- Tytuł:
- High Resistivity AlGaAs Grown by Low Temperature MBE
- Autorzy:
-
Radomska, D.
Ratajczak, J.
Regiński, K.
Bugajski, M. - Powiązania:
- https://bibliotekanauki.pl/articles/1992076.pdf
- Data publikacji:
- 1998-09
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
- 73.61.Ey
- Opis:
- Al$\text{}_{0.3}$Ga$\text{}_{0.7}$As layers were grown by molecular beam epitaxy using substrate temperature 200-300°C, tetrameric As and two values of As/Ga+Al flux ratio i.e. 3 or 8. The post-growth annealing was performed in situ at 600°C for 20 min under As-overpressure. The samples were characterised by reflection high-energy electron diffraction, transmission electron microscope and room-temperature I-V measurements of n$\text{}^{+}$/LT grown layer /n$\text{}^{+}$ resistors. The resistivity and trap-filled limited voltage have been determined. The best layers exhibited ρ of the order of 10$\text{}^{9}$ Ω cm, were monocrystalline, uniformly precipitated and without dislocations.
- Źródło:
-
Acta Physica Polonica A; 1998, 94, 3; 492-496
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł