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Tytuł:
Optical Properties of Al$\text{}_{x}$Ga$\text{}_{1-x}$As$\text{}_{y}$Sb$\text{}_{1-y}$ Epitaxial Layers
Autorzy:
Świątek, K.
Piskorski, M.
Piotrowski, T. T.
Powiązania:
https://bibliotekanauki.pl/articles/1952715.pdf
Data publikacji:
1996-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Cr
78.66.Fd
Opis:
Photoluminescence spectra of Al$\text{}_{x}$Ga$\text{}_{1-x}$As$\text{}_{y}$Sb$\text{}_{1-y}$ layers (x = 0.2-0.5, y = 0.02-0.03) grown by liquid-phase epitaxy on GaSb substrates were studied in a wide temperature range (14-295 K). The temperature changes of energy and intensity of the layer and substrate emission were measured. Linear part of the temperature-induced energy shift of the Al$\text{}_{0.20}$Ga$\text{}_{0.80}$As$\text{}_{0.02}$Sb$\text{}_{0.98}$ band-to-band emission exhibits a slope of -0.3 meV/K and -0.45 meV/K at temperatures 150 K and 295 K, respectively.
Źródło:
Acta Physica Polonica A; 1996, 90, 5; 1100-1102
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Growth of GaN Metalorganic Chemical Vapour Deposition Layers on GaN Single Crystals
Autorzy:
Pakula, K.
Baranowski, J. M.
Stępniewski, R.
Wysmołek, A.
Grzegory, I.
Jun, J.
Porowski, S.
Sawicki, M.
Starowieyski, K.
Powiązania:
https://bibliotekanauki.pl/articles/1933937.pdf
Data publikacji:
1995-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.66.Fd
78.55.Cr
Opis:
The homoepitaxial growth of GaN layers has been achieved for the first time. Bulk GaN single crystals which have been used as a substrate have been grown from diluted solution of atomic nitrogen in the liquid gallium at 1600°C and at nitrogen pressure of about 15-20 kbar. It is shown that a terrace growth of GaN epitaxial layer has been realized. The high quality of the GaN film has been confirmed by luminescence measurements. The analysis of donor-acceptor and exciton luminescence is presented.
Źródło:
Acta Physica Polonica A; 1995, 88, 5; 861-864
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Photoluminescence in Tilted Magnetic Field of Triply Negatively Charged Excitons Hybridized with a Continuum
Autorzy:
Van Hattem, B.
Corfdir, P.
Brereton, P.
Pearce, P.
Graham, A.
Stanley, M.
Hugues, M.
Hopkinson, M.
Phillips, R.
Powiązania:
https://bibliotekanauki.pl/articles/1399086.pdf
Data publikacji:
2013-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.66.Fd
78.20.Ls
Opis:
We analyse the magneto-photoluminescence of triply negatively charged excitons coupled to a continuum of states. The excitonic complex is confined to a Stranski-Krastanow InAs/GaAs quantum dot embedded in a Schottky diode. Different orientations of the magnetic field have been investigated. A modelling of the Coulomb blockade together with the calculation of the electron Fock-Darwin spectrum has allowed us to predict the magnetic fields of anticrossing between the quantum dot energy states and the wetting layer Landau levels. Good agreement between the theoretical model and the experimental results has been obtained.
Źródło:
Acta Physica Polonica A; 2013, 124, 5; 798-800
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Effect of Epitaxial Layer Thickness on Built-in Electric Field in Region of AlGaAs/SI-GaAs Interface: A Photoreflectance Study
Autorzy:
Ochalski, T. J.
Żuk, J.
Vlasukova, L. A.
