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    Wyświetlanie 1-12 z 12
    Tytuł:
    Thermal Desorption of Au from W(001) Surface
    Autorzy:
    Błaszczyszyn, R.
    Chrzanowski, J.
    Godowski, P.
    Powiązania:
    https://bibliotekanauki.pl/articles/2035647.pdf
    Data publikacji:
    2002-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.43.Vx
    68.55.Ac
    68.60.Dv
    Opis:
    Adsorption of Au on W(001) at 450 K up to multilayer structures was investigated. Temperature programmed desorption technique was used in determination of coverage dependent desorption energy (region up to one monolayer). Results were discussed in terms of competitive interactions of Au-Au and Au-W atoms. Simple procedure for prediction of faceting behavior on the interface, basing on the desorption data, was postulated. It was deduced that the Au/W(001) interface should not show faceting tendency after thermal treatment.
    Źródło:
    Acta Physica Polonica A; 2002, 102, 6; 785-794
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Variable Temperature STM/STS Investigations of Ag Nanoparticles Growth on Semiconductor Surfaces
    Autorzy:
    Suto, S.
    Czajka, R.
    Szuba, S.
    Shiwa, A.
    Winiarz, S.
    Nagashima, H.
    Kato, H.
    Yamada, T.
    Kasuya, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/2036896.pdf
    Data publikacji:
    2003
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.37.Ef
    68.47.Fg
    68.55.Ac
    Opis:
    We have investigated the growth of Ag nanoparticles deposited on Si(111), H/Si(111)-(1×1) and Bi$\text{}_{2}$Te$\text{}_{3}$ substrates using a variable temperature scanning tunneling microscopy. These substrates are different as regards the model system for cluster and islands growth at the nanometer scale. Ag was evaporated onto the sample mounted at the scanning tunneling microscopy stage in vacuum of 10$\text{}^{-10}$ Torr range during evaporation. The substrates were kept at different temperatures: -150˚C, room temperature, and 300˚C during the deposition process. In general, we have observed 3D growth mode up to several ML coverage. The density of clusters and their size were functions of the substrate's temperature during the deposition process - a higher density and a smaller size at -150˚C were in opposition to the 300˚C results - a lower density and a larger size. Low temperature depositions led to continuous layers above 10 ML coverage but the surface was covered by small Ag clusters of 1-2 nm in heights and 2-3 nm in diameters. The log-log graphs of height and projected diameter of Ag clusters revealed different slopes indicating different growth mechanisms at low and high temperatures. We obtained the value of n=0.25±0.02, typical of the so-called droplet model of cluster growth, only at 300˚C. Scanning tunneling spectroscopy measurements revealed clearly different I-V (and dI/dV vs. bias voltage) curves measured above clusters and directly above the substrate. In discussion, we compared our results to theoretically calculated density of states from other papers, finding conformity for partial density of states.
    Źródło:
    Acta Physica Polonica A; 2003, 104, 3-4; 289-302
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    STM/STS Studies of the Structural Phase Transition in the Growth of Ultra-Thin Bi Films on Si(111)
    Autorzy:
    Sadowski, J. T.
    Nagao, T.
    Saito, M.
    Oreshkin, A.
    Yaginuma, S.
    Hasegawa, S.
    Ohno, T.
    Sakurai, T.
    Powiązania:
    https://bibliotekanauki.pl/articles/2036956.pdf
    Data publikacji:
    2003
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.37.Ef
    68.47.De
    68.55.Ac
    Opis:
    Growth of thin metal films on semiconductors has been always an important subject for extensive experimental and theoretical studies. As the applicability of well-ordered nanostructures in electronic applications depends strongly on their size and distribution, it is necessary to understand the processes that govern the growth of such structures. In this paper we present the results of investigation of the room temperature growth of thin Bi film on Si(111). In our study we clarified that rotationally disordered, pseudo-cubic Bi(012) islands with uniform height of ≈13Å are formed in the initial stage of Bi film growth. With increase in the amount of bismuth on the surface, islands interconnect maintaining however their uniform height. This process is further accompanied by the unique and unexpected structural phase transition of the Bi(012) film into a hexagonal Bi(001) film.
    Źródło:
    Acta Physica Polonica A; 2003, 104, 3-4; 381-387
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Effect of Hydrostatic Pressure on Photoluminescence Spectra from Structures with Si Nanocrystals Fabricated in SiO$\text{}_{2}$ Matrix
    Autorzy:
    Zhuravlev, K.
    Tyschenko, I.
    Vandyshev, E.
    Bulytova, N.
    Misiuk, A.
    Rebohle, L.
    Skorupa, W.
    Powiązania:
    https://bibliotekanauki.pl/articles/2035528.pdf
    Data publikacji:
    2002-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.55.Ac
    73.63.Bd
    78.67.-n
    68.35.Fx
    Opis:
    The effect of hydrostatic pressure applied at high temperature on photoluminescence of Si-implanted SiO$\text{}_{2}$ films was studied. A "blue"-shift of PL spectrum from the SiO$\text{}_{2}$ films implanted with Si$\text{}^{+}$ ions to total dose of 1.2×10$\text{}^{17}$ cm$\text{}^{-2}$ with an increase in hydrostatic pressure was observed. For the films implanted with Si$\text{}^{+}$ ions to a total dose of 4.8×10$\text{}^{16}$ cm$\text{}^{-2}$ high temperature annealing under high hydrostatic pressure (12 kbar) causes a "red"-shift of photoluminescence spectrum. The "red" photoluminescence bands are attributed to Si nanocrystals while the "blue" ones are related to Si nanocrystals of reduced size or chains of silicon atoms or ≡Si-Si≡ defects. A decrease in size of Si nanocluster size occurs in result of the pressure-induced decrease in the diffusion of silicon atoms.
    Źródło:
    Acta Physica Polonica A; 2002, 102, 2; 337-344
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Adsorption Properties of the Cu(115) Surface: Basic Interfaces
    Autorzy:
    Godowski, P.
    Groso, A.
    Hoffmann, S.
    Onsgaard, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1537740.pdf
    Data publikacji:
    2010-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.43.Fg
    68.55.Ac
    61.14.Hg
    79.60.Dp
    Opis:
    The interfaces: K/Cu(115) and CO/Cu(115) have been characterized using surface sensitive techniques, including low energy electron diffraction and photoelectron spectroscopy. K adatoms show tendency to occupy the sites close to the step edges. At low temperature (near 125 K), after completion of two layers, potassium grows in 3D islands (the Stranski-Krastanov mode). At higher temperature, e.g. at room temperature, potassium introduces reconstruction of the substrate even at low coverages. Calibration of the alkali coverage, up to completion of the first layer, using the work function changes curve has been confirmed as a very convenient and precise procedure. The adsorbed state of CO at 130 K has been identified by registration of core levels obtained by the use synchrotron radiation photoelectron spectroscopy. The characteristics of the main 1s and satellite peaks have been analyzed in context of substrate geometry and compared with the ones of other copper planes. There are no indications of dissociative adsorption of CO, only residual carbon and oxygen were found after adsorbate desorption around 220 K. CO molecules show a strong tendency to "on top" adsorption in sites far from the step edges of the Cu(115) surface.
    Źródło:
    Acta Physica Polonica A; 2010, 117, 6; 928-935
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Surface Electronic Properties of Fe Nanoparticles on c(2×2)-N/Cu(001)
    Autorzy:
    Getzlaff, M.
    Bode, M.
    Wiesendanger, R.
