- Tytuł:
- Bychkov-Rashba Effect and g-Factor Tuning in Modulation Doped SiGe Quantum Wells
- Autorzy:
-
Malissa, H.
Jantsch, W.
Mühlberger, M.
Schäffler, F.
Wilamowski, Z.
Draxler, M.
Bauer, P. - Powiązania:
- https://bibliotekanauki.pl/articles/2038126.pdf
- Data publikacji:
- 2004-06
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
73.21.Fg
85.75.-d - Opis:
- We investigate the spin resonance of electrons in one-sided modulation doped Si$\text{}_{1-x}$Ge$\text{}_{x}$ (x=0-10%)) quantum wells defined by Si$\text{}_{0.75}$Ge$\text{}_{0.25}$ barriers. In such structures, the Bychkov-Rashba effect induces an effective magnetic field in the quantum well layer which causes anisotropy of both the g-factor and the spin coherence time. Evaluation of the Rashba coefficient as a function of x yields a monotonic increase. For x=5% the shift in the resonance field exceeds the ESR linewidth already, demonstrating the possibility to use this effect for g-factor tuning to select individual spins in an ensemble.
- Źródło:
-
Acta Physica Polonica A; 2004, 105, 6; 585-590
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł