Exposition time analysis of AlGaN/GaN HEMT fabrication by electron beam lithography

Electron beam lithography, due to the high design flexibility and high pattering resolution can be used as an exclusive lithography method in device fabrication in R&D reality. To achieve the reasonable time of process exposition, some essential steps and actions must be done. In the article, the main technical and technological dependences, based on AlGaN/GaN HEMT transistor fabrication, will be presented and discussed. As a result of conducted studies, the total time of the most important lithography process expositions will be shown and explained.