Powiązania:
https://bibliotekanauki.pl/articles/1968408.pdf
Data publikacji:
1997-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.66.Fd
78.20.-e
Opis:
We present a study of detailed line shapes of photoreflectance spectra for Al$\text{}_{0.3}$Ga$\text{}_{0.7}$ As/SI-GaAs epitaxial layers grown by MBE. All measurements were performed at 80 K under UHV conditions with a special care for the samples surface quality. A set of the photoreflectance spectra was collected for photon energies close to the GaAs and Al$\text{}_{0.3}$Ga$\text{}_{0.7}$As band gaps (E$\text{}_{0}$). The photoreflectance spectra originated in the vicinity of the Al$\text{}_{0.3}$Ga$\text{}_{0.7}$As/SI-GaAs interface were analyzed using the complex Airy function model of Franz-Keldysh oscillations. To examine the effect of the epitaxial layer thickness on parameters characterizing the interface, a step-by-step chemical etching was applied for stripping the top layers. The built-in electric field intensity, field inhomogeneity and phenomenological broadening parameter for interface regions were determined as a function of the epilayer thickness.
Źródło:
Acta Physica Polonica A; 1997, 92, 5; 935-939
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Fine Structure of the Localized Emission from GaInNAs Layers Studied by Micro-Photoluminescence
Autorzy:
Kudrawiec, R.
Latkowska, M.
Sęk, G.
Misiewicz, J.
Ibáñez, J.
Henini, M.
Hopkinson, M.
Powiązania:
https://bibliotekanauki.pl/articles/1791353.pdf
Data publikacji:
2009-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Cr
78.66.Fd
Opis:
GaInNAs bulk-like layers ( ≈ 20% In and ≈ 3% N) grown on GaAs substrate with various crystallographic orientations have been studied by micro-photoluminescence at low temperatures for a broad range of excitation conditions. In addition to photoluminescence peaks, which are associated with heavy- and light-hole free exciton recombination, a band of sharp lines was observed below the fundamental free exciton transition at low excitation. It shows that the localized emission which is typical of this alloy at low temperatures is composed of individual narrow photoluminescence lines which are associated with the recombination of single excitons. They can be localized on various local potential minima including those originating from the alloy content fluctuations and/or deep acceptor(donor)-like complexes.
Źródło:
Acta Physica Polonica A; 2009, 116, 5; 930-932
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Two-Electron Transition in Homoepitaxial GaN Layers
Autorzy:
Fiorek, A.
Baranowski, J. M.
Wysmołek, A.
Pakuła, K.
Wojdak, M.
Grzegory, I.
Porowski, S.
Powiązania:
https://bibliotekanauki.pl/articles/1968067.pdf
Data publikacji:
1997-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.66.Fd
78.55.Cr
Opis:
It is shown that the luminescence mapping is a powerful method to help identify optical transitions. Two-electron transition was identified in the homoepitaxial GaN layer by this technique. It was found that the donor and acceptor bound exciton emissions are spatially displaced and show intensity maxima at different places of the epitaxial layer. It was also found that the 3.45 eV line, suspected as "two-electron transition", follows exactly the donor bound exciton spatial distribution. Donor bound exciton recombines leaving the neutral donor in the excited 2s state. Thus, 1s-2s excitation being equal to 22 meV corresponds to 29 meV hydrogenic donor binding energy. This is the first identification of the two-electron transition in GaN.
Źródło:
Acta Physica Polonica A; 1997, 92, 4; 742-744
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Photoreflectance Studies of InGaAs/GaAs/AlGaAs Single Quantum Well Laser Structures
Autorzy:
Ochalski, T. J.
Żuk, J.
Regiński, K.
Bugajski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1992051.pdf
Data publikacji:
1998-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.66.Fd
78.20.-e
Opis:
We report on photoreflectance investigations of strained-layer In$\text{}_{0.2}$Ga$\text{}_{0.8}$As/GaAs/Al$\text{}_{0.3}$Ga$\text{}_{0.7}$As single quantum well laser structures grown by molecular beam epitaxy. All the observed photoreflectance spectral features were assigned to the e-hh transitions with Δn=0. The transition energies were determined and compared to their values calculated within the envelope function approximation. Assuming that one third of the total strain in the central In$\text{}_{0.2}$Ga$\text{}_{0.8}$As layer is relaxed by biaxial deformation of surrounding thin GaAs layers, it is possible to explain reasonably the results of our photoreflectance experiment.