    Powiązania:
    https://bibliotekanauki.pl/articles/2036899.pdf
    Data publikacji:
    2003
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.37.Ef
    68.55.Ac
    68.65.-k
    73.22.Dj
    81.15.Kk
    Opis:
    We prepared nanoscaled particles consisting of ferromagnetic material on a nanostructured template. This nanolithographic procedure allows to fabricate high-density magnetic nanodots in a highly ordered way. For this purpose, Fe particles were grown on the c(2×2)-N/Cu(001) surface which exhibits a checkerboard-like structure. Scanning tunneling spectroscopic measurements demonstrate that the electronic properties of the areas with deposited material are identical to clean copper. Fe nanoparticles on the reconstructed patches show a significantly different electronic behavior. These observations directly hint to a covering of iron with copper on the clean surface.
    Źródło:
    Acta Physica Polonica A; 2003, 104, 3-4; 327-335
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Amorphous Carbon Thin Films Deposited on Si and PET: Study of Interface States
    Autorzy:
    Mariazzi, S.
    Macchi, C.
    Karwasz, G. P.
    Brusa, R. S.
    Laidani, N.
    Bartali, R.
    Gottardi, G.
    Anderle, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/2043339.pdf
    Data publikacji:
    2005-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.55.Ac
    71.60.+z
    73.20.At
    78.70.Bj
    Opis:
    Thin carbon films with various thicknesses, deposited on different substrates (Si and poly-ethylene-terephthalate) at the same operating conditions in a radio frequency plasma enhanced chemical vapour deposition system were characterized by Doppler broadening spectroscopy. The films and the substrates were depth profiled by a slow positron beam. The aim of these measurements was to study the open volume structure and the interface of the films. It was found that, independently from the substrate, the films were homogeneous and exhibited the same open volume distribution. On the contrary, the effective positron diffusion length in the Si substrate was found to change with the thickness of the carbon films. This behaviour was interpreted as a change in the electric field at the carbon/silicon interface.
    Źródło:
    Acta Physica Polonica A; 2005, 107, 5; 842-847
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Direct Laser Interference Patterning: Theory and Application
    Autorzy:
    Zabila, Y.
    Perzanowski, M.
    Dobrowolska, A.
    Kąc, M.
    Polit, A.
    Marszałek, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1810273.pdf
    Data publikacji:
    2009-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.55.-a
    68.65.Ac
    Opis:
    We simulated and experimentally investigated the formation of periodic structures generated by multibeam interference patterning. The simulations at the different setup geometry show that resulting interference pattern is quasi-periodical. The calculated patterns show that the symmetries of the interference maxima depend mostly on the angles of incidence and that a wide variety of patterns can be obtained. Because of the difficulty in aligning four beams sufficiently well to avoid secondary periodicities, for testing we used a three-beam interference configuration. Atomic force microscopy images showed good correspondence between the experimental and simulated interference image, with flat islands which correspond to the destructive interference and narrow channels which correspond to the constructive interference fringes.
    Źródło:
    Acta Physica Polonica A; 2009, 115, 2; 591-593
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    AES Studies of Saturation in Surfactant Segregation Process in Co/Cu Multilayers
    Autorzy:
    Krupiński, M.
    Dobrowolska, A.
    Kąc, M.
    Polit, A.
    Zabila, Y.
    Marszałek, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1539147.pdf
    Data publikacji:
    2010-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    82.80.Pv
    68.55.-a
    68.65.Ac
    Opis:
    The chemical composition of successive layers in a Co/Cu multilayered system was studied during growth with Auger electron spectroscopy. Experiments were carried out on a sample with 10 repetitions of Co(1 nm)/Cu(2 nm) evaporated at a very low deposition rate in ultrahigh vacuum. A very small amount of Bi or Pb (0.06 nm) was deposited on each Cu film in the system. The experimental data have shown that the concentration of Bi and Pb increases with the number of deposited trilayers up to coverage corresponding to 5 trilayers. At that point the concentration of the surfactant saturated. The changes in the surfactant concentrations are described with a simple model depicting the interaction of the surfactant atoms with the system and how the evolution of the segregation processes. It allows the prediction of the saturation concentration and helps to explain the behaviour of various elements used as a surfactant. The comparison between the theoretical predictions and the experimental results is also discussed.
