Stress-Induced Changes in Closure Domain Structure Dynamics in Bistable Ferromagnetic Microwire

A new experimental method for the study of closure domain structure dynamics in bistable ferromagnetic microwires is proposed. The simple experimental set-up enables detection of the presence of a free domain wall in the wire after application of a well-defined rectangular magnetic field pulse. The changes in closure domain structure dynamics, caused by applied tensile stress, are demonstrated by measurements on $Fe_{77.5}B_{15}Si_{7.5}$ glass-coated microwire. Minimum critical field for the release of a domain wall from the closure domain structure increases with increasing stress, while on the other hand, the minimum time needed for this process rapidly decreases with increasing stress.