualnych potrzeb. Korzystanie z witryny bez zmiany ustawień dotyczących cookies oznacza, że będą one zamieszczane w Twoim komputerze. W każdym momencie możesz dokonać zmiany ustawień dotyczących cookies