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Wyświetlanie 1-15 z 17
Tytuł:
Electrical Properties and Magnetoresistance of Nanogranular $SnO_2$ Films
Autorzy:
Ksenevich, V.
Dovzhenko, T.
Dorosinets, V.
Bashmakov, I.
Melnikov, A.
Wieck, A.
Powiązania:
https://bibliotekanauki.pl/articles/1813403.pdf
Data publikacji:
2008-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.43.Qt
73.50.Fq
Opis:
Magnetotransport properties of the nanogranular $SnO_2$ films were invesigated. Non-linear current-voltage (I-V) characteristics were observed at low temperatures. The temperature dependence of the resistance and non-ohmic I-V curves can be well approximated by fluctuation-induced tunnelling model, indicating importance of the contacts barriers between $SnO_2$ grains. Magnetoresistance was measured within temperature range 2-15.3 K and could be consistent with the variable-range hopping conduction mechanism due to existence of localized states on the surface of $SnO_2$ grains.
Źródło:
Acta Physica Polonica A; 2008, 113, 3; 1043-1046
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Aharonov-Bohm and Relativistic Corbino Effects in Graphene: A Comparative Study of Two Quantum Interference Phenomena
Autorzy:
Rycerz, A.
Powiązania:
https://bibliotekanauki.pl/articles/1428649.pdf
Data publikacji:
2012-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.80.Vp
73.43.Qt
73.63.-b
Opis:
This is an analytical study of magnetic fields effects on the conductance, the shot noise power, and the third charge-transfer cumulant for the Aharonov-Bohm rings and the Corbino disks in graphene. The two distinct physical mechanisms lead to very similar magnetotransport behaviors. Differences are unveiled when discussing the third-cumulant dependence on magnetic fields.
Źródło:
Acta Physica Polonica A; 2012, 121, 5-6; 1242-1245
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Zero Field Spin Splitting in GaN/AlGaN Heterostructures Probed by the Weak Antilocalization
Autorzy:
Dybko, K.
Siekacz, M.
Skierbiszewski, C.
Powiązania:
https://bibliotekanauki.pl/articles/1811927.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.70.Ej
73.43.Qt
73.20.Fz
Opis:
We present the magnetoconductivity measurements of a high mobility two-dimensional electron gas confined at GaN/AlGaN interface. The sensitive measurements of low field conductivity revealed both quantum corrections, the weak localization and antilocalization effects. It indicates the importance of the spin-orbit coupling in this wide band gap material. The analysis of the data provided the information about the temperature dependence of the dephasing time and total spin-orbit relaxation time. The conduction band spin splitting energy amounts to 0.23 meV and 0.35 meV at electron densities $2.2×10^{12} cm^{-2}$ and $5.7×10^{12} cm^{-2}, respectively.
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 1109-1113
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electron-Electron Interaction Effects in Quantum Hall Regime of GaN/AlGaN Heterostructures
Autorzy:
Siekacz, M.
Dybko, K.
Maude, D.
Potemski, M.
Knap, W.
Skierbiszewski, C.
Powiązania:
https://bibliotekanauki.pl/articles/2047676.pdf
Data publikacji:
2007-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.30.+h
73.40.-c
73.43.Qt
Opis:
We measured the activation of resistivity at quantum Hall minima in high mobility two-dimensional electron gas confined at AlGaN/GaN interface. The effective g-factor and effective mass was deduced. The electron-electron interactions modify both quantities compared to their bare band values. It is found that the influence of interactions is much more pronounced onto g-factor than effective mass. The relative spin susceptibility was also calculated and compared with available theories. The best agreement was found with the ideal two-dimensional gas model in random phase approximation.
Źródło:
Acta Physica Polonica A; 2007, 112, 2; 269-273
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
THz Double-Grating Gate Transistor Detectors in High Magnetic Fields
Autorzy:
But, D.
Dyakonova, N.
Coquillat, D.
Teppe, F.
Knap, W.
Watanabe, T.
Tanimoto, Y.
Boubanga Tombet, S.
Otsuji, T.
