Zastosowanie oprogramowania wspomagającego kontrolowanie procesu epitaksji związków półprzewodnikowych w technologii MOCVD

Celem artykułu jest przedstawienie oprogramowania komputerowego obejmującego szereg zadań związanych z epitaksją związków półprzewodnikowych. Wśród zadań tych znalazły miejsce: 1. zarządzanie przepływami prekursorów, 2. wspomaganie wytwarzania struktur ze studnią kwantową, 3. analiza struktur fotonicznych, 4. analiza potencjału elektrycznego w strukturach. Weryfikacja oprogramowania podczas pracy z systemem epitaksji MOCVD wykazała, że stanowi ono pozytywny przykład rozwiązania problemu numerycznego wspomagania procesu epitaksji.

Several areas of semiconductor epitaxy can be efficiently assisted by computer recipes, some of these areas are already covered by well developed software units, other still needs such approach. The presentation of a software package combining most important tasks in one utility and some tests with MOCVD are included in this publication. The studied software overcomes following topics: 1. Flow corrections computing for ternary, quaternary or higher order compounds. 2. Analysis of quantum wells in semiconductor structures. 3. Analysis of Bragg reflectors and other 1- dimensional photonic structures. 4. Electrical potential profiling. 5. Calculators for minor epitaxy-related problems. Evaluation of flow corrections computing was tested on MOCVD with InGaAsP/InP, InGaAsP/GaAs, and other quaternaries and ternaries. Beside first order approximation, the process-flows response was exercised with application of "software-learning" empirical approach. Results indicated these functions as comfortable and efficient. The semiconductor quantum well structure analysis performed on AlGaAs/GaAs, InGaAs/GaAs, InGaAs/InP and other structures enabled to determine quantum well parameters with high accuracy. The algorithm developed for strained quantum wells was capable to resolve both QW thickness and composition in multiple PL test. The 1- dimensional photonic structure study with InGaAs/InP Bragg reflectors allowed to fit experimental data and resolve structure parameters and uniformity, technological problems with resonant cavities epitaxy have manifested as reduced by application of compiled numerical recipes. The next software area - electrical potential profiling - offered possibility to investigate HEMT structures, prepare potential data for semiconductor quantum well analysis or to forecast depletion regions of test structures. With few other numerical units all algorithms compose a solution of the problem of computer support for epitaxy.