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    Wyświetlanie 1-9 z 9
    Tytuł:
    Investigation of Crystal Growth of SrPrGaO$\text{}_{4}$ and SrLaGaO$\text{}_{4}$
    Autorzy:
    Uecker, R.
    Reiche, P.
    Ganschow, S.
    Uecker, D.-C.
    Schultze, D.
    Powiązania:
    https://bibliotekanauki.pl/articles/1964229.pdf
    Data publikacji:
    1997-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.30.Dz
    81.10.Fq
    81.05.Je
    Opis:
    Single crystals of SrPrGaO$\text{}_{4}$ and SrLaGaO$\text{}_{4}$ have been grown using the Czochralski technique. Both materials melt incongruently at 1462°C and 1516°C. The non-stoichiometric crystals contain more strontium than the starting melts. Constitutional supercooling is retarded by special growth conditions and optimum melt composition. Because of their small mismatch both crystals are recommended as substrates for YBa$\text{}_{2}$Cu$\text{}_{3}$O$\text{}_{7-x}$ epitaxy.
    Źródło:
    Acta Physica Polonica A; 1997, 92, 1; 23-34
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    On the Critical Behaviour and Phase Diagram of Ising-like Metamagnet in a Transverse Field
    Autorzy:
    Lukierska-Walasek, K.
    Powiązania:
    https://bibliotekanauki.pl/articles/1930584.pdf
    Data publikacji:
    1994-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    75.30.Kz
    81.30.Dz
    05.70.Fh
    Opis:
    The quantum Ising-like metamagnet in a field Γ perpendicular to the easy direction in the mean field approximation is investigated. The conditions for the existence of critical and tricritical points have been analyzed. The result is illustrated by an appropriate plot in three-dimensional space of the following parameters: the temperature, Γ, and field parallel to the easy direction.
    Źródło:
    Acta Physica Polonica A; 1994, 85, 2; 381-384
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Influence of Pressure on the Size of Free Volumes in Some Waxes
    Autorzy:
    Zgardzińska, B.
    Gorgol, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1196483.pdf
    Data publikacji:
    2014-03
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.70.Bj
    81.30.Dz
    74.62.Fj
    Opis:
    Positron lifetime spectra were measured as a function of pressure for multicomponent mixtures of alkanes with an average carbon chain length of 19 atoms, and a varying width of length distribution. The range of rotator phase broadens with increasing the wax component distribution. When the number of wax components was five or more, we have observed the coexistence of rotator-rigid phases. The results of analysis of high statistics positron annihilation lifetime spectra by MELT program speaks in favour of an existence (in that range) of a single broad component, rather than two components corresponding to the separate rigid and rotator phases. In the mixtures of alkanes, the inter-lamellar gap size increases significantly due to the presence of various chain lengths of the components forming the mixture. For all investigated waxes the pressure of 360 MPa was sufficient to reduce the gap width to that one observed in pure alkanes.
    Źródło:
    Acta Physica Polonica A; 2014, 125, 3; 816-820
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Characterization of n-ZnO/p-GaN Heterojunction for Optoelectronic Applications
    Autorzy:
    Wachnicki, L.
    Gieraltowska, S.
    Witkowski, B.
    Figge, S.
    Hommel, D.
    Guziewicz, E.
    Godlewski, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1399138.pdf
    Data publikacji:
    2013-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    85.30.Kk
    61.05.cp
    81.05.Dz
    Opis:
    An important feature of zinc oxide and gallium nitride materials are their similar physical properties. This allows to use them as a p-n junction materials for applications in optoelectronics. In earlier work we presented use of ZnO as a transparent contact to GaN, which may improve external efficiency of LED devices. In this work we discuss properties of a n-ZnO/p-GaN heterostructure and discuss its optimization. The heterostructure is investigated by us for possible applications, e.g. in a new generation of UV LEDs or UV light detectors.
    Źródło:
    Acta Physica Polonica A; 2013, 124, 5; 869-872
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Electrical Characterization of Defects in Schottky Au-CdTe:Ga Diodes
    Autorzy:
    Dyba, P.
    Płaczek-Popko, E.
    Zielony, E.
    Gumienny, Z.
    Szatkowski, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1791359.pdf
    Data publikacji:
    2009-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.05.Dz
    85.30.De
    84.37.+q
    Opis:
    Deep electron states in gallium doped CdTe have been studied by deep-level transient spectroscopy method. The Schottky Au-CdTe diodes were processed to perform the investigations. Rectifying properties of diodes have been examined by the room temperature current-voltage and capacitance-voltage measurements. Deep-level transient spectroscopy measurements performed in the range of temperatures 77-350 K yield the presence of three electron traps. The thermal activation energies and apparent capture cross-sections have been determined from related Arrhenius plots. The dominant trap of activation energy $E_2$ = 0.33 eV and capture cross-section σ_2 = 3 × $10^{-15} cm^2$ has been assigned to the gallium related DX center present in the CdTe material.
    Źródło:
    Acta Physica Polonica A; 2009, 116, 5; 944-946
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Raman Scattering from ZnSe Nanolayers
    Autorzy:
    Nesheva, D.
    Šćepanović, M.
    Aškrabić, S.
    Levi, Z.
    Bineva, I.
    Popović, Z.
