Influence of Accumulation Layer on Rcsonant Tunneling in Double-Barrier Structures

The existing theory of the resonant tunneling phenomena in double-barrier structures takes into account the energy quantization in the well confined between the barriers only. In real tunneling structures there is another well, i.e., the accumulation well in the spacer region separating the highly doped region and the double-barrier structure. In the present paper the transmission coefficient for double-barrier structures with an accumulation layer as a function of applied voltage has been derived. The experimentally observed oscillations of the tunneling current can be explained by the obtained quantization of the energy spectrum in the accumulation well.