Defect Levels in Gallium Arsenide after Irradiation with Light Ions

Deep level centers in GaAs implanted with light ions (H$\text{}^{+}$, He$\text{}^{+}$) were studied by means of deep level transient spectroscopy, double correlation deep level transient spectroscopy and capacity voltage carrier profiling directly after the implantation process and after annealing at various temperatures. Five different electron traps with energy positions between 0.13-0.75 eV are detected. From the evaluated defect production and carrier trapping yields and their annealing behavior we conclude that each of these traps efficiently contributes to the trapping of free carriers. The EL2 defect is created in too low concentrations in order to significantly account for the removal of free carriers.