Źródło:
Acta Physica Polonica A; 1998, 94, 3; 463-467
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
New Method for Studying Biaxial Deformation Effects on Optical Spectra of Quantum Wells
Autorzy:
Sosin, T. P.
Trzeciakowski, W.
Powiązania:
https://bibliotekanauki.pl/articles/1931925.pdf
Data publikacji:
1995-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.66.Fd
73.20.Dx
Opis:
The effects of large deformation were studied by preparing thin (20-30 μm) membranes with quantum-well layers on top. A small gas pressure of a few bar deforms the membrane substantially and changes the optical spectra of the quantum wells. We present the results of the photoluminescence and absorption from GaAs/AlGaAs and from InGaAs/GaAs quantum wells subjected to tensile and to compressive biaxial strain. The light-hole lines shift more than two times faster than the heavy-hole lines so that they cross under tensile strain.
Źródło:
Acta Physica Polonica A; 1995, 87, 1; 151-156
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Reflectivity Studies of Lattice Vibrations and Free Electrons in MBE Grown GaN Epitaxial Layers
Autorzy:
Iller, A.
Jantsch, W.
Marks, J.
Pastuszka, B.
Diduszko, R.
Powiązania:
https://bibliotekanauki.pl/articles/1969092.pdf
Data publikacji:
1998-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
63.20.-e
78.66.Fd
Opis:
We have observed a sharp structure with a peak at the frequency of the E$\text{}_{1}$-TO phonon in the reflectivity of GaN epitaxial layers grown by molecular beam epitaxy on Si substrates. The simulations of the reflection performed show that the observed shape can be explained by assuming both collective lattice vibrations and free carriers contributions to the dielectric function. We assumed the Lorentz oscillator to describe the contribution of the collective lattice vibrations and the Drude-Lorentz model for that of free carriers. Fitting the calculated reflectivity to the spectrum obtained experimentally allowed us to evaluate lattice and free carrier parameters.
Źródło:
Acta Physica Polonica A; 1998, 94, 2; 336-340
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Role of the Thermal Stress on the Magnetophonon Peak Structure in the Parallel Transport of the GaAs/AlGaAs Multiple Quantum Wells
Autorzy:
Tomaka, G.
Cebulski, J.
Sheregii, E. M.
Ściuk, W.
Strupiński, W.
Dobrzański, L.
Powiązania:
https://bibliotekanauki.pl/articles/1992453.pdf
Data publikacji:
1998-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.66.Fd
73.20.Dx
Opis:
The magnetophonon resonance in parallel transport of two types multiple quantum wells was studied. The transverse magnetoresistance was measured in pulsed magnetic fields up to 30 T (within temperature region from 77 to 340 K). A fine structure of magnetophonon resonance peaks which depends on temperature and does not depend on the type of multiple quantum wells, was observed. This effect could be attributed to two phenomena: contribution of barrier phonons and influence of thermostresses.
Źródło:
Acta Physica Polonica A; 1998, 94, 3; 597-602
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Dielectric Function Theory Calculations of Polaritons in GaN
Autorzy:
Korona, K. P.
Stępniewski, R. Stępniewski
Baranowski, J. M.
Powiązania:
https://bibliotekanauki.pl/articles/1968249.pdf
Data publikacji:
1997-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.66.Fd
71.36.+c
Opis:
Properties of polaritons (free excitons coupled with photons of similar energy) in gallium nitride are investigated by performing calculations based on dielectric function theory including all three excitons A, B and C (characteristic for the wurtzite structure). Moreover the excited states of excitons have been taken into account by adding Elliott's components to dielectric function. Energies, polarizabilities and damping constants of excitons are determined. It is shown that due to inter-exciton interactions the B and C excitons are strongly damped. It is estimated that the characteristic time of B to A relaxation is t$\text{}_{BA}$=1 ps. The exciton C lifetime is estimated τ$\text{}_{C}$=0.2 ps.