    Powiązania:
    https://bibliotekanauki.pl/articles/1807824.pdf
    Data publikacji:
    2009-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.15.Ef
    81.05.Dz
    78.30.-j
    68.55.-a
    Opis:
    A series of ZnSe single layers having thickness between 30 nm and 1 μm was deposited on c-Si and glass substrates at room substrate temperature. Thermal evaporation of ZnSe powder in high vacuum has been applied. Moreover, $SiO_x$/ZnSe periodic multilayers prepared by the same deposition technique and having ZnSe layer thickness of 2 and 4 nm have been studied. Raman spectra were measured at 295 K, using the 442 nm line of a He-Cd laser as well as different lines of the $Ar^+$ or $Ar^+//Kr^+$ lasers. The observed Raman features have been related to multiple optical phonon (1LO to 4LO) light scattering and connected with the existence of randomly oriented crystalline ZnSe grains in both ZnSe single layers and ZnSe layers of the multilayers. Relatively large line width ( ≈ 15 $cm^{-1}$) of the 1LO band has been observed and related to lattice distortion in the crystalline grains and existence of amorphous phase in the layers thinner than 100 nm. The Raman spectra measured on both ZnSe single layers and $SiO_x$/ZnSe multilayers using the 488 nm line with a gradually increased laser beam power indicate an increased crystallinity at high irradiation levels.
    Źródło:
    Acta Physica Polonica A; 2009, 116, 1; 75-77
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Impedance Spectroscopy of Au-CdTe:Ga Schottky Contacts
    Autorzy:
    Płaczek-Popko, E.
    Trzmiel, J.
    Gumienny, Z.
    Wojtyna, E.
    Szatkowski, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1811971.pdf
    Data publikacji:
    2008-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.05.Dz
    85.30.De
    84.37.+q
    Opis:
    The dielectric response of Au-CdTe gallium doped Schottky contacts was investigated by impedance spectroscopy in the frequency range from 0.2 Hz to 3 MHz, at temperatures in the range from 77 K to 300 K. Combined modulus and impedance spectroscopic plots were analyzed to study the response of the structure. The data were fitted with the simple RC circuit composed of a depletion layer capacitance in parallel with resistance and a series resistance of the bulk CdTe:Ga. The activation energy of the bulk trap obtained from the Arrhenius plot of the resistance was found to be equal to 0.08 eV, close to the value 0.09 eV obtained from the impedance-modulus spectroscopy. The trap dominant in CdTe:Ga is possibly the DX center related, as it has been observed that this is the dominant trap in the material.
    Źródło:
    Acta Physica Polonica A; 2008, 114, 5; 1279-1283
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Investigation of Tin Oxide Based Nanocomposites for Li-Ion Batteries
    Autorzy:
    Cevher, O.
    Cetinkaya, T.
    Tocoglu, U.
    Guler, M.
    Akbulut, H.
    Powiązania:
    https://bibliotekanauki.pl/articles/1399889.pdf
    Data publikacji:
    2013-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    88.30.rh
    81.05.Dz
    81.15.Cd
    82.47.Aa
    Opis:
    In this work, tin oxide ($SnO_2$) films were deposited on multiwall carbon nanotube buckypaper using a rf magnetron sputter process in a mixed oxygen/argon (1/9) gas environment. Conditions for the growth of $SnO_2$ thin films on multiwall carbon nanotube buckypaper by rf sputtering are: target composition $SnO_2$ (99.999 wt%); total system pressure 1 Pa; sputtering power (rf) 75, 100 and 125 W, respectively; $O_2//Ar$ (1/9) gas mixture. The surface morphology of the $SnO_2$ multiwall carbon nanotube composite films was investigated by scanning electron microscopy. The crystallographic structure of the sample was determined by X-ray diffraction. The electrochemical properties of $SnO_2$ multiwall carbon nanotube composite anodes were investigated by galvanostatic charge-discharge experiments.
    Źródło:
    Acta Physica Polonica A; 2013, 123, 2; 358-360
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Characterization of ZnSe Nanolayers by Spectroscopic Ellipsometry
    Autorzy:
    Šćepanović, M.
    Grujić-Brojčin, M.
    Nesheva, D.
    Levi, Z.
    Bineva, I.
    Popović, Z.
    Powiązania:
    https://bibliotekanauki.pl/articles/1795712.pdf
    Data publikacji:
    2009-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.07.-b
    81.15.-z
    81.05.Dz
    78.30.-j
    07.60.Fs
    68.55.-a
    Opis:
    Single layers of ZnSe with thicknesses of 30, 40, 50, 70 and 100 nm are deposited at room substrate temperature by thermal evaporation of ZnSe powder in vacuum. The layers surface morphology has been investigated by atomic force microscopy. Structural characterization by the Raman scattering measurement revealed the existence of randomly oriented crystalline ZnSe particles in all layers, and the presence of amorphous phase in layers thinner than 100 nm. The ellipsometric measurements were performed in the range from 1.5 to 5 eV at room temperature in air. To interpret the experimental results, the Bruggeman effective medium approximation of dielectric function of ZnSe layers has been used, representing the layers as different mixtures of crystalline ZnSe (c-ZnSe), amorphous ZnSe (a-ZnSe), and voids. The assumption of polycrystalline ZnSe layers modeled as mixture of porous c-ZnSe (with volume fraction of voids ≈ 0.17) and a-ZnSe gives the best fit of ellipsometric experimental data. Single layer thicknesses similar to those expected from preparation conditions have been obtained by this fitting procedure. It has been also found that decrease in the layer thickness causes an increase of the volume fraction of a-ZnSe. Thus, c-ZnSe/a-ZnSe ratio, porosity and layer thickness obtained by spectroscopic ellipsometry, provides useful information about crystallinity and micro-/nanostructure of ZnSe nanolayers.
    Źródło:
    Acta Physica Polonica A; 2009, 116, 4; 708-711
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-9 z 9

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