Powiązania:
https://bibliotekanauki.pl/articles/1409591.pdf
Data publikacji:
2012-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
07.57.Kp
85.30.Tv
73.43.Qt
Opis:
Double-grating-gate field-effect transistors have a great potential as terahertz detectors. This is because the double grating gate serves not only for carrier density tuning but also as an efficient THz radiation coupler. In this paper, we present characterization of these transistors using high magnetic fields. Low and high magnetic field data are used to determine the electron mobility and electron concentration, respectively, in different parts of the transistor channel.
Źródło:
Acta Physica Polonica A; 2012, 122, 6; 1080-1082
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Negative Magnetoresistance in the Variable-Range-Hopping Transport of Strongly Underdoped La$\text{}_{2-x}$Sr$\text{}_{x}$CuO$\text{}_{4}$
Autorzy:
Malinowski, A.
Cieplak, M. Z.
Berkowski, M.
Guha, S.
Powiązania:
https://bibliotekanauki.pl/articles/2046779.pdf
Data publikacji:
2006-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
74.72.-h
74.25.Fy
73.43.Qt
Opis:
The in-plane transport of strongly underdoped La$\text{}_{2-x}$Sr$\text{}_{x}$CuO$\text{}_{4}$ films was examined in the magnetic fields up to 14 T and in temperatures down to 1.6 K. While at high temperatures the samples display metallic-like resistivity, the low-T transport is governed by variable-range-hopping mechanism. Careful analysis shows that the temperature dependence of pre-exponential factor in Mott's variable-range-hopping law may not be neglected and that the density of states at the Fermi level can be effectively expressed as g(E-E$\text{}_{F}$)=N$\text{}_{0}$ (E-E$\text{}_{F}$)$\text{}^{p}$, with a small exponent p of the order of 0.1. In the magnetic field parallel to CuO$\text{}_{2}$ planes one of the variable-range-hopping parameter,ρ$\text{}_{0}$, increases by about 20-25%, while the other one, T$\text{}_{0}$, decreases by about 10-15%, resulting in the decrease in total resistivity. This effect may be related to the decrease of the tunneling barrier between different antiferromagnetic clusters in the presence of magnetic field.
Źródło:
Acta Physica Polonica A; 2006, 109, 4-5; 611-615
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Approximation of Electrical and Magneto Transport Properties of LSMO Thin Films
Autorzy:
Štrbík, V.
Reiffers, M.
Chromik, Š.
Španková, M.
Powiązania:
https://bibliotekanauki.pl/articles/1368199.pdf
Data publikacji:
2014-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.43.Qt
75.47.-m
75.70.-i
Opis:
We have used a three term polynomial expression to approximate electrical and magneto transport properties of epitaxial $La_{0.67}Sr_{0.33}MnO_{3}$ (LSMO) thin films in wide temperature range (2-350 K) and in magnetic field up to 9 T. The first term is determined by a low temperature (T<20 K) residual resistivity $ρ_{0}$ and this term is magnetic field independent. The second term describes the electron-electron scattering in LSMO, it shows ~ $T^{2}$ dependence of resistivity up to temperature about 160 K and depends only weakly on magnetic field. The third term, proportional to ~ $T^{4.5}$ dependence, describes a significant increase of resistivity in temperature range 160-350 K and due to its sensitivity to applied magnetic field it is possible to approximate temperature dependence of magnetorestivity below 350 K.
Źródło:
Acta Physica Polonica A; 2014, 126, 1; 210-211
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Growth and Investigation of Heterostructures Based on Multiferroic $BiFeO_3$
Autorzy:
Vengalis, B.
Devenson, J.
Oginskis, A.
Butkutė, R.
Maneikis, A.
Steikūnienė, A.
Dapkus, L.
Banys, J.
Kinka, M.
Powiązania:
https://bibliotekanauki.pl/articles/1813484.pdf
Data publikacji:
2008-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.30.+h
73.43.Qt
75.47.Lx
Opis:
We report heteroepitaxial growth of multiferroic $BiFeO_3$ thin films by RF magnetron sputtering on lattice-matched $SrTiO_3$ substrates, as well as preparation and electrical properties of the heterostructures formed by growing $BiFeO_3$ thin films on highly conductive $LaNiO_3$ films and n-Si substrates. Nonlinear and rectifying current-voltage (I-U) characteristics were revealed for the heterojunctions in a wide temperature range (T=78-300 K).
Źródło:
Acta Physica Polonica A; 2008, 113, 3; 1095-1098
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Magnetotransport Properties of $CaTi_xRu_{1-x}O_3$ (x=0, 0.07)
Autorzy:
Zorkovská, A.
