Gas sensors based on nanostructures of semiconductors ZnO and TiO2

The paper presents a resistance structures with sensor layers based on nanostructures elaborated on the base of TiO2 and ZnO. The structures were tested concerning their sensitivities to the effects of nitrogen dioxide in the atmosphere of synthetic air. The TiO2 and ZnO nanostructures played the role of sensor layers. Investigations have proved that the elaborated resistance structures with TiO2 and ZnO layers are sensitive to the presence of NO2 in the atmosphere of synthetic air. The resistance of the structure amounted to about 20 in the case of ZnO structures and to about 200 in the case of TiO2 structures. The investigations confirmed that resistance structures with ZnO and TiO2, exposed to the effect of nitrogen dioxide in the atmosphere of synthetic air changes their resistances relatively fast. This indicates that such structures might be practically applied in sensors of nitrogen dioxide ensuring a short time of response.