Monte Carlo simulation of dispersive carrier transport in disordered solids in the presence of space charge effects

A Monte Carlo (MC) method of simulation of the multiple-trapping (MT) carrier transport in disordered solids, taking into account the space charge effects, is presented. The main idea is to utilize the ordered binary bees for the storage of sequences of the carrier positions and release times. An exemplary implementation of the MC method in the case of isothermal surface-potential decay is described. Also, modifications of the algorithm for other experimental configurations are indicated. The preliminary simulation results are compared with the approximate solutions of MT transport equations.