Źródło:
Acta Physica Polonica A; 1997, 92, 5; 867-870
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
On Second-Harmonic Generation in Nonparabolic Quantum Wells
Autorzy:
Załużny, M.
Powiązania:
https://bibliotekanauki.pl/articles/1952741.pdf
Data publikacji:
1996-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.66.Fd
42.65.Ky
Opis:
The second-harmonic generation due to the intersubband transitions in nonparabolic two-level quantum well systems is discussed theoretically taking into account the depolarization effect.
Źródło:
Acta Physica Polonica A; 1996, 90, 5; 1118-1122
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Modulation Spectroscopy of Reduced Dimensional Semiconductor Systems
Autorzy:
Pollak, F. H.
Powiązania:
https://bibliotekanauki.pl/articles/1933677.pdf
Data publikacji:
1995-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.66.-w
78.66.Fd
78.40.Fy
Opis:
This paper reviews the background of modulation spectroscopy, particularly electromodulation, presents some recent room temperature results having both fundamental and technological significance, including two-dimensional electron gas effects in modulation-doped, pseudomorphic GaAlAs/InGaAs/GaAs single quantum wells (HΕΜΤ structures), quantum well laser structures and process-induced damage in quantum dot arrays fabricated by reactive ion etching.
Źródło:
Acta Physica Polonica A; 1995, 88, 4; 581-590
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Hopping Excitons in GaInNAs - Simulation οf Micro- and Macrophotoluminescence Spectra
Autorzy:
Baranowski, M.
Latkowska, M.
Kudrawiec, R.
Misiewicz, J.
Powiązania:
https://bibliotekanauki.pl/articles/1492914.pdf
Data publikacji:
2011-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.66.Fd
78.55.Cr
78.20.Bh
Opis:
Model of hopping excitons has been applied to explain the origin of sharp lines observed in microphotoluminescence spectra of GaInNAs layers. It has been shown that shape of the micro- and macrophotoluminescence spectra results from the exciton hopping between localizing centers and this phenomenon is responsible for the observation of sharp lines in microphotoluminescence experiment. In addition, the influence of different model parameters on photoluminescence spectra and their characteristic parameters such as the Stokes shift and full width at half maximum has been investigated.
Źródło:
Acta Physica Polonica A; 2011, 120, 5; 899-901
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Infrared Lateral Photoconductivity of InGaAs Quantum Dots: the Temperature Dependence
Autorzy:
Moldavskaya, L. D.
Shashkin,, V. I.
Drozdov,, M. N.
Daniltsev, V. M.
Antonov, A. V.
Yablonsky, A. N.
Powiązania:
https://bibliotekanauki.pl/articles/2036025.pdf
Data publikacji:
2003-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.30.Fs
78.55.Cr
78.66.Fd
Opis:
We report the temperature dependence of lateral infrared photoconductivity in multilayer InGaAs/GaAs heterostructures with selectively doped quantum dots fabricated by metalorganic chemical vapor deposition. Two spectral lines of normal-inci dence intersubband photoconductivity (90 meV and 230 meV) and a line originating from interband transitions (930 meV) were observed. The photoconductivity line 230 meV is revealed up to the temperature 140 K. The long-wavelength photoconductivity line 90 meV is quenched rapidly at the temperature 30÷40 K owing to redistribution of photoexcited carriers between small and large dots. The obtained results confirm the hypothesis about bimodal distribution of quantum dot sizes.
Źródło:
Acta Physica Polonica A; 2003, 103, 6; 579-584
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 52

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