Autor: Dugaev, V. - Katalog OPAC zbiorów

Skocz do pozycji: 16.

Tytuł:: Charge and Spin Transport in a Metal-Semiconductor Heterostructure with Double Schottky Barriers
Autorzy:: Wolski, S.
Jasiukiewicz, C.
Dugaev, V.
Barnaś, J.
Slobodskyy, T.
Hansen, W.
Powiązania:: https://bibliotekanauki.pl/articles/1386690.pdf
Data publikacji:: 2015-02
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 73.30.+y
73.40.-c
75.76.+j
Opis:: Taking into account the available experimental results, we model the electronic properties and current-voltage characteristics of a ferromagnet-semiconductor junction. The Fe/GaAs interface is considered as a Fe/(i-GaAs)/n⁺-GaAs/n-GaAs multilayer structure with the Schottky barrier. We also calculate numerically the current-voltage characteristics of a double-Schottky-barrier structure Fe/GaAs/Fe, which are in agreement with available experimental data. For this structure, we have estimated the spin current in the GaAs layer, which characterizes spin injection from the ferromagnet to the semiconductor.
Źródło:: Acta Physica Polonica A; 2015, 127, 2; 472-474
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 17.

Tytuł:: Spin-Dependent Phenomena in Magnetoelectronic Devices
Autorzy:: BarnaŚ, J.
Gmitra, M.
Rudziński, W.
Wawrzyniak, M.
Dugaev, V.
Kunert, H.
Powiązania:: https://bibliotekanauki.pl/articles/1814031.pdf
Data publikacji:: 2007-12
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 75.60.Ch
75.70.Cn
75.70.Pa
Opis:: Spin effects in electronic transport properties of artificial magnetic structures, like nanopillar spin valves, tunnel junctions, mesoscopic double-barrier junctions (single-electron transistors) are briefly discussed. Two classes of spin effects are distinguished; i.e. magnetoresistance phenomena due to magnetization rotation, and current-induced magnetic switching and magnetic dynamics.
Źródło:: Acta Physica Polonica A; 2007, 112, 6; 1259-1265
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 18.

Tytuł:: Energy Spectrum in Quantum Dots of Lead and Tin Chalcogenides Semiconducting Compounds
Autorzy:: Dugaev, V. K.
Litvinov, V. I.
Petrov, P. P.
Mironov, O. A.
Nashchekina, O. N.
Oszwałdowski, M.
Powiązania:: https://bibliotekanauki.pl/articles/1923782.pdf
Data publikacji:: 1992-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 71.50.+t
71.90.+q
Opis:: The energy spectrum of a quantum dot made from IV-VI narrow gap semiconductors is studied. The calculations of the energy levels as functions of the dot radius are performed. When the anisotropy of the bare energy spectrum is strong, the energy levels are calculated using Fal'kovskii's adiabatic approximation for multiband systems. When the quantum dot material has an inverted band gap with respect to the host, the low-energy states within the fundamental gap are shown to arise.
Źródło:: Acta Physica Polonica A; 1992, 82, 5; 797-800
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 19.

Tytuł:: A Photoluminescence Study in PbS-EuS Superlattices
Autorzy:: Kowalczyk, L.
Sadowski, J.
Gałązka, R. R.
Stachow-Wójcik, A.
Sipatov, A. Yu.
Volobuev, V. V.
Smirnov, V. A.
Dugaev, V. K.
Powiązania:: https://bibliotekanauki.pl/articles/1991612.pdf
Data publikacji:: 1998-09
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 75.50.Pp
Opis:: Investigations of the photoluminescence of PbS-EuS superlattices deposited on (111)BaF$\text{}_{2}$ substrates are presented. Quantum-size and deformation effects in photoluminescence spectra are observed. The strain-induced gap shift and valence-band offset is determined from experimental results. A strong stimulated photoluminescence with relatively low threshold was observed. It was found that the photocarriers generated in EuS barrier strongly affect the population of PbS subbands.
Źródło:: Acta Physica Polonica A; 1998, 94, 3; 397-400
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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