Electron Spin Resonance Study of Thermal Defects in SrLaAlO$\text{}_{4}$ and SrLaGaO$\text{}_{4}$ High-T$\text{}_{c}$ Substrates

The effect of annealing SrLaAlO$\text{}_{4}$ (SLA) and SrLaGaO$\text{}_{4}$ (SLG) crystals in oxidizing and reducing atmospheres in the temperature range of 950°C-1300°C was investigated. Three kinds of anisotropic defects D$\text{}_{1}$, D$\text{}_{2}$, and E at the temperature range of 4-300 K were found. By diagonalization of orthorhombic spin-Hamiltonian parameters: |D|=0.0541(10) cm$\text{}^{-1}$, |E|=0.0108(10) cm$\text{}^{-1}$, g$\text{}_{∥}$=0.883(5), and g$\text{}_{⊥ }$=1.922(5) for D$\text{}_{1}$ defects for SLG and SLA were calculated and they had the same values within the margin of error.