Electrical Properties of SbSI/Sb_2S_3 Single and Double Heterostructures

The $SbSI//Sb_2S_3$ single heterostructures as well as $Sb_2S_3//SbSI//Sb_2S_3$ and $SbSI//Sb_2S_3/SbSI$ double heterostructures have been produced by applying $CO_2$ laser treatment of p-type SbSI single crystals. The current-voltage and transient characteristics of these heterostructures have been measured in temperatures below and above the SbSI single crystal Curie temperature $(T_{c} = 293 K)$. The results have been fitted with appropriate theoretical formulae to determine the following types of the investigated heterojunctions: P-p $SbSI//Sb_2S_3$, p-P-p $Sb_2S_3//SbSI//Sb_2S_3$ and P-p-P $SbSI//Sb_2S_3//SbSI$. Influence of the illumination on electrical properties of $SbSI//Sb_2S_3$ single and double heterostructures has been reported. Fabricated new structures may be potentially applicable in electronics and optoelectronics as a new type of metal-ferroelectric-semiconductor devices.