    Źródło:
    Acta Physica Polonica A; 2010, 117, 2; 420-422
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    XAFS Studies of the Behaviour of Bi in Co/Cu Multilayers
    Autorzy:
    Krupiński, M.
    Kąc, M.
    Polit, A.
    Zabila, Y.
    Zając, D.
    Marszałek, M.
    Kapusta, Cz.
    Dobrowolska, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1809826.pdf
    Data publikacji:
    2009-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.05.cj
    68.55.-a
    68.65.Ac
    Opis:
    The atomic environment of Bi atoms in the Co/Cu multilayered system was studied with X-ray absorption fine structure spectroscopy. Experiments were carried out on a Co(1 nm)/Cu(2 nm) system with 5 and 10 repetitions of Co/Cu evaporated with very low deposition rate in ultrahigh vacuum. A very small amount of Bi (0.06 nm) was deposited on each Cu film in the system. The X-ray absorption fine structure spectra were measured at the $BiL_3$ edge in the X-ray absorption near-edge structure and extended X-ray absorption fine structure ranges at the Beamline X1 of HASYLAB/DESY synchrotron laboratory in Hamburg. The experimental data showed different local neighbourhood of Bi, depending on the number of Co/Cu bilayer repetitions. The results are discussed in terms of the location and segregation of the Bi atoms as well as its possible oxidation ways.
    Źródło:
    Acta Physica Polonica A; 2009, 115, 2; 565-567
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    The Behaviour of Surfactants during the Growth of Co/Cu Multilayers
    Autorzy:
    Polit, A.
    Kąc, M.
    Krupiński, M.
    Samul, B.
    Zabila, Y.
    MarszaŁek, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1814035.pdf
    Data publikacji:
    2007-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    82.80.Pv
    61.10.Kw
    68.65.Ac
    68.55.Ln
    Opis:
    The $[Co(1 nm)//Cu(2 nm)]_N$ multilayers with different numbers of bilayer repetitions (N=3 and 10) were thermally evaporated on Si(100) substrates with a small amount of Bi or Pb deposited only on the first and on the second Cu layer. The chemical composition of the surface after each step of the preparation process was studied by Auger electron spectroscopy. The evolution of the Auger peaks showed the segregation of Bi and Pb surfactants. During the evaporation of the subsequent Co and Cu layers, gradual decrease in the surfactant amount on the surface was observed. No appearance of Co peak on the Cu layer, and Cu peak on the Co layer even for a coverage of a few å indicates the layer continuity. The interface roughness of the surfactant-mediated Co/Cu layers analyzed by X-ray reflectometry (when surfactant was deposited twice) was similar to the pure Co/Cu samples. However, more repetitions of surfactant, by reduction of interface roughness, improve the layer quality.
    Źródło:
    Acta Physica Polonica A; 2007, 112, 6; 1281-1287
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    LT-InGaAs Layer Grown for Near Surface SESAM Application
    Autorzy:
    Jasik, A.
    Muszalski, J.
    Kosmala, M.
    Pierściński, K.
    Powiązania:
    https://bibliotekanauki.pl/articles/1807666.pdf
    Data publikacji:
    2009-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.72.jj
    68.55.ag
    68.65.Ac
    81.15.Hi
    81.65.Rv
    Opis:
    We have developed a mode-locked diode-pumped Yb:KYW laser generating nearly band-width limited pulses as short as 101 fs using semiconductor saturable absorber mirror (SESAM). With the nonsaturable losses of 1.94% and the modulation depth of 1.48% the self-starting and stable mode-locking was observed. The nonsaturable losses are mainly related to As_{Ga}^{0}-CB transitions in InGaAs QW absorbing layer and low temperature defects. Low temperature defects are eliminated by using higher growth temperature and lower ratio of group V to group III beam equivalent pressure than typically used. The InGaAs layer was grown by molecular beam epitaxy at the temperature as high as 420°C, under the V/III ratio as low as 10. No annealing was performed.
    Źródło:
    Acta Physica Polonica A; 2009, 116, S; S-56-S-59
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-12 z 12

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