Baran, A.
Feher, A.
Šebek, J.
Šantavá, E.
Bradarić, I.
Powiązania:
https://bibliotekanauki.pl/articles/1813683.pdf
Data publikacji:
2008-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
74.70.Pq
73.43.Qt
75.47.-m
Opis:
Electrical resistance, transversal magnetoresistance and the Hall effect were studied on polycrystalline $CaTi_xRu_{1-x}O_3$ (x=0, 0.07) samples using a conventional Quantum Design PPMS-9 equipment in the temperature range 2-300 K and magnetic field up to 9 T. Substantial differences were found between the two samples: (i) opposite to the metallic character of $CaRuO_3$, the substituted sample has insulating-like electrical resistance;(ii) the magnetoresistance of the substituted sample changes the sign from negative to positive values with increasing temperature. The magnetoresistance of $CaRuO_3$ is negative, the sign reversal is induced by magnetic field and only at temperatures below 15 K, such a behaviour is predicted for clustered systems;(iii) the Hall voltage in pure $CaRuO_3$ also changes sign from negative to positive values above 35 K. This temperature coincides with the observed magnetic transition temperature, indicating that the magnetic state and the carrier character interrelate.
Źródło:
Acta Physica Polonica A; 2008, 113, 1; 351-354
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Phonon-Assisted Kondo Resonance in Spin-Dependent Transport through a Quantum Dot
Autorzy:
Świrkowicz, R.
Wilczyński, M.
Barnaś, J.
Powiązania:
https://bibliotekanauki.pl/articles/1810522.pdf
Data publikacji:
2009-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.23.Hk
73.63.Kv
73.43.Qt
72.25.-b
Opis:
Effects of local vibrational modes on electron transport through a quantum dot attached to ferromagnetic electrodes are studied in the Kondo regime by the non-equilibrium Green function formalism based on the equation of motion method. Differential conductance is calculated for parallel and antiparallel configurations of the leads' magnetic moments, and well defined Kondo resonance peaks and their phonon satellites are found. The influence of a compensating magnetic field on the peak positions is also discussed.
Źródło:
Acta Physica Polonica A; 2009, 115, 1; 272-274
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Transport Properties of Disordered Graphene Layers
Autorzy:
Gryglas-Borysiewicz, M.
Jouault, B.
Tworzydło, J.
Lewińska, S.
Strupiński, W.
Baranowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/1791293.pdf
Data publikacji:
2009-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.21.Ac
72.20.Fr
73.43.Qt
73.63.Bd
Opis:
Samples consisting of a few layers of graphene obtained by thermal decomposition of SiC were studied by means of transport experiments at 4 K and in a magnetic field up to 7 T. Transport data show that the samples have a two-dimensional character. Magnetoresistance has an approximately linear character at high magnetic fields, which has been previously observed in graphite samples, and a negative magnetoresistance, at low magnetic fields. The transverse resistivity $ρ_{xy}$ is nonlinear as a function of B, which can be described using a many-carrier model.
Źródło:
Acta Physica Polonica A; 2009, 116, 5; 838-840
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Two-Probe Measurements of Electron Transport in GaN:Si/(Ga,Mn)N/GaN:Si Spin Filter Structures
Autorzy:
Kalbarczyk, K.
Foltyn, M.
Grzybowski, M.
Stefanowicz, W.
Adhikari, R.
Li, Tian
Kruszka, R.
Kamińska, E.
Piotrowska, A.
Bonanni, A.
Dietl, T.
Sawicki, M.
Powiązania:
https://bibliotekanauki.pl/articles/1398574.pdf
Data publikacji:
2016-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.25.Dc
73.40.Cg
73.43.Qt
78.55.Cr
Opis:
Results of two-probe magnetoresistance studies in GaN:Si/(Ga,Mn)N/GaN:Si prospective spin filter structures are reported. It is postulated that transport characteristics are strongly influenced by highly conductive threading dislocations and that shrinking of the device size partially mitigates the issue. Simultaneously, maxima at ≈1500 Oe on overall weak, up to 2%, negative magnetoresistance are seen at low temperature, whose origin has been tentatively assigned to effects taking place at the contacts areas.
Źródło:
Acta Physica Polonica A; 2016, 130, 5; 1196-1198
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Low Temperature Magnetic Properties of $Pr_{0.7}(Ca,Sr)_{0.3}CoO_{3}$ Oxides
Autorzy:
Deac, I.
Vlădescu, A.
Balasz, I.
Tunyagi, A.
Tetean, R.
Powiązania:
https://bibliotekanauki.pl/articles/1503539.pdf
Data publikacji:
2011-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.47.Lx
75.30.Kz
75.30.Sg
73.43.Qt
Opis:
We have investigated magnetic and magnetocaloric properties of $Pr_{0.7}(Ca_{1-x}Sr_{x})_{0.3}CoO_{3},$ when the average size of the interpolated cation was changed. $Pr_{0.7}Ca_{0.3}CoO_{3}$ has an orthorhombic Pnma symmetry and it shows a magnetic cluster-glass behavior below 70 K. When Sr partially replaces Ca in this compound, its magnetic properties are improved, and it begins to have ferromagnetic-like behavior. The magnetic transition temperature, gradually, increases with increasing Sr content, up to 170 K, for x=1. The electrical conduction also improved when Sr content increased. All the samples show negative magnetoresitance. Magnetic entropy change $\Delta S_{M}$ was estimated from isothermal magnetization data. We have found that it had higher values for the samples with x>0.5, around 1 J/kg K for Δ B=4 T, with reasonable good relative cooling power.
Źródło:
Acta Physica Polonica A; 2011, 120, 2; 306-310
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Growth and Investigation of $p-La_{2//3}Ca_{1//3}MnO_3$/n-Si Heterostructures
Autorzy:
Anisimovas, F.
Butkutė, R.
Devenson, J.
Maneikis, A.
Stankevič, V.
Pyragas, V.
Vengalis, B.
Powiązania:
https://bibliotekanauki.pl/articles/1813391.pdf
Data publikacji:
2008-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.30.+h
73.43.Qt
75.47.Lx
81.15.Fg
Opis:
We report the fabrication and investigation of p-n diode structures based on thin hole-doped $La_{2//3}Ca_{1//3}MnO_3$ films grown on n-type silicon substrates. $La_{2//3}Ca_{1//3}MnO_3$ films with typical thickness of about 400 nm were prepared using pulsed laser deposition. Reflection high-energy electron diffraction measurements revealed polycrystalline quality of $La_{2//3}Ca_{1//3}MnO_3$ thin films on Si substrates. The surface roughness of $La_{2//3}Ca_{1//3}MnO_3$ films investigated by atomic force microscopy was found to be in the range of 25÷30 nm. Studies of electrical properties showed that $La_{2//3}Ca_{1//3}MnO_3$/Si heterostructures exhibit nonlinear asymmetric I-V characteristics both at room temperature and at 78 K. Furthemore, it was shown that these I-V dependences are sensitive to magnetic field, especially at lower voltages.
Źródło:
Acta Physica Polonica A; 2008, 113, 3; 997-1000
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Kondo Screening Effect and Ferromagnetic Order in $UCu_2Si_2$
Autorzy:
Troć, R.
Samsel-Czekała, M.
Coqblin, B.
Powiązania:
https://bibliotekanauki.pl/articles/1426710.pdf
Data publikacji:
2012-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.43.Qt
75.30.Mb
75.30.Fv
71.18.+y
Opis:
Electrical resistivity and low temperature magnetoresistivity measurements made on a single crystal of $UCu_2Si_2$ are reported. By using as a phonon reference the temperature dependence of the electrical resistivity of $ThCu_2Si_2$ we could establish that $UCu_2Si_2$ has both a ferromagnetic and a Kondo behaviour. Such a phenomenon can be described by the underscreened Kondo lattice model. The magnetoresistivity revealed the presence of magnetic fluctuations within the ferromagnetic order as it was reported previously for $UGe_2$. Also one of the calculated Fermi surface sheets exhibits nesting properties, being in perfect agreement with the previous neutron diffraction data, supporting the possibility of a presence of the spin density wave phase. In this ternary silicide, where the strong ferromagnetic behaviour exists, this phase is signalised by magnetic fluctuations.
Źródło:
Acta Physica Polonica A; 2012, 121, 5-6; 1023-1025
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 17

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