Temat: vertical-cavity surface-emitting laser - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: A simple and precise method for the threshold current determination in vertical-cavity surface-emitting lasers
Autorzy:: Pruszyńska-Karbownik, Emilia
Gębski, Marcin
Marciniak, Magdalena
Lott, James A.
Czyszanowski, Tomasz
Powiązania:: https://bibliotekanauki.pl/articles/174774.pdf
Data publikacji:: 2020
Wydawca:: Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
Tematy:: VCSEL
vertical-cavity surface-emitting laser
threshold current
spontaneous emission
Opis:: In this paper, we present experimental results of spontaneous emission clamping in the threshold for vertical-cavity surface-emitting lasers (VCSELs) with oxide current confinement. We show that the spontaneous emission not wholly clamps in the threshold. We propose a new method for determining the threshold current value using the study of the clamping phenomena. This method has an advantage over the commonly used methods in the accuracy because the current of the spontaneous emission clamping is betted defined than the current of the slope change of the stimulated emission light-current curve. The estimated uncertainty of the method is no more than 20 μA.
Źródło:: Optica Applicata; 2020, 50, 2; 281-288
0078-5466
1899-7015
Pojawia się w:: Optica Applicata
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Impact of the active area position in a nitride tunnel junction vertical-cavity surface-emitting laser on its emission characteristics
Autorzy:: Śpiewak, Patrycja
Wasiak, Michał
Sarzała, Robert P.
Powiązania:: https://bibliotekanauki.pl/articles/173286.pdf
Data publikacji:: 2020
Wydawca:: Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
Tematy:: GaN
computer simulations
tunnel junction
VCSEL
vertical-cavity surface-emitting laser
Opis:: This paper presents results of numerical simulations of a nitride semiconductor vertical-cavity surface-emitting laser (VCSEL) with a tunnel junction. The modeled laser is based on a structure created at the University of California in Santa Barbara. The analysis concerns the impact of the position of laser’s active area on the emitted power. Both small detunings from the standing waveanti-node, and positioning of the active area at different anti-nodes are considered.
Źródło:: Optica Applicata; 2020, 50, 2; 301-310
0078-5466
1899-7015
Pojawia się w:: Optica Applicata
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: 100G shortwave wavelength division multiplexing solutions for multimode fiber data links
Autorzy:: Cimoli, B.
Estaran Tolosa, J. M.
Rodes Lopez, G. A.
Vegas Olmos, J. J.
Monroy, I. T.
Powiązania:: https://bibliotekanauki.pl/articles/173811.pdf
Data publikacji:: 2016
Wydawca:: Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
Tematy:: vertical-cavity surface-emitting laser (VCSEL)
multimode fiber
MMF
wavelength division multiplexing
WDM
Opis:: We investigate an alternative 100G solution for optical short-range data center links. The presented solution adopts wavelength division multiplexing technology to transmit four channels of 25G over a multimode fiber. A comparative performance analysis of the wavelength-grid selection for the wavelength division multiplexing data link is reported. The analysis includes transmissions over standard optical multimode fiber (OM): OM2, OM3 and OM4.
Źródło:: Optica Applicata; 2016, 46, 3; 409-419
0078-5466
1899-7015
Pojawia się w:: Optica Applicata
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 4.

Tytuł:: Numerical model of a semiconductor disk laser
Autorzy:: Sokół, A. K.
Sarzała, R. P.
Powiązania:: https://bibliotekanauki.pl/articles/174528.pdf
Data publikacji:: 2016
Wydawca:: Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
Tematy:: semiconductor disk laser
SDL
vertical-external-cavity surface-emitting laser
VECSEL
computer simulation
numerical modelling
Opis:: In this paper we describe the numerical model of a semiconductor disk laser, developed and implemented in the Photonics Group, Institute of Physics, Lodz University of Technology, Poland. It consists of four strongly interrelated components for: carrier transport, heat flow, material gain and optical phenomena calculations. Combination of these components gives the steady-state self-consistent model which enables a simulation of various aspects of a semiconductor disk laser operation. A numerical analysis of carrier and power losses within the active region of 1.3-μm GaInNAs/GaAs semiconductor disk laser has been carried out using this model.
Źródło:: Optica Applicata; 2016, 46, 2; 199-211
0078-5466
1899-7015
Pojawia się w:: Optica Applicata
Dostawca treści:: Biblioteka Nauki

Artykuł

Informacja