The paper is focused on creating a thermal model which provides information about
the thermal conditions in the semiconductor devices. Increasing the current density and
pressure on prices make the optimization of thermal systems an important part in the
design process. Simulation analysis has become with development of computer technology
an excellent equipment to achieve it. In creating the model, we take account of material
and geometric parameters of bonded chips. By the simulation we obtain the necessary
information about the components and thermal stresses, these results can be applied
in the device design procedure and technology of production. Resistance to bonded diodes
is determined by chip parameters and bonding parameters such as the number of
bundles, their spacing, and material. Resistance in practice is determined by experimentally
measuring IFSM, a peak permeable, unrepeatable current. Also, in the work we
analysed voltage-current VA characteristics of power diodes such as threshold voltage,
also the closing voltage we tested functionality and we observe changes in the behaviour
of the component and, last but not least, the characteristics of thermal resistance and
thermal impedance that served as elements for the construction of an equivalent model.
In the next part of the paper, in the context of the works, the methods of bindings of PCB
components are currently being extended and used in current technological processes
and we also concentrate on the dimensional parameters of the modules used to create an
equivalent electrical circuit. The presented assembled simplified model respects the chip
size, number of bonding wires, and their layout on the chip. For the concept of nine
bonds, we had two types of placement from a variety of bonds, so we also respected this
factor in the design of the model. As an example, there is a diode module investigated
(SKEE SEMIPACK® 2, 1600V